Shunko Magoshi

Evolving Nano Process Infrastructure Development Center (Japan)

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Kazuo Tawarayama

Toshiba (Japan)

Hajime Aoyama

Nikon (Japan)

Yuusuke Tanaka

Japan Agency for Marine-Earth Science and Technology

Hirohisa Tanaka

Gunma University

Seiichiro Shirai

Renesas Electronics (United States)

Kentaro Matsunaga

Toshiba (Japan)

Satoshi Tanaka

Japan Aerospace Exploration Agency

Atsushi Ando

National Institute of Advanced Industrial Science and Technology

Kazuyoshi Sugihara

Tokyo Electron (Japan)

Yumi Nakajima

Toshiba (Japan)

Cooperative Institutions

Toshiba (Japan)

Evolving Nano Process Infrastructure Development Center (Japan)

Kyoto University

The University of Tokyo

Hokkaido University

Hitachi (Japan)

Toshiba Machine (Japan)

Nagoya University

Tokyo Institute of Technology

Osaka University

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Mask 3D effect reduction and defect printability of etched multilayer EUV mask

Takashi Kamo Takeshi Yamane Yasutaka Morikawa S. Iida Takayuki Uchiyama

We report on the reduction of the mask 3D effect in an etched 40-pair multilayer extreme ultraviolet (EUV) lithography mask by measuring the printed ΔCD (horizontal–vertical) on exposure with a high-NA small field exposure tool (HSFET). We compared these patterns with those of a conventional Ta-based absorber EUV lithography mask. Next, we examined the programmed pattern defect printability of the etched 40-pair multilayer EUV lithography mask and showed that defect printability of the etched multilayer mask was hardly influenced by the direction of EUV illumination. We conclude that the mask 3D effect reduction contributes to simple specifications of the mask pattern defect printability in EUV lithography.

Extreme Ultraviolet Lithography

Extreme ultraviolet

Next-generation lithography

10.1117/12.2515273

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Citations (1)

High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing

Japanese Journal of Applied Physics (1992)

Shunko Magoshi Kiyomi Koyama Osamu Ikenaga Susumu Watanabe Tamaki Saito

A new high-speed electron beam (EB) data conversion system has been developed for the variable-shaped beam EB reticle writing system EX-8. The target conversion rate from computer-aided design (CAD) data to EX-8 data is five reticles per hour for the class of 16-Mbit dynamic random access memory (DRAM) and beyond. To achieve this, both the hierarchical and parallel shape data operations and the parallel EB formatting have been adopted. Preprocesses for the hierarchical operations have been integrated, such as cell-overlap eliminations and the “doughnut process” which involves partially expanding shapes near cell boundaries. A 64-Mb DRAM design was successfully converted in the hierarchical method on an engineering workstation (EWS) with a single processor, and the number of processed shapes was reduced by four orders of magnitude and the average processing time was less than nine minutes. The processing time of the shape data operations for one layer of a 129 k gate array was reduced to 1/3 when four processes were performed in parallel on an EWS with four processors.

Dram

Reticle

Dynamic random-access memory

Parallel processing

Data Processing

10.1143/jjap.31.4257

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Citations (5)

Optimization method of proximity effect correction parameters on photomasks.

応用物理学会学術講演会講演予稿集 (1996)

Masamitsu Ito Shunko Magoshi Nakasugi Tetsuo Kamikubo Takashi Abe Takayuki

Photomask

Source

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Citations (0)

Resolution Enhancement for Beyond-22-nm Node Using Extreme Ultraviolet Exposure Tool

Japanese Journal of Applied Physics (2010)

Kazuo Tawarayama Hajime Aoyama Kentaro Matsunaga Shunko Magoshi Yukiyasu Arisawa

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination (σ=0.8). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.

Extreme Ultraviolet Lithography

Extreme ultraviolet

Numerical aperture

Critical dimension

Ultraviolet

Aperture (computer memory)

10.1143/jjap.49.06gd01

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Citations (2)

Contamination Charging up Effect in a Variably Shaped Electron Beam Writer

Japanese Journal of Applied Physics (1996)

Atsushi Ando H. Sunaoshi Shinji Sato Shunko Magoshi Kiyoshi Hattori

We investigated the beam drift on the second shaping aperture caused by the charging up of contamination layers on shaping deflector surfaces in an EX-8D variably shaped beam (VSB) writer. A surface charging model which is based on the movement of the secondary electron (SE) charge-up area in a deflector in response to the direction and strength of the field was adapted to explain the beam drift phenomenon. It was found that SE charge-up causes the beam drift and its amount depends on the amount of SEs moving between the electrodes. It was also found that by removing the contamination layers using a downflow cleaning process the beam drift is significantly reduced even if SEs move between the electrodes.

