Silicon carbide (SiC) is a promising semiconductor material for electronics and photonics. Ultrafast laser processing of SiC enables three-dimensional nanostructuring, enriching and expanding the functionalities of SiC devices. However, challenges arise in delivering uniform, high-aspect-ratio (length-to-width) nanostructures due to difficulties in confining light energy at the nanoscale while simultaneously regulating intense photo-modifications. In this study, we report the controllable growth of long-distance, high-straightness, and high-parallelism multifilament structures in SiC using ultrafast laser processing. The critical mechanism is the formation of femtosecond multifilaments through the nonlinear effects of clamping equilibrium, which allow highly confined light to propagate without diffraction in parallel channels, further inducing high-aspect-ratio nanostripe-like photomodifications. By employing an elliptical Gaussian beam—rather than a circular one—and optimizing pulse durations to stabilize multifilaments with regular positional distributions, the induced multifilament structures can reach a length of approximately 90 μm with a minimum linewidth of only 28 nm, resulting in an aspect ratio of over 3200:1. Raman tests indicate that the photomodified regions consist of amorphous SiC, amorphous silicon, and amorphous carbon, and photoluminescence tests reveal that silicon vacancy color centers could be induced in areas with lower light power density. Interestingly, across a wide pulse duration range of 130 fs to 1 ps, deep-subwavelength features—photomodified nanodots with diameters of about 30 to 120 nm and a period of approximately 130 nm—are observed within the nanostructures. By leveraging femtosecond multifilaments for diffractionless light confinement, this work proposes an effective method for manufacturing deep-subwavelength, high-aspect-ratio nanostructures in SiC.