C. K. Hyon

National Institute of Advanced Industrial Science and Technology

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Takafumi Kamimura

National Institute of Information and Communications Technology

Masatoshi Maeda

Otsuka (Japan)

Eun Kyu Kim

Hanyang University

Kazuhiko Matsumoto

Osaka University

Atsuhiko Kojima

Mitsubishi Chemical (Japan)

S. W. Hwang

Sungkyunkwan University

Young Ju Park

Chung-Ang University

Doyeol Ahn

University of Seoul

E. K. Kim

Korea Institute of Science and Technology

Kwang Moo Kim

Korea Institute of Science and Technology

Cooperative Institutions

Korea Institute of Science and Technology

Korea University

Seoul National University

Samsung (South Korea)

Hanyang University

University of Seoul

Yonsei University

Osaka University

Kyungpook National University

Japan Science and Technology Agency

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Island size control of carbon nanotube single electron transistor operating at room temperature by AFM electrical manipulation

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2006)

C. K. Hyon Takafumi Kamimura Masatoshi Maeda Kazuhiko Matsumoto

We successfully fabricated single electron transistors (SETs) operating at room temperature with carbon nanotube (CNT) channel having different island sizes. The fabrication of the CNT SETs is performed by electrical manipulation using non-contact mode atomic force microscope (AFM). We carried out cutting or nicking of CNTs by applying negative voltage between a metal-coated AFM tip and CNT. A precise control over the CNT dot size was achieved by changing the nicking distance and CNT SETs with a dot size of 15 and 22 nm were fabricated. By changing the size of the dot we could arbitrarily change the operation characteristics of the device where the period of oscillations increases as the dot size decreases.

10.1117/12.645526

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Semiconductor Nano Structures for Quantum Devices

한국진공학회 학술발표회초록집 (2002)

Eun Kyu Kim C. K. Hyon Young Ju Park

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Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope

Japanese Journal of Applied Physics (1999)

C. K. Hyon S.C. Choi S. W. Hwang Doyeol Ahn E. K. Kim

Nanometer scale mechanical processing of semi-insulating GaAs surface was performed using a cantilever oscillating atomic force microscope. Oscillating probe tips induce bond breaking of the GaAs surface and generate nano-meter size patterns. The size of the pattern is shown to be fully controlled by the amplitude and the frequency of the external modulation voltage to the piezo-scanner.

Nanometre

Oscillation (cell signaling)

10.1143/jjap.38.7257

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Citations (11)

Ballistic Transport of Hole in p type Semiconductive Carbon nanotube

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (2004)

Takafumi Kamimura C. K. Hyon Atsuhiko Kojima Masatoshi Maeda Kaori Matsumoto

Ballistic conduction

10.7567/ssdm.2004.h-4-3

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Evaluations of strains in fused layers using patterned substrates

Materials Science and Engineering B (2000)

Sung Min Hwang Ju Young Lee Se-Ki Park C. K. Hyon Yong Kim

10.1016/s0921-5107(00)00468-2

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Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice

Journal of Applied Physics (2002)

Kwang Moo Kim Young Ju Park Young Min Park C. K. Hyon Eun Kyu Kim

We fabricated InAs self-assembled quantum dots on a strained layer using molecular beam epitaxy. The controllable strained layer consisted of an InAs/GaAs superlattice and a GaAs spacer layer on a GaAs (001) substrate. We formed two-dimensional arrays of quantum dots along the 〈110〉 directions on the partially strain-relaxed layer that is formed using the superlattice system. The increase in the thickness of the partially strain-relaxed layer resulted in stronger alignment of the quantum dots. The aligned quantum dots are applicable to quantum devices, because they confine carriers well, in spite of the existence of dislocation networks. Strongly aligned quantum dots have a lower carrier transition energy because of their larger size and increased relaxation.

Stress relaxation

10.1063/1.1511821

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Coherent transport of hole in p type semiconductive carbon nanotube

Takafumi Kamimura C. K. Hyon Atsuhiko Kojima Masatoshi Maeda Kazuya Matsumoto

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

Ballistic conduction

10.1109/drc.2004.1367824

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Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor

Japanese Journal of Applied Physics (2005)

C. K. Hyon Atsuhiko Kojima Takafumi Kamimura Masatoshi Maeda Kazuhiko Matsumoto

We demonstrate that a non-contact atomic force microscope (AFM) can be used to cut and nick carbon nanotubes (CNTs) by applying negative bias to the metal-coated AFM tip when it is very close to the CNT. The voltage needed to cut the CNT completely varied from -8 to -15 V, while the nicking voltage ranged from -6 to -8 V. This technique was applied to make a nanoscale single CNT device. Unwanted CNTs were cut first to leave only one CNT connecting the electrodes. Finally, tunneling barriers defined by two small nicks were created on the CNT to fabricate a single electron transistor. The final device shows Coulomb oscillation and Coulomb diamond characteristics at room temperature.

Electrostatic force microscope

Coulomb blockade

10.1143/jjap.44.2056

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Dependence of Buffer Layer on the Distribution of InAs Quantum Dots

Japanese Journal of Applied Physics (2001)

Hyojin Kim Young Ju Park Byung Don Min C. K. Hyon Se Ki Park

We have investigated the dependence of the distributions of InAs quantum dots on the thickness of GaAs buffer layers grown on 2°-off (100) GaAs substrates by metalorganic chemical vapor deposition. When the thickness of the GaAs buffer layers was changed from 7 ML to 70 ML, the terrace widths were transformed from 25 nm to 75 nm due to the bunching effects of Ga adatoms. The magnitudes of the size and the density of InAs quantum dots on 2°-off GaAs (100) substrates, whose terrace widths, were changed by the thickness of the GaAs buffer layer, were successfully manipulated. Wire-shaped InAs quantum dots could also be fabricated by controlling the size and the density of the quantum dots.

Buffer (optical fiber)

Deposition

10.1143/jjap.40.2146

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Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles

Japanese Journal of Applied Physics (2003)

Kwang Moo Kim Young Ju Park Cheong Hyun Roh Young Min Park Eun Kyu Kim

InAs/GaAs multistacked quantum dot (QD) layers were grown by using molecular beam epitaxy with various numbers of stacking cycles to investigate the shape and the interband transition in the InAs QDs. The appearance of another photoluminescence (PL) peak on InAs/GaAs QDs with more than six stacking cycles originated from the change of the QDs from an isotropic pyramidal shape to an elongated anisotropic pyramidal shape. Dislocation lines along the [110] direction existing on the InAs/GaAs QDs with more than six stacking cycles were attributed to the existence of excessive strain fields. Scanning transmission electron microscope and atomic force microscope images showed that the QD shape in the [110] direction was elongated without any remarkable change in the volume of the QDs. These results indicate that the shape of the InAs/GaAs QDs was strongly affected by the number of the stacking cycles and that the appearance of another PL peak is related to the change of the QD shape.

10.1143/jjap.42.54

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Citations (30)