Aperture (computer memory)

10.1143/jjap.35.6426

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Citations (4)

Recent progress of EUV full-field exposure tool in Selete

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2009)

Kazuo Tawarayama Hajime Aoyama Shunko Magoshi Yuusuke Tanaka Seiichiro Shirai

The Selete full-field EUV exposure tool, the EUV1, was manufactured by Nikon and is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-&-space (L&S) patterns, Selete Standard Resist 03 (SSR3), an NA of 0.25, and conventional illumination (σ = 0.8). The results showed that 25- nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the CD uniformity across a shot to be 3 nm, also 26-nm L&S patterns were resolved. Overlay performance of the EUV1 was showed as processed wafer mark alignment, the repeatability was under 1nm. Overlay accuracy using EGA (Enhanced Global Alignment) was below 4nm at the 3-sigma after liner correction. These results were good enough for an alpha-level lithography tool and test site verification.

Extreme Ultraviolet Lithography

Extreme ultraviolet

10.1117/12.813627

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Citations (13)

Lithographic Performance of Extreme Ultravolet Full-Field Exposure Tool at Selete

Japanese Journal of Applied Physics (2009)

Kazuo Tawarayama Hajime Aoyama Takashi Kamo Shunko Magoshi Yuusuke Tanaka

The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination (σ= 0.8). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.

Extreme Ultraviolet Lithography

Extreme ultraviolet

Critical dimension

Numerical aperture

Multiple exposure

10.1143/jjap.48.06fa02

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Citations (10)

Evaluation result of Selete's exposure tool: impact of the source performance

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2008)

Kazuo Tawarayama Shunko Magoshi Hajime Aoyama Yuusuke Tanaka Seiichiro Shirai

We have installed a small-field exposure tool (SFET) manufactured by Canon and EUVA with a discharge-producedplasma EUV source that employs Xenon gas. We investigated how the performance of the source affects lithographic performance. Electrode life has relation to the illumination uniformity of the exposure field on wafer surface. Also source power at the wafer surface has relation to the electrode life. Electrode life makes EUV power decreasing and larger illumination uniformity number. We examine the pupilgram test using high sensitivity resist. Actual pupil fill shape was observed and there was non-uniform distribution. Pupil fill shape was changed after exchanging electrode, also resist CD bias between parallel and horizontal line of the field. That was comparable to the simulation result. The source electrode requires periodic replacement, which impacts not only the performance of the source, but also the lithographic performance of the tool, such as the CD of resist patterns.

Extreme Ultraviolet Lithography

10.1117/12.771891

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Citations (6)

Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography

Japanese Journal of Applied Physics (1998)

Tetsuro Nakasugi Shunko Magoshi Kazuyoshi Sugihara Satoshi Saito Naoko Kihara

The charging effect of chemically amplified resists in electron-beam (EB) lithography is described. The results of pattern placement error caused by the charging effect using SiO 2 substrates with various thicknesses revealed that the resist with polyhydroxystyrene (PHS) has the ability to reduce the pattern placement error due to the charging effect as compared to the resist, SAL601. From the measurement of the surface resistance of the resist, it was found that the surface resistance of the resist with PHS decreases from 10 17 Ω to 10 12 Ω after UV exposure, even though no change in surface resistance was observed for SAL601. These results imply the following: (1) the charge-reducing effect of the resist with PHS is related to EB bombardment-induced conductivity of resist and (2) the deposited charge in the resist with PHS dissipates at a rate sufficient to avoid charging problems as a result of a leakage current through the surface of SiO 2 film or electron-beam-induced current (EBIC). In this paper, we report the experimental results and the possible mechanism to explain the charge-reducing effect of the resist with PHS.

Leakage (economics)

Surface charge

10.1143/jjap.37.6756

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Citations (4)

Resolution capability of SFET with slit and dipole illumination

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2011)

Yuusuke Tanaka Kentaro Matsunaga Shunko Magoshi Seiichiro Shirai Kazuo Tawarayama

A high-resolution EUV exposure tool is needed to facilitate the development of EUV resists and masks. Since the EUV small-field exposure tool (SFET) has a high numerical aperture (NA = 0.3), low aberration & flare, and excellent stage stability, it should be able to resolve fine L/S patterns for the half-pitch 22-nm & 16-nm nodes. In this study, we evaluated the resolution capability of the SFET and obtained 22-nm L/S patterns with x-slit illumination and clear modulation of 16-nm L/S patterns with x-dipole illumination. The resolution limit of the SFET seems to be about 15 nm. The main cause of pattern degradation in 16-nm L/S is probably resist blur. To obtain good shapes for this pattern size, the resist blur of less than 3.5 nm (σ) is required. The use of y-slit illumination was found to reduce the linewidth roughness (LWR) of resist patterns. Further reduction of the LWR requires a higher image contrast and a smaller flare. Due to the central obscuration, the image contrast of the SFET is sensitive to the change of pupil fill. The degradation in the collector & DMT should be reduced to ensure stable aerial images. This work was supported in part by NEDO.

Slit

10.1117/12.870332

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Citations (8)