V. Pashkov

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Yuriy Poplavko

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

V. I. Molchanov

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

A. Yeremenko

National Polytechnic School

V. Bovtun

Czech Academy of Sciences, Institute of Physics

M. Kempa

Czech Academy of Sciences, Institute of Physics

D. Shmigin

National Technical University "Kharkiv Polytechnic Institute"

Yuriy Prokopenko

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

S. Kamba

Czech Academy of Sciences, Institute of Physics

Yuriy Yakymenko

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Victor Kazmirenko

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Cooperative Institutions

National Polytechnic School

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Electron (Ukraine)

National Technical University "Kharkiv Polytechnic Institute"

National Academy of Sciences of Ukraine

National Research University of Electronic Technology

Russian Academy of Sciences

Czech Academy of Sciences, Institute of Physics

O.Ya. Usikov Institute for Radiophysics and Electronics

Czech Academy of Sciences

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

High-Q dielectric resonator with operated slit (Tunability, Thermal Stability, Film Measurements)

IEEE MTT-S International Microwave Symposium digest (2005)

A. S. Eremenko D. Shmigin V. Pashkov V. I. Molchanov Yuriy Poplavko

Split dielectric resonator (SDR) of H type with a narrow slit located athwart to electric field is presented as: 01δ (1) electro-mechanically tunable DR utilizing fast piezo-actuator; (2) high-Q resonant system with thermal self-stabilization of its resonant frequency using thermal expansion for compensation; (3) measurement device to study dielectric film parameters, including their temperature characteristics. Proposed SDR theoretical analysis based on the combination of partial regions methods and collocations, shows agreement with experimental results

Thermal Stability

Dielectric resonator

10.1109/mwsym.2005.1516857

Cite

Citations (2)

Microwave On-Line Monitoring of Thermoset Curing

Materials Testing (2002)

V. Bovtun Wolfgang Stark Jürgen Kelm V. Pashkov Yuriy Yakimenko

A new kind of Open-ended Coaxial Line Resonator Microwave technique is proposed for on-line cure monitoring of thermoset compounds during compression and injection moulding. The measuring cell simulates industrial moulding conditions of closed volume and simultaneous high temperature and pressure. The method was tested on the thermoset polymers urea, melamine, melaminephenolic and phenolic resins and related to previous investigations by the waveguide technique. The transition from softening to curing is clearly indicated by characteristic changes in dielectric permittivity and loss during isothermal and non-isothermal cure. The new method is well suited for the tasks of industrial on-line cure monitoring.

Thermosetting polymer

10.1515/mt-2002-447-809

Cite

Citations (1)

Contents

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) (2013)

V. Bovtun M. Kempa S. Kamba V. Pashkov V. I. Molchanov

10.1109/elnano.2013.6552104

Cite

Citations (0)

Anisotropic dielectric substrate as thin dielectric resonator

V. Bovtun V. Pashkov M. Kempa V. I. Molchanov S. Kamba

Dielectric resonances of thin anisotropic substrates are analyzed. It is shown that substrate orientation in a cylindrical shielding cavity influences the field distribution, coupling and excitation conditions, resonance frequency and quality factor of its TE 01δ resonance mode. The HE 11δ mode is split in two resonances whose intensities depend on substrate orientation and thickness. The optimal ways of anisotropic substrate parameters characterization are discussed.

Q factor

Cite

Citations (2)

Microwave and terahertz dielectric properties of single-crystalline scandate substrates for ferroic thin film deposition

International Crimean Conference Microwave and Telecommunication Technology (2013)

V. Bovtun V. Pashkov D. Nuzhnyy M. Kempa V. Goian

Single-crystalline (110) DyScO3 and (110) TbScO3 substrates were studied in microwave and THz ranges. Their inplane components of anisotropic dielectric parameters were measured from 10 K to 400 K. TE01d and HE11d resonances of the thin substrates were used for their microwave characterization. The microwave and THz parameters are consistent, show a strong dielectric anisotropy and pronounced temperature dependences. Use of the substrates in microwave applications is discussed.

Deposition

Characterization

Source

Cite

Citations (1)

Frequency tunable microwave dielectric devices

Yuriy Poplavko V. I. Molchanov V. Pashkov Eugene Furman Michael T. Lanagan

Source

Cite

Citations (0)

Anomaly of NdGaO3single crystal dielectric properties in the temperature range 80–300 K

Phase Transitions (1999)

D. Savytskii S. Ubizskii A. Matkovskii A. Suchocki U. Bismayer

Abstract The thermal behaviour of the dielectric properties of NdGaO3 single crystals has been measured from 80 to 300 K. An anomaly near 200 K in the temperature dependence of tan δ, magnetic susceptibility and thermal expansion is observed.

Anomaly (physics)

Atmospheric temperature range

Crystal (programming language)

10.1080/01411599908241340

Cite

Citations (9)

Tunable microstrip filter with piezo-moved ground electrode

European Microwave Conference (2005)

Yuriy Poplavko D. Schmigin V. Pashkov Minki Jeong S. Baik

New principle of microstrip resonators and filters tuning is developed and studied. Realized idea is the operation by the effective dielectric constant (/spl epsiv//sub eff/) of substrate using piezo-control. For that, between substrate and ground electrode a narrow air gap (/spl Delta/) is created, and its size is controlled by the piezoelectric plate. The change in /spl epsiv//sub eff/(/spl Delta/) leads to the variation of filter resonant frequency while quality factor is preserved.

Q factor

10.1109/eumc.2005.1610171

Cite

Citations (13)

The temperature properties of semiconductor resonant structures with electronic control

Electronics and Communications (2013)

Yurii Didenko Vitalii Ivanovych Molchanov V. Pashkov Dmytro Tatarchuk A. S. Franchuk

The p-i-n diodes as multilayer electromagnetic systems are considered. It is shown that in such systems may experience electromagnetic E-type resonance. Using this approach, analytical expressions for the evaluation of the temperature dependence of the parameters of such devices are obtained. The temperature properties of resonant systems on the base of Si and GaAs p-i-n diodes, namely the dependence of resonant frequency and unloaded Q‑factor from temperature at millimeter wavelengths are experimentally studied. The expediency of the use of p-i-n diodes as controlled resonant structures in the UHF range is shown.References 5, figures 3, tables 1.

Atmospheric temperature range

Extremely high frequency

10.20535/2312-1807.2013.18.5.142739

Cite

Citations (3)

Electro-mechanically tunable phase shifter

A. Yeremenko V. Pashkov D. Shmygin V. I. Molchanov Yuriy Poplavko

Novel microwave phase shifters utilizing microstrip line and microstrip filters are proposed. The fabricated phase shifters, which consist of either microstrip line or microstrip filter with either dielectric or metallic control element can be electro-mechanically adjusted in order to obtain up to 90deg phase-shift angle with sufficiently small insertion loss

Phase shift module

Microwave applications

10.1109/crmico.2005.1565017

Cite

Citations (0)