T. L. Lin

Rowan University

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Co-Authors

R. W. Fathauer

Jet Propulsion Laboratory

Sarath D. Gunapala

Jet Propulsion Laboratory

P. J. Grunthaner

Jet Propulsion Laboratory

A. Ksendzov

California Institute of Technology

T. George

National Yang Ming Chiao Tung University

David N. Jamieson

University of Melbourne

Eric W. Jones

Simon Fraser University

C. W. Nieh

National Tsing Hua University

Y. C. Kao

Texas Instruments (United States)

J.H. Mazur

Lawrence Berkeley National Laboratory

Cooperative Institutions

Jet Propulsion Laboratory

Space Micro (United States)

University of California, Los Angeles

California Institute of Technology

National Applied Research Laboratories

AT&T (United States)

University of Southern California

Intel (United States)

The University of Texas at Austin

University of California, Berkeley

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Epitaxial CoSi₂/Porous-Si Strained Layer Structres Grown by Mbe

MRS Proceedings (1987)

Y. C. Kao David N. Jamieson G. Bai C. W. Nieh T. L. Lin

Stress relaxation

10.1557/proc-91-473

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Citations (1)

18 Micrometer Cutoff Long-Wavelength In_xGa_(1-x)As/GaAs Quantum-Well Infrared Photodetectors

Sarath D. Gunapala K. M. S. V. Bandara B. F. Levine J.S. Park T. L. Lin

We demonstrate the first longest-wavelength quantum-well infrared photodetector using non lattice-matched In_xGa_(1-x)As/GaAs materials system. The detectivity has been found to be comparable to those achieved with the usual lattice-matched GaAs/Al_xGa_(1-x)As detectors.

Lattice (music)

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Intense photoluminescence from laterally anodized porous Si

Applied Physics Letters (1991)

Keun‐Hwa Jung S. Shih T. Y. Hsieh D. L. Kwong T. L. Lin

We have studied photoluminescence (PL) from porous Si anodized laterally along the length of the Si wafer. Broad PL peaks were observed with peak intensities at ∼640 to 720 nm. Strong PL intensity could be observed from 550 to 860 nm. Room-temperature peak intensities were within an order of magnitude of peak intensities of AlGaAs/GaAs multi-quantum wells taken at 4.2 K, and total intensities were comparable. A blue shift of peak intensities from ∼680 to 620 nm could be observed after thermal anneal at 500 °C in O2 and subsequent HF dip.

Anodizing

Intensity

Blueshift

10.1063/1.105752

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Citations (57)

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

Applied Physics Letters (1988)

C. d’Anterroches H. Nejat Yakupoglu T. L. Lin R. W. Fathauer P. J. Grunthaner

Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 °C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 °C. At 600 °C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.

10.1063/1.99434

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Citations (31)

Nucleation and Growth of CrSi₂ on Si(111)

MRS Proceedings (1988)

R. W. Fathauer P. J. Grunthaner T. L. Lin Kai Chang J.H. Mazur

Misorientation

10.1557/proc-116-453

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Citations (3)

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

Applied Physics Letters (1988)

T. L. Lin R. W. Fathauer F. J. Grunthaner C. d’Anterroches

A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm−2 detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm−2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm−2 and is independent of the pinhole size.

Pinhole (optics)

Stoichiometry

10.1063/1.99289

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Citations (50)

Novel Si1−xGex/Si heterojunction internal photoemission long-wavelength infrared detectors

Applied Physics Letters (1990)

T. L. Lin J. Maserjian

A new approach to the design of a Si-based infrared detector is demonstrated, based on internal photoemission over a Si1−xGex/Si heterojunction barrier. The heterojunction internal photoemission device structure is grown by molecular beam epitaxy (MBE). The detector requires a degenerately doped p+-Si1−xGex layer for strong infrared absorption and photoresponse. Doping concentrations to 1020 cm−3 are achieved using boron from a HBO2 source during MBE growth of the Si1−xGex layers. The photoresponse of this device is tailorable, and most significantly, can be extended into the long-wavelength infrared regime by varying the Ge ratio x in the Si1−xGex layers. Results are obtained with x=0.2, 0.28, 0.3, and 0.4 on patterned Si (100) substrates. Photoresponse at wavelengths ranging from 2 to 10 μm is obtained with quantum efficiencies above ∼1% in these nonoptimized structures.

Quantum Efficiency

Infrared detector

10.1063/1.103454

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Citations (100)

Simulation Study of Field Emission Microtrides with Focusing Structure

Yung‐Chiang Lan Yu-Min Hu T. L. Lin

Source

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FAMILY HARMONY: AN ETIOLOGIC FACTOR IN ALIENATION

Child Development (1972)

Morris J. Paulson T. L. Lin Carl A. Hanssen

Harmony (Music)

10.1111/j.1467-8624.1972.tb01126.x

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Citations (9)

Content Adaptation in Online Streaming: How Streamers Utilize Game Updates to Improve Performance

Journal of Information Systems (2024)

Xu Cheng Shih-Hui Hsiao T. L. Lin

ABSTRACT This study investigates the impact of distributed streams on viewer engagement. Using the difference-in-differences (DiD) method, viewer engagement is analyzed based on whether the stream contains game updates. The research dataset contains 2,063 videos randomly selected from 130 streamers from January to March 2024. This study investigates the relationship between streaming releases and viewer engagement by tracking daily viewer growth and controlling for variables such as streaming account age, number of past followers, and number of existing videos. Research results show that streaming media that reflects game updates can initially increase viewer engagement, a key performance indicator that supports decision making. This study contributes to the management accounting and accounting information system literature by emphasizing the need for management control systems to incorporate viewer engagement metrics. This integration aids in making informed decisions within the streaming industry and highlights the critical role of data analytics in improving performance. Data Availability: Data will be made available on request. JEL Classifications: L82; L86; M31; O33.

10.2308/isys-2024-031

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