E. Janik

University of Warsaw

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T. Wójtowicz

Institute of Physics

E. Dynowska

Polish Academy of Sciences

J. Kossut

Polish Academy of Sciences

G. Karczewski

Institute of Physics

S. Kret

Polish Academy of Sciences

W. Szuszkiewicz

Polish Academy of Sciences

W. Zaleszczyk

Polish Academy of Sciences

P. Dłużewski

Polish Academy of Sciences

P. Kossacki

University of Warsaw

W. Pacuski

University of Warsaw

Cooperative Institutions

Polish Academy of Sciences

136

Institute of Physics

118

University of Warsaw

Czech Academy of Sciences, Institute of Physics

Centre National de la Recherche Scientifique

Institute of High Pressure Physics

Sorbonne Université

Institute of Electron Technology

Université Paris Cité

Warsaw University of Technology

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Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

Applied Physics Letters (2005)

J. Sadowski E. Janik E. Łusakowska J. Z. Domagała S. Kret

Formation of MnAs quantum dots in a regular ring-like distribution has been found on molecular beam epitaxy grown (GaMn)As(100) surfaces after low-temperature annealing under As capping. The appearance of the dots depends on the thickness and Mn concentration in the (GaMn)As layer. With 5 at. % substitutional Mn the quantum dots showed up for layers thicker than 100 nm. For thinner layers the surfaces of the annealed samples are smooth and well ordered with 1×2 surface reconstruction, just as for as-grown (GaMn)As. The annealed surfaces are Mn rich, and are well suited for continued epitaxial growth.

10.1063/1.2158524

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Citations (18)

Conductivity switching effect in Cd_1–xZn_xTe films

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2006)

Tomasz Wojciechowski E. Janik E. Dynowska K. Fronc G. Karczewski

Abstract We report an experimental study of the conductivity switching effect in mono and polycrystalline layers of Cd 1–x Zn x Te grown by MBE on the Si(001)/Au and n + ‐ GaAs(001) substrates. The current‐voltage (I‐V) characteristics of metal‐semiconductor junctions show that the conductivity of the Cd 1–x Zn x Te structures exhibit two states: high‐ and low‐resistive. Electrical pulses applied to the layers trigger the switching effect between these two states. The coefficient of resistivity switching is of the order of 10 4 while its reproducibility is repetitive about 100 switching cycles. The bistablity of the conductance in Cd 1–x Zn x Te layers supports the hypothesis of the ferroelectricity in this material. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Resistive touchscreen

10.1002/pssc.200564727

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MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions

Acta Physica Polonica A (2012)

Karol Gietka J. Kobak J.-G. Rousset E. Janik T. Słupiński

We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots.Manganese concentration was calibrated using magneto-reectivity measurements and the giant Zeeman eect in (Cd,Mn)Te and (Zn,Mn)Te layers.Successful incorporation of Mn in the CdTe/ZnTe quantum dots was conrmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, pd exchange interaction.

Cadmium telluride photovoltaics

10.12693/aphyspola.122.1056

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Magnons in Cubic MBE-Grown A_1-xMn_xTe Layers (A = Cd, Zn, Mg)

Acta Physica Polonica A (1998)

W. Szuszkiewicz B. Hennion M. Jouanne J. F. Morhange E. Dynowska

One-magnon excitations in MBE-grown A1 ΜnΤe layers (where A = Cd, Zn, Mg and x > 0.7) were investigated by means of the Raman scattering measurements at low temperatures (,^s 20 K).The composition dependence of the anisotropy energy -as extracted from these measurements -is discussed.Further, the elastic neutron scattering measurements were performed in layers of cubic MnTe, which constitute the end point material of the ternary alloys series.Abundance of variously oriented antiferromagnetic domains in MnTe layers as a function of temperature was studied.We confirm occurrence of a pronounced magnetostriction effect.

Magnon

10.12693/aphyspola.94.583

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Zeeman mapping of probability densities in square quantum wells using magnetic probes

Physical review. B, Condensed matter (2000)

G. Prechtl Wolfgang Heiß A. Bonanni W. Jantsch Sebastian Maćkowski

We use a method to probe experimentally the probability density of carriers confined in semiconductor quantum structures. The exciton Zeeman splitting in quantum wells containing a single, ultranarrow magnetic layer is studied depending on the layer position. In particular, a system consisting of a $1/4$ monolayer MnTe embedded at varying positions in nonmagnetic CdTe/CdMgTe quantum wells is investigated. The $\mathrm{sp}\ensuremath{-}d$ exchange interaction results in a drastic increase of the Zeeman splitting, which, because of the strongly localized nature of this interaction, sensitively depends on the position of the MnTe submonolayer in the quantum well. For various interband transitions we show that the dependence of the exciton Zeeman splitting on the position of the magnetic layer directly maps the probability density of free holesin the growth direction.

Position (finance)

10.1103/physrevb.61.15617

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Citations (8)

Anomalous small angle X-ray scattering study of CdTe quantum dots in ZnTe

Journal of Alloys and Compounds (2001)

R. Nietubyć E. Sobczak J.B. Pełka Sebastian Maćkowski E. Janik

Cadmium telluride photovoltaics

Absorption edge

Anomalous scattering

Photon energy

Small-angle X-ray scattering

10.1016/s0925-8388(01)01295-6

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Citations (2)

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Journal of the Korean Physical Society (2008)

T. Wójtowicz E. Janik W. Zaleszczyk J. Sadowski G. Karczewski

Cadmium telluride photovoltaics

10.3938/jkps.53.3055

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Citations (28)

Band structure of MBE-grown and photoemission studies

Thin Solid Films (1995)

B.J. Kowalski E. Guziewicz B.A. Orłowski E. Janik G. Karczewski

Photon energy

Inverse photoemission spectroscopy

Absorption edge

Cadmium telluride photovoltaics

10.1016/0040-6090(95)06633-0

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Citations (6)

Raman scattering studies of MBE-grown ZnTe nanowires

HAL (Le Centre pour la Communication Scientifique Directe) (2008)

W. Szuszkiewicz J. F. Morhange E. Dynowska E. Janik W. Zaleszczyk

We report on the first studies of the optical properties of MBE-grown ZnTe nanowires (NWs). The growth of ZnTe NWs was based on the Au-catalyzed vapour–liquid–solid mechanism and was performed on (001), (011), or (111)B-oriented GaAs substrates. Investigated NWs have a zinc-blende structure, the average diameter of about 30 nm, and typical length between 1 and 2 μm. Their growth axes are oriented along -type directions of the substrate. The structural characterization of the NWs was performed by means of X-ray diffraction, using the synchrotron radiation corresponding to the wavelength of CuKα1 radiation W1 beamline at Hasylab DESY). The macro-Raman spectra of either as-grown NWs on GaAs substrate or of NWs removed from substrate and deposited onto Si were collected at temperatures from 15 K to 295 K using Ar and Kr laser lines. Strong enhancement of ZnTe-related LO-phonon structure was found for an excitation close to the exciton energy. Our studies revealed also the presence of small trigonal Te precipitates, typical of tellurium compounds.

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Energy Band Gaps of Hg_xCd_yMn/Te (x + y + z = 1) Epitaxial Layers

De Gruyter eBooks (1981)

U. Debska Markus Dietl G. Geabecki E. Janik E. Kierzek‐Pecold

10.1515/9783112501245-035

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