Chih-Chia Lin

National Sun Yat-sen University

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Abhinav Kranti

Indian Institute of Technology Indore

Ting-Chung Chang

Chihlee Institute of Technology

Cyuan-You Yu

National Sun Yat-sen University

Jyi-Tsong Lin

National Sun Yat-sen University

Wei‐Han Lee

National Sun Yat-sen University

Jung-Chung Hung

National Chin-Yi University of Technology

Chih-Kai Huang

Institut national de recherche en informatique et en automatique

Lip Huat Saw

Universiti Tunku Abdul Rahman

Tei‐Wei Kuo

Delta Electronics (Taiwan)

G. Pollack

The University of Texas at Dallas

Cooperative Institutions

National Sun Yat-sen University

National Taiwan University

National Taiwan University Hospital

University of California, Los Angeles

National Yang Ming Chiao Tung University

National Tsing Hua University

Academia Sinica

National Cheng Kung University

Texas Instruments (United States)

The Aerospace Corporation

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Optimization of Flow Channel Design with Porous Medium Layers in a Proton Exchange Membrane Electrolyzer Cell

Energies (2023)

Wei‐Hsin Chen Yaun-Sheng Wang Min‐Hsing Chang Liwen Jin Lip Huat Saw

This study aims to optimize the flow channel design for a proton exchange membrane electrolyzer cell (PEMEC) to minimize the pressure drop across the cell. The pattern of parallel flow channels is considered with a dual-porous layer structure sandwiched between the flow channel plate and the catalyst layer. Four geometric factors are considered in the optimization analysis, including the width of the flow channel, the depth of the flow channel, the particle diameter of the large-pore porous layer, and the particle diameter of the small-pore porous layer. Computational fluid dynamics (CFD) is used to simulate the flow field, and based on the results of the CFD simulation, the Taguchi method is employed to analyze the optimal flow channel design. The importance of the factors is further analyzed by the analysis of variance (ANOVA) method. Three inlet velocities are assigned in the Taguchi analysis, which are 0.01, 0.1332, and 0.532 m/s, and then an orthogonal array is constructed and analyzed for each inlet flow condition. It is found that the optimal combination of the factors is the depth of the flow channel 1 mm, the width of the flow channel 3 mm, the particle diameter of the large-pore porous layer 0.212 mm, and the particle diameter of the small-pore porous layer 0.002 mm. The pressure drop across the PEMEC is minimized at the condition with the optimal combination of the factors. The ANOVA analysis shows that the depth of the flow channel exhibits the most significant impact on the pressure drop, while the other factors play minor roles only.

10.3390/en16155642

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Investigations on the material property changes of ultrasonic-vibration assisted aluminum alloy upsetting

Materials & Design (1980-2015) (2012)

Jung-Chung Hung Chih-Chia Lin

10.1016/j.matdes.2012.07.021

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Citations (96)

A vertical and junctionless channel with T-shaped gate 1T-DRAM using new operate mechanism

Cyuan-You Yu Jyi Tsong Lin Ting-Chung Chang Chih-Chia Lin Chih-Kai Haung

A vertical junctionless channel with T-shaped gate (VJCT) structure has been proposed as 1T DRAM. Designing in vertical channel topology can overcome scalability issues and reduce the area occupied. Also, the junctionless architecture of the channel can be easily fabricated. The T-shaped gate enhances the gate controllability over the channel and improves performance. Therefore, the proposed structure can enhance programming window and retention time. In addition, we use a new operating mechanism to achieve high writing speed and low power consumption for the device.

Dram

10.1109/icsict.2016.7999063

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<title>One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1994)

I.A. Groves George Brown G. Pollack K. Green Larry C. Dawson

Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO₂ gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

Micrometer

Radiation hardening

10.1117/12.178494

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Citations (4)

Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM

Chih-Chia Lin Jyi-Tsong Lin Wei‐Han Lee Chih-Kai Huang Ting-Chung Chang

It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 μA/um) at shorter gate lengths. The retention time can be improved by using a raised P-body which is beneficial in achieving a retention time of 341 ms.

