Sin-Wook You

Korea National University of Transportation

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Il‐Ho Kim

Korea National University of Transportation

Dong-Kil Shin

Korea National University of Transportation

Soon‐Mok Choi

Korea University of Technology and Education

Won‐Seon Seo

Yonsei University

Soon‐Chul Ur

Korea National University of Transportation

Kwan‐Ho Park

Rural Development Administration

Mi-Jung Kim

University of Illinois Urbana-Champaign

Soon-Chul Ur

Korea National University of Transportation

Sunuk Kim

Sungkyunkwan University

Sun‐Uk Kim

Korea Research Institute of Bioscience and Biotechnology

Cooperative Institutions

Korea National University of Transportation

Korea Institute of Ceramic Engineering and Technology

Samsung (South Korea)

Korea University of Science and Technology

Research Institute of Industrial Science and Technology

Pusan National University

Pennsylvania State University

Yonsei University

Hanyang University

Korea Institute of Science and Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Solid-State Synthesis and Thermoelectric Properties of Al-Doped MnSi_1.75-δ

Japanese Journal of Applied Physics (2013)

Dong-Kil Shin Sin-Wook You Il‐Ho Kim

Al-doped higher manganese silicides (HMS), MnSi 1.75-δ :Al x were synthesized by solid state reaction and hot pressing. Through X-ray diffraction analysis of the synthesized HMS, the optimum conditions for solid state reaction were determined to be 1273 K for 6 h. Phase fractions of HMS with compositional variation (δ) had no significant difference, but the MnSi 1.75 :Al 0.005 specimen had the highest fraction of HMS at approximately 98.36%. All specimens showed p-type conduction at all temperatures examined, and exhibited degenerate semiconductor characteristics, in that the electrical conductivity decreased and the Seebeck coefficient increased with increasing temperature. Al doping shifted the onset temperature of intrinsic conduction to higher temperature. Thermoelectric figure of merit ( ZT ) of HMS increased with increasing temperature, and further improvement was achieved by Al doping. The maximum ZT was obtained as 0.41 at 823 K for MnSi 1.73 :Al 0.005 .

Figure of Merit

Degenerate semiconductor

10.7567/jjap.52.10mb21

Cite

Citations (2)

High-Temperature Stability of Thermoelectric Skutterudite In0.25Co3FeSb12

Journal of Electronic Materials (2012)

Kwan‐Ho Park Sin-Wook You Soon‐Chul Ur Il‐Ho Kim Soon‐Mok Choi

Skutterudite

Thermal Stability

10.1007/s11664-011-1889-1

Cite

Citations (19)

Solid-State Synthesis and Thermoelectric Properties of Al-Doped MnSi₁.₇₅₋δ (Special Issue : Electronic Materials and Nanotechnology for Green Environment)

Japanese journal of applied physics : JJAP (2013)

Dong-Kil Shin Sin-Wook You Il‐Ho Kim

Electronic materials

Source

Cite

Citations (0)

Electronic Transport Properties of Fe-doped CoSb3 Prepared by Encapsulated Induction Melting

Kwan‐Ho Park Sin-Wook You Soon-Chul Ur Il‐Ho Kim

Fe-doped CoSb ₃ skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The positive signs of Seebeck and Hall coefficients for all Fe-doped specimens revealed that Fe atoms successfully acted as p-type dopants by substituting Co atoms. Carrier concentration increased with increasing the Fe doping content and the Fe dopants could affect the electronic structure of CoSb ₃ and generate excess holes. However, carrier mobility decreased with increasing the doping content, which indicates that the hole mean free path was reduced by the impurity scattering. Seebeck coefficient and electrical resistivity were almost independent of carrier concentration between 5.1times10 ¹⁸ and 1.2times10 ²⁰ /cm ³ because the increase in carrier concentration by doping was competitive with the decrease in carrier mobility by the impurity scattering. Seebeck coefficient showed a positive value at all temperatures examined and it increased as the temperature increased. Temperature dependence of electrical resistivity suggested that Co _1-x Fe _x Sb ₃ is a highly degenerate semiconducting material. Thermal conductivity was considerably reduced by Fe doping and the lattice contribution was dominant in the Fe-doped CoSb ₃ skutterudites

10.1109/ict.2006.331308

Cite

Citations (3)

Solid-state synthesis and thermoelectric properties of N-type Mg2Si

AIP conference proceedings (2012)

Sin-Wook You Il‐Ho Kim Soon‐Mok Choi Won‐Seon Seo Sun‐Uk Kim

Group BIII (Al, In)-, BV(Bi, Sb) and BVI(Te, Se)-doped Mg2Si compounds were synthesized by solid-state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. Mg2Si powder was synthesized successfully by solid-state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. It was fully consolidated by hot pressing at 1073 K for 1 h. All doped Mg2Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not changed significantly by doping, which was due to much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group BV(Bi, Sb) elements were much more effective to enhance the thermoelectric properties of n-type Mg2Si than other group elements.

Electron Mobility

Figure of Merit

Hot pressing

10.1063/1.4731530

Cite

Citations (3)

Solid-state synthesis and thermoelectric properties of Cr-doped MnSi1.73

Journal of the Korean Physical Society (2014)

Dong-Kil Shin Sin-Wook You Il‐Ho Kim

Rietveld Refinement

Lattice constant

Degenerate semiconductor

10.3938/jkps.65.1499

Cite

Citations (5)

Thermoelectric properties of Bi-doped Mg2Si1−x Sn x prepared by mechanical alloying

Journal of the Korean Physical Society (2013)

Sin-Wook You Il‐Ho Kim Soon‐Mok Choi Won‐Seon Seo

10.3938/jkps.63.2153

Cite

Citations (6)

Solid-state synthesis and thermoelectric properties of Al-doped MnSi1.73

Journal of the Korean Physical Society (2014)

Dong-Kil Shin Sin-Wook You Il‐Ho Kim

Rietveld Refinement

Degenerate semiconductor

Lattice constant

Dimensionless quantity

10.3938/jkps.64.1412

Cite

Citations (11)

Solid‐State Synthesis and Thermoelectric Properties of Mg_2+xSi_0.7Sn_0.3Sb_m

Journal of Nanomaterials (2013)

Sin-Wook You Il‐Ho Kim Soon‐Mok Choi Won‐Seon Seo

Mg 2+ x Si 0.7 Sn 0.3 Sb m (0 ≤ x ≤ 0.2, m = 0 or 0.01) solid solutions have been successfully prepared by mechanical alloying and hot pressing as a solid‐state synthesis route. All specimens were identified as phases with antifluorite structure and showed n‐type conduction. The electrical conductivity of Mg‐excess solid solutions was enhanced due to increased electron concentrations. The absolute values of the Seebeck coefficient varied substantially with Sb doping and excess Mg, which was attributed to the change in carrier concentration. The onset temperature of bipolar conduction was shifted higher with Sb doping and excess Mg. The lowest thermal conductivity of 1.3 W/mK was obtained for Mg 2 Si 0.7 Sn 0.3 Sb 0.01 . A maximum ZT of 0.64 was achieved at 723 K for Mg 2.2 Si 0.7 Sn 0.3 Sb 0.01 .

10.1155/2013/815925

Cite

Citations (20)

Thermoelectric properties of Mg2Si0.7Ge0.3Bi m prepared using a solid-state reaction

Journal of the Korean Physical Society (2014)

Sin-Wook You Dong-Kil Shin Il‐Ho Kim

Hot pressing

Degenerate semiconductor

10.3938/jkps.65.57

Cite

Citations (4)