E.G. McRae

University of Kentucky

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R.A. Malic

AT&T (United States)

Charles W. Caldwell

SUNY Canton

L. C. Feldman

Rutgers, The State University of New Jersey

R. E. Dietz

Technical University of Munich

H.‐J. Gossmann

Axcelis Technologies (United States)

T.M. Buck

University of Groningen

Xiang-Xin Bi

NeoPhotonics (United States)

P. M. Petroff

University of California, Santa Barbara

D. A. Kapilow

AT&T (United States)

J. M. Landwehr

AT&T (United States)

Cooperative Institutions

AT&T (United States)

Nokia (United States)

Alcatel Lucent (Germany)

National Institute of Standards and Technology

Centre National de la Recherche Scientifique

Massachusetts Institute of Technology

Brookhaven National Laboratory

National Institute of Standards

Harvard University

University of Kentucky

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Lateral compressive stress and reconstruction of semiconductor (111) surfaces

Surface Science Letters (1985)

E.G. McRae

Stacking fault

Surface reconstruction

10.1016/0167-2584(85)90880-1

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Citations (0)

Low-energy electron diffraction system using a position-sensitive detector

Review of Scientific Instruments (1985)

E.G. McRae R.A. Malic D. A. Kapilow

A low-energy electron diffraction (LEED) system using a position-sensitive detector is described. The design requirements for LEED observations are outlined. Most of these requirements are realized in a system incorporating a miniature, movable electron gun and a position-sensitive detector of the resistive anode type, interfaced to a computer. This system has been used to make 128×128 channel digital records of LED patterns. The speed of data acquisition is limited by the detector hardware and is 20 kHz. Records of good quality (0.1° instrumental angular resolving power) can be made by counting 5×105 electrons. Illustrative applications to silicon and tungsten crystal surfaces and prospects for improving the system are described.

Resistive touchscreen

Position (finance)

10.1063/1.1138423

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Citations (50)

Very low energy electron reflection at Cu(001) surfaces

Surface Science (1976)

E.G. McRae Charles W. Caldwell

Reflection

Reflection coefficient

Electron scattering

Crystal (programming language)

10.1016/0039-6028(76)90169-2

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Citations (55)

Absorptive potential in nickel from very low energy electron reflection at Ni(001) surface

Surface Science (1976)

E.G. McRae Charles W. Caldwell

Secondary electrons

Cavity magnetron

Reflection

Secondary emission

10.1016/0039-6028(76)90363-0

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Citations (43)

Segregation of Sn at the Au(110) surface and its effect on the 1 × 2 ↔ 1 × 1 phase transition

Physical review. B, Condensed matter (1987)

E.G. McRae T.M. Buck R.A. Malic G.H. Wheatley

The segregation of Sn to the (110) surface of a nominally pure Au crystal was observed by low-energy electron diffraction, Auger electron spectroscopy, and low-energy ion scattering. Sn coverages up to 0.2 monolayers (ML) were produced by annealing above 675 K. The heat of segregation was found to be 3.8 \ifmmode\pm\else\textpm\fi{} 0.4 kcal/mole. Surface Sn was shown to have a marked effect on the 1 \ifmmode\times\else\texttimes\fi{} 2 \ensuremath{\leftrightarrow} 1 \ifmmode\times\else\texttimes\fi{} 1 phase transition, e.g., Sn coverages of 0.002 and 0.13 ML produced shifts to lower transition temperatures of 15 and 200 K, respectively.

Auger electron spectroscopy

Low-energy electron diffraction

10.1103/physrevb.36.2341

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Citations (30)

A 7 × 7 → 2 × 7 Phase Transition of Au Overlayers on Ni(110) Surface

Berichte der Bunsengesellschaft für physikalische Chemie (1986)

E.G. McRae R. A. Maiic

Abstract When a Ni‐0.8% Au alloy is annealed at temperatures above 400 °C, Au segregates at the Ni(110) surface to form an overlayer providing 1.0 ± 0.05 monolayer coverage [1]. Low energy electron diffraction (LEED) showed that the surface periodicity is 7 × 7 at room temperature and 2 × 7 at temperatures above 340 ± 10°C. The 7 × 7 → 2 × 7 transition was observed with a novel LEED system employing a position‐sensitive detector to make digital records of LEED patterns. The transition was found to be abrupt and to display marked hysteresis. The results have been interpreted as follows on the basis of structural models of the overlayer inferred from LEED and low energy ion scattering observations on the 7 × 7 surface [1]. Most os the Au atoms in the 7 × 7 overlayer form close‐packed zigzag chains along the [110] semi‐channels provided by the Ni(110) surface. Sets of three Au atoms from adjacent semi‐channels combine in hexagonal formations, each of which is capped by an extra Au atom. The mismatch stresses that would result from unlimited extension of this close‐packed Au‐atom arrangement are relieved by interruptions of the zig‐zag sequences to form antiphase boundaries parallel to [001]. The 2 × 7 periodicity results if the zig‐zag sequences are uninterrupted. The 7 × 7 → 2 × 7 transition involves the translation of alternate rows of Au atoms in the [001] and [001] directions by about half the Au‐Au neighbor distance. The geometry is such that the transition could be driven by a small lateral expansion of the Au overlayer relative to the Ni(110) surface.

Overlayer

Zigzag

Low-energy electron diffraction

10.1002/bbpc.19860900322

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Citations (4)

Tunneling Images of Atomic Steps on the Si(111)7×7 Surface

Physical Review Letters (1985)

R. S. Becker J. A. Golovchenko E.G. McRae B. S. Swartzentruber

Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. The 7\ifmmode\times\else\texttimes\fi{}7 reconstruction is observed to persist essentially undistorted right up to the steps. The position of each step coincides with a 7\ifmmode\times\else\texttimes\fi{}7 unit-mesh edge in both the upper and lower terraces adjacent to it. Asymmetry within the 7\ifmmode\times\else\texttimes\fi{}7 unit mesh is observed and correlated with faulting of terraces adjacent to the step. The results are described by an extension of the dimer adatom stacking-fault model of Takayanagi et al.

Surface reconstruction

Stacking fault

10.1103/physrevlett.55.2028

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Citations (184)

Lineshape of the 3p Excitation in the Electron Energy Loss Spectrum of Nickel Metal

Vacuum Ultraviolet Radiation Physics IV (1974)

R. E. Dietz E.G. McRae Y. Yafet Charles W. Caldwell

Source

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Structural analogy between GeSi(111)-5×5 and Si(111)-7×7 surfaces

Surface Science Letters (1984)

E.G. McRae H.‐J. Gossmann L. C. Feldman

Low-energy electron diffraction

Surface structure

10.1016/0167-2584(84)90784-9

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Stacking-fault model for the Si(111)-(7×7) surface

Physical review. B, Condensed matter (1983)

P. A. Bennett L. C. Feldman Young Kuk E.G. McRae J. E. Rowe

We propose a model for the geometric structure of the Si(111)-(7\ifmmode\times\else\texttimes\fi{}7) surface based on a stacking fault in the surface layers. The model quantitatively accounts for existing ion-channeling data. Additional evidence for the stacking fault is given by constant-momentum-transfer averaged low-energy electron-diffraction data. A specific class of superlattice structures is suggested by the occurrence of two nearly equivalent stacking sequences having triangular symmetry.

Stacking fault

Stacking-fault energy

10.1103/physrevb.28.3656

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Citations (79)