Dram

10.1109/icsict.2016.7999064

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Skeletal kinetic mechanism for predicting formation of non-fuel hydrocarbons and soot in ethylene flames – A CFD approach

Fuel Processing Technology (2023)

Anurag Dahiya Hairong Tao Chih-Chia Lin Kuang C. Lin

Laminar flame speed

10.1016/j.fuproc.2023.107847

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Citations (5)

Vertical Channel Capacitor-less One-Transistor DRAMs with a pass-way Trench for improving Retention Time

Ting-Pi Hsu Jyi-Tsong Lin Chih-Kai Huang Chih-Chia Lin Abhinav Kranti

In this paper, we propose a capacitor-less 1T-DRAM structure with the pass-way trench for improving the Retention Time (RT). We have improved the device fabrication process to form the pass-way trench of the structure which combines the Vertical Channel and the Gate-All-Around structure (PTVCT). The memory operation and its attractive performance in terms of programming window, retention time, and writing time are investigated. The pass-way trench improves programming window and retention time of the structure in comparison to conventional structure.

Dram

Data retention

Retention time

10.1109/icsict.2016.7999065

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Fabrication of micro-flow channels for metallic bipolar plates by a high-pressure hydroforming apparatus

Journal of Power Sources (2012)

Jung-Chung Hung Chih-Chia Lin

Hydroforming

Overall pressure ratio

Aspect ratio (aeronautics)

Hydrostatic pressure

Expansion ratio

Hydrostatic test

10.1016/j.jpowsour.2012.01.112

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Citations (75)

Effect of Long-Term Detraining on Serum Resistin and Insulin Sensitivity in Athletes

Medicine & Science in Sports & Exercise (2008)

Chih-Chia Lin Yiping Wang Shou-Hua Chen Tung-Shiung Hsu John L. Ivy

PURPOSE: Resistin is produced by adipose tissue in rats, and is a negative regulator of the whole-body insulin action in glucose disposal. In humans, resistin is produced mainly from macrophages and thus might involve with the interplay between inflammation and metabolic syndromes. The purpose of this study was to determine the effect of detraining on resistin level, body composition, and insulin sensitivity for elite swimmers. METHODS: Intensive swimming training program was stopped for 6 months in 20 elite swimmers. Oral glucose tolerance test (OGTT), insulin response of OGTT, resistin, total cholesterol, LDL-C, LDL-C to HDL-C ratio, and triglyceride levels were measured at baseline (training) and after detraining. Body composition measures including BMI and waist circumference were also determined. RESULTS: Waist circumference (72.69±1.11 vs.76.12±1.59 cm, p<0.05) and area under curve of insulin were significantly elevated with detraining. Blood resistin level was significantly decreased (2.27±0.25 vs. 1.23±0.13 mg/dL, p<0.05). CONCLUSIONS: Long-term detraining significantly increased body fatness in the elite swimmers. However, the serum resistin level was significantly reduced with detraining, suggesting that resistin in humans is not playing the same role in insulin action as in rats.

Resistin

10.1249/01.mss.0000322938.74451.d7

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Citations (1)

Spinal Cord Infarction Caused by Cardiac Tamponade

American Journal of Physical Medicine & Rehabilitation (2002)

Chih-Chia Lin Ssu‐Yuan Chen Ching Lan Tiffany Ting‐Fang Shih Ming-Chuan Lin

Lin CC, Chen SY, Lan C, Shih TTF, Lin MC, Lai JS: Spinal cord infarction caused by cardiac tamponade. Am J Phys Med Rehabil 2002;81:68–71. This article describes a 16-yr-old male patient who went into shock and cardiac arrest 2 wk after surgical repair of an atrial septal defect. Cardiac tamponade was diagnosed and promptly treated, and his hemodynamic status stabilized 4 hr after the initial presentation of shock; however, paraplegia was found when the patient regained consciousness. Physicians should be alert to a possible diagnosis of spinal cord infarction in patients with complications of cardiovascular surgery, particularly when a new onset of neurologic symptoms or signs occurs.

Paraplegia

10.1097/00002060-200201000-00013

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Citations (11)