D. B. Beach

General Electric (United States)

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M. Paranthaman

Oak Ridge National Laboratory

A. Goyal

University at Buffalo, State University of New York

D. K. Christen

Oak Ridge National Laboratory

E. D. Specht

Oak Ridge National Laboratory

S. M. Gates

The University of Texas Southwestern Medical Center

P.M. Martin

Université de Bordeaux

William L. Jolly

University of California, Berkeley

D. M. Kroeger

Oak Ridge National Laboratory

R. M. Feenstra

Carnegie Mellon University

T. Chirayil

Knoxville College

Cooperative Institutions

Oak Ridge National Laboratory

IBM Research - Thomas J. Watson Research Center

IBM (United States)

University of Tennessee at Knoxville

Lawrence Berkeley National Laboratory

University of California, Berkeley

Chinese Academy of Sciences

Knoxville College

American Superconductor (United States)

Massachusetts Institute of Technology

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Metal-organic Chemical Vapor Deposition of Electronic Ceramics

Seshu B. Desu D. B. Beach Süleyman A. Gökoğlu B. W. Wessels

Deposition

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Citations (34)

ChemInform Abstract: PHOTOELECTRON SPECTROSCOPIC STUDY OF THE BONDING IN TETRACARBONYL(ETHYLENE)IRON

Chemischer Informationsdienst (1983)

D. B. Beach William L. Jolly

10.1002/chin.198343046

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Citations (0)

Arc Flash Mitigation Through Use Of Voltage Controlled/Voltage Restrained Overcurrent Elements

D. B. Beach Gerald Johnson

This paper explores voltage controlled overcurrent and voltage controlled ground overcurrent elements which provides a means of allowing pickup currents to be set much lower than in conventional time coordinated overcurrent without loss of coordination. These systems will have circuit breaker based switchgear, overcurrent relaying at each breaker and may have other protection, although most are limited to overcurrent protection. Compared to a system using only inverse time overcurrent, use of voltage controlled overcurrent elements reduces the PPE (personal protective equipment) requirements around the switchgear in the system modeled

Overcurrent

Switchgear

10.1109/cpre.2007.359901

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Citations (2)

ChemInform Abstract: Absolute Rate Constants for Silylene Reactions with Hydrocarbons at 298 K.

ChemInform (1988)

J. O. Chu D. B. Beach Joseph M. Jasinski

Watson

IBM

Silylene

10.1002/chin.198801133

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Assessment of Chemical Solution Synthesis and Properties of Gd₂Zr₂O₇ Thin Films as Buffer Layers for Second-Generation High-Temperature Superconductor Wires

Journal of materials research/Pratt's guide to venture capital sources (2005)

Tolga Aytuğ M. Paranthaman Keith J. Leonard H. Y. Zhai M.S. Bhuiyan

Texture (cosmology)

Pulsed Laser Deposition

10.1557/jmr.2005.0365

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Citations (23)

Diffusion effects and nucleation of thin film boron nitride growth from borazine on the Si(100) surface

Journal of Applied Physics (1992)

S. M. Gates Chi-Tung Chiang D. B. Beach

Time-of-flight (TOF) direct recoiling (DR) studies of borazine (B3N3H6) decomposition on the Si(100) surface between 100 and 850 °C are reported. The DR method with a grazing incidence angle directly detects the diffusion of light adsorbate elements into sites below the first Si layer, and this migration process is examined here as a function of temperature (T). Submonolayer coverages of coadsorbed B and N atoms (from B3N3H6) occupy subsurface sites after annealing above 550 °C. The B + N results are compared with the well-studied N atom (from NH3) case and limited data for boron from B10H14. The atomic composition of the initial growth surface during thermal chemical vapor deposition (CVD) of boron nitride (BN) from B3N3H6 is surveyed in situ as a function of T using DR in a B3N3H6 flux of 4×1016 molecules cm−2 s−1. Desorption of surface hydrogen plays a central role in controlling both the submonolayer diffusion effects and thermal CVD growth of BN.

Borazine

Surface diffusion

Thermal desorption

10.1063/1.352169

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Citations (7)

Potential Si atomic layer epitaxy processes using halogenated Si precursors

Thin Solid Films (1993)

Daniel Koleske S. M. Gates D. B. Beach

Atomic layer epitaxy

10.1016/0040-6090(93)90150-n

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