We report radio-frequency (RF) MOSFETs with a two-dimensional-electron-gas-like (2DEG-like) channel formed at the $\beta $ -Ga 2 O 3 surface through the low-energy implantation of Si and rapid thermal activation process. The shallowly implanted channel exhibits a strong electron confinement near surface with a high sheet concentration of ${3}.{2}\times {10} ^{{13}}$ cm −3 . With the high scaling of gate length ( ${L}_{\text {G}}{)}$ , the current cut-off frequency ( ${f}_{\text {T}}{)}$ and maximum oscillation frequency ( ${f}_{\text {max}}{)}$ were inversely proportional to ${L}_{\text {G}}$ along with a high electron saturation velocity of ${2}.{7}\times {10} ^{{6}}$ cm/s. The device with a ${L}_{\text {G}}$ of $0.15 ~\mu \text{m}$ demonstrates a high ${f}_{\text {T}}$ of 29 GHz and ${f}_{\text {max}}$ of 35 GHz, whilst preserving the high-voltage operation capability with a drain-to-source breakdown voltage ( $BV_{\text {DS}}{)}$ of 193 V. RF performance was verified by the power amplifying capability with a maximum power gain of 7 dB at 2 GHz for the device with ${L}_{\text {G}}$ of $0.5~\mu \text{m}$ .
<p>XLS file - 85K, Supervised Comparisions of 5 independent groups to identify differentially expressed genes that may be associated with progression of DCIS to IBC</p>
<p>PDF file - 110K, Supplementary figure 4. T cell's undergo apoptosis after co-culture with MDA-MB-231 breast cancer cells following PTEN knockdown To determine the effect of increased PD-L1 cell surface expression on apoptosis, standard annexin V assays were performed. Anti-CD3/CD28-stimulated PBMC were co-cultured with breast cancer cells for 20 hours and then stained with anti-CD4 and anti-CD8 antibodies and resuspended in Annexin binding buffer. Analysis was performed using flow cytometry gating on CD4+ or CD8+ T cells. A representative histogram from one experiment is shown in panel A. The experiment was repeated three times in triplicate and the percent Annexin V positive CD4+ and CD8+ T cells from one experiment is shown in panel B.</p>