Zhenxin Yu

Sun Yat-sen University

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Wenji Peng

Guizhou University

Weilong She

Sun Yat-sen University

Qingxing Li

Wenzhou Medical University

Xu Huang

South China Normal University

Yuhuan Xu

Guizhou Minzu University

Qinxing Li

He Z. Wang

Sun Yat-sen University

Zhigang Cai

State Key Laboratory of Optoelectronic Materials and Technology

Jianying Zhou

State Key Laboratory of Optoelectronic Materials and Technology

Huanchu Chen

Shandong University

Cooperative Institutions

Sun Yat-sen University

Chinese Academy of Sciences

Institut de Microelectrònica de Barcelona

Chinese University of Hong Kong

Consejo Superior de Investigaciones Científicas

Centro Nacional de Microelectrónica

University of Chinese Academy of Sciences

Hong Kong University of Science and Technology

Peking University

State Key Laboratory of Optoelectronic Materials and Technology

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Spectroscopical analysis of luminescent silicon rich oxide films

Revista Mexicana de Física (2007)

A. Morales–Sánchez Carlos Domı́nguez Jorge Barreto M. Riera M. Aceves

Compositional, structural and optical properties of silicon rich oxide (SRO) films containing different silicon excess were investigated using X ray photoelectron spectroscopy (XPS), Raman spectroscopy, energy filtered transmission electron microscopy (EFTEM) and photoluminescence (PL). The XPS-Si2p peaks fitting showed the presence of Si - Si 4 tetrahedra only for the SRO film with the highest silicon excess. Raman spectroscopy revealed amorphous phase silicon in the SRO films with lowest silicon excess; when it was increased, a sharp peak at around 517 cm -1 appeared, which corresponds to crystalline silicon. Si-nanoclusters were slightly observed by EFTEM in the SRO film with the lowest silicon content. They became more evident when the silicon excess was increased, in agreement to Raman spectra. A strong PL was observed in the SRO films with low silicon excess. However, in SRO films with the highest silicon excess, where the silicon agglomeration is greater, the PL practically disappeared. According to these results, we have analysed the dependence of photoluminescence on the composition and structure of the SRO films.

Nanoclusters

Silicon oxide

Nanocrystalline silicon

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Mutual Quenching of Self-Pumped Phase Conjugation by Incoherent ps Laser Pulses

Chinese Physics Letters (1996)

Weilong She Ying-Yu Chen Zhenxin Yu Wing‐Kee Lee

When two beams of incoherent cw mode-locked ps laser pulses were incident upon opposite faces perpendicular to the a-axis of a Cu-doped KNSBN crystal, no mutually pumped phase conjugation as that generated by continuous waves was observed, however, the stronger laser beam generated its self-pumped phase conjugation which was weakened by the weaker one. When the intensities of the two beams were equal, self-pumped phase conjugation was completely quenched.

Phase conjugation

Crystal (programming language)

10.1088/0256-307x/13/11/012

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Optical phase conjugation in undoped and doped KNSBN

Conference on Lasers and Electro-Optics (1989)

Rong Zhu Wenji Peng Weilong She Qinxing Li Zhenxin Yu

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Ultrashort pulse laser microsurgery on cell

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1995)

He Z. Wang Xu Huang Xiguang Zheng Zhenxin Yu Gao Zhaolan

A laser microbeam system has been set up for microsurgery on cell. The relations of laser wavelength, pulse duration and pulse energy to punching effects and self-healing are studied. The experimental results demonstrate that picosecond pulse laser microbeam offers many advantages in cell microsurgery. The mechanism of punching by picosecond microbeam is high field puncture instead of heat effect, and is irrelevant to cell kinds and colors. The diameter and depth of microsurgery can therefore be easily controlled by adjusting the laser pulse energy. The diameter of the minimum aperture is about 0.1 micrometers , much smaller than the theoretical limit ((lambda) /2) for optical microscope due to self- focusing effect. With ultrashort pulse laser microbeam, we can easily cut off any part of a cell. An example is that eight nuclei in the center of unicellular parasite Pneumocystis Carinii can be destroyed one by one by ultrashort pulse laser microbeam without cell wall injury. The holes can also be punched by ultrashort pulse laser microbeam from cell wall to cell nucleus. In a fraction of a second to several seconds after punching, the hole on cell wall or cell membrane can self-heal. Exogenous DNA can be introduced into the cell before its self- healing.

Microbeam

Pulse duration

Ultrashort pulse laser

Picosecond

10.1117/12.209910

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Picosecond photoluminescence of a-Si:H/a-SiN x :H multilayers

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1992)

Xu Guang Huang He Z. Wang Qingxing Li Zhenxin Yu

The dynamics of the carrier recombination in a-Si:H/a-SiN₃:H multilayers has been investigated with picosecond photoluminescence spectroscopy. The thermalization of photogenerated carriers is a direct hopping process. The decay time cutoff, the mobility edge and the bandtail width vary non-monotonously with a turning point near x=O.85, which is attributed to the changes of the build-in field and the multilayer structure with nitrogen content.

Picosecond

Thermalisation

10.1117/12.59299

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<title>Research on the tunneling of asymmetric double quantum wells with time-resolved photoluminescence</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1993)

Xu Huang Zhigang Cai X. J. Zhang Jianying Zhou Zhenxin Yu

In this communication, the electron tunneling process in GaAs/AlGaAs asymmetric double quantum wells with different barrier thickness and doping pattern were studied by picosecond photoluminescence spectrum technique. Impurity-assisted sequence tunneling and coherent tunneling were excluded. An electron and hole resonant/nonresonant tunneling model were considered to explain the experimental data obtained.

Picosecond

Tunnel effect

10.1117/12.147070

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Studies on the Dynanics of Optical Bistability Swithing in the Internal Fabry-Perot Cavity CdSxSe1-x-Doped Glass Waveguide Device

Nonlinear Optics: Materials, Fundamentals, and Applications (1992)

Wenji Peng Qingxing Li Zhenxin Yu Ning An Xu Mai

Glasses doped with semiconductor microcrystalline CdS x Se 1- x (10 nm – 100 nm in dimension) have recently attracted muuch interest due to their large third-order nonlinearities and fast response times. Jain and Lind have been reported the third-order nonlinear susceptibilities χ (8) of CdS x Se 1- x -doped glasses were measured to be 10 -9 –10 -8 esu in a degenerate four-wave mixing (DFWM) experiment and that the origin of the nonlinearity can be attributed to the generation of a short-live electron-hole plasma (band-filling effect) 1 . The nonlinear response of CdS x Se 1- x -doped glass has been got to be about 3.5 ps 2 . So it has great potential to be used in developing high-speed and low-power nonlinear optical devices. Junji Yumoto 8 observed the optical bistablility made using an external Fabry-Perot (F-P) cavity containing CdS x Se 1- x -doped glasses with bistable-switching time of 25 ps. In this paper we report the observation of optical bistability of an internal F-P cavity structure single-mode waveguide device made of CdS x Se1− x -doped glass.

Optical Bistability

Bistability

Waveguide

10.1364/nlo.1992.we24

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Picosecond photoluminescence of hydrogenated amorphous carbon

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1992)

Xu Huang Zhigang Cai Qingxing Li Zhenxin Yu

An investigation of the time-resolved photoluminescence decay in glow-dischargingly deposited hydrogenated amorphous carbon is presented, the dependence upon substrat temperature, emission energy, and excitation energy has been investigated. Our measurements suggest the exciton recombination rather than the pair process. The photoluminescence decay time decreases with increasing substrat temperature, as result of enhancing nonradiative recombination. Comparisons with hydrogenated amorphous silicon are also made.

Picosecond

Amorphous carbon

Carbon fibers

Amorphous semiconductors

10.1117/12.59298

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Time-Resolved Fluorescence Study of C ₆₀ Solution

Chinese Physics Letters (1994)

Jie Song Feiming Li Shixiong Qian Yufen Li Wenji Peng

Using a picosecond excitation source and a time-resolved streak camera detection system, the time-resolved fluorescence spectra of purified C60 have been recorded from toluene solution at room temperature. A fluorescence peak at about 730 nm was detected and its lifetime was directly determined to be 1.1±0.1 ns. Two fluorescence peaks obtained from the mixture of C60 and C70 at 676 and 696 nm were mainly related to C70 content.

Streak camera

Picosecond

Streak

10.1088/0256-307x/11/3/003

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Citations (9)

Temporal responses of optical phase conjugation in the undoped KNSBN crystal

Conference on Lasers and Electro-Optics (1989)

Wenji Peng Rong Zhu Weilong She Qinxing Li Zhenxin Yu

Recently it was found that photorefractive materials are some of the most sensitive materials for performing optical phase conjugation and digital optical computing1 by using only a few milliwatts of continuous laser power.1 The photorefractive crystal KNSBN [(K0.5Na0.5)0.4(Sr0.61Ba0.39)0.8(Nb6O2],2 compared to BaTiO3,1 has the same or higher optical sensitivity and can be grown more easily to produce doped and undoped crystals of adequate size and optical quality for numerous applications. We report the experimental results on the temporal responses of the optical phase conjugation and the natural decay time of the phase grating of the photorefractive crystal KNSBN. These may play important roles in digital optical computing and optical message storage, respectively.

Crystal (programming language)

Phase conjugation

Optical storage

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