Birk Heinze

Chemnitz University of Technology

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Josef Lutz

Chemnitz University of Technology

Roman Baburske

Infineon Technologies (Germany)

F.‐J. Niedernostheide

Infineon Technologies (Germany)

Martin Domeij

Kista Photonics Research Center

Hans‐Joachim Schulze

Infineon Technologies (Germany)

Hyung‐Seok Lee

Electronics and Telecommunications Research Institute

Carl‐Mikael Zetterling

KTH Royal Institute of Technology

Thomas Feyer

Brandenburg University of Technology Cottbus-Senftenberg

D. Silber

University of Bremen

Matthias Neumeister

Siemens (Germany)

Cooperative Institutions

Infineon Technologies (Germany)

Infineon Technologies (Canada)

Chemnitz University of Technology

Infineon Technologies (Austria)

KTH Royal Institute of Technology

Kista Photonics Research Center

Schott (Germany)

Siemens (Austria)

Friedrich-Alexander-Universität Erlangen-Nürnberg

Fraunhofer Institute for Integrated Systems and Device Technology

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Entwurf von Informationsdiensten für das Web: Modellierung von Benutzerszenarien auf Grundlage des multidimensionalen Datenmodells.

Grundlagen von Datenbanken (1999)

Birk Heinze Thomas Feyer

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Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes

Birk Heinze Josef Lutz Matthias Neumeister Roland Rupp Matthias Holz

In the paper the surge current capability of different power diodes made of silicon carbide (SiC) providing Schottky- and merged-pin-Schottky (MPS) structures are investigated. The diodes were impinged with surge current pulses of different shape and time. Depending on the diodes and there structures, they provide a different responsiveness. In some cases apart from the diode design it's time constant and the case influences the destruction limit of the surge current capability. There exist different destruction mechanisms. The destruction mechanism of MPS diodes of one diode type was the temperature limitation of the metallization melting point. While the surge current pulse the SiC diodes reaches astonishingly high temperatures at the epitaxy layer and the metallization. The diodes of a second diode type show destructive hot spots.

PIN diode

Metal–semiconductor junction

Wide-bandgap semiconductor

10.1109/ispsd.2008.4538944

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On the formation of stationary destructive cathode-side filaments in p<inf>+</inf>-n<inf>−</inf>-n<sup>+</sup> diodes

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs (2009)

Roman Baburske Birk Heinze F.‐J. Niedernostheide Josef Lutz D. Silber

Analyzing the dynamics of current filaments is essential for a correct understanding of SOA limitations. Current filaments can occur during the reverse-recovery period of p ⁺ -n ^- -n ⁺ diodes. In this work, we apply the results from an analysis of the plasma-front dynamics for the one-dimensional case to conditions under which current filaments appear in the depletion layers due to dynamic avalanche. We show that the anode-side plasma front velocity is higher in the vicinity of the filament than far away from the filament center, favoring the evolution of a lateral traveling anode-side filament. Furthermore, we find that the cathode-side plasma front changes its vertical propagation direction when a dynamic avalanche in the cathode-side depletion layer causes current crowding. As a result, the cathode-side depletion layer in the vicinity of the filament decreases, favoring the formation of a standing cathode-side filament that may cause final destruction of the device. The analytical results are in good agreement with numerical simulations and results of previously published work.

10.1109/ispsd.2009.5157996

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Effects of negative differential resistance in high power devices and some relations to DMOS structures

Roman Baburske Josef Lutz Birk Heinze

Due to the feedback of free carriers to the electric field, branches with negative differential resistance (NDR) occur in high power devices. NDR usually leads to current filaments. These current filaments might be non-destructive if they move. Most critical effects are found if impact ionization occurs at the n ^- -n ⁺ -junction with a positive electrical feedback to avalanche or dynamic avalanche at the pn-junction. Against dangerous double-sided dynamic avalanche, countermeasures have been found in high power devices. These structures suppress or limit the formation of electric fields at the n ^- -n ⁺ -junction. They lead to devices with dramatically increased ruggedness. Even if ESD and DMOS devices operate at lower voltage, the very high current density levels lead to a density of free carriers above the specific doping of the layer, and free carriers dominate the shape of the electric field. Similar effects of negative differential resistance and moving filaments have been found in ESD protection devices. Snap-back effects have been found in DMOS devices. Possible relations are discussed.

Impact ionization

10.1109/irps.2010.5488835

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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ -$\hbox{n}^{+}$ Diodes

IEEE Transactions on Electron Devices (2008)

Roman Baburske Birk Heinze Josef Lutz F.‐J. Niedernostheide

This brief describes the influence of switching conditions and a dynamic avalanche on the extraction of the charge-carrier plasma during the reverse-recovery period of p ⁺ -n ^- -n ⁺ diodes. The influence of the drift components and the diffusion components of the electron- and hole-current densities on the evolution of the plasma layer was investigated. The analysis shows that diffusion currents influence the plasma extraction process and can induce a change in the direction of the particle flux. Such a change in the particle flux may result in a longitudinal displacement of the plasma layer and significantly modify the reverse-recovery behavior. The results explain how a low on -state current density, a high circuit inductance, and the appearance of a dynamic avalanche will modify the reverse-recovery behavior.

10.1109/ted.2008.926748

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Influence of the base contact on the electrical characteristics of SiC BJTs

Hyung‐Seok Lee Martin Domeij Carl‐Mikael Zetterling Mikael Östling Birk Heinze

In this paper, we have investigated how the specific on-resistance and common emitter current gain of SiC BJTs depend on the base contact resistance. The on-state characteristics of SiC BJTs were investigated before and after base contact annealing at different temperatures. The common emitter current gain and specific on-resistance was improved by 23% and 300% compared to the values of before base contact annealing, respectively. Large area SiC BJTs (active area 0.0324 cm ² ), have been measured up to 34 A collector current in pulsed mode showing a gain of 35, and a specific on-resistance of 8.79 mΩ·cm ² .

Contact resistance

Base (topology)

10.1109/ispsd.2007.4294955

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The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

IEEE Transactions on Electron Devices (2009)

Josef Lutz Roman Baburske Min Chen Birk Heinze Martin Domeij

The effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field. A density of free carriers higher than the background doping will easily occur in space-charge regions during reverse recovery of high-voltage silicon devices. As a result, a high electric-field strength combined with avalanche generation occurs at the p-n junction. However, if a second region with high electric-field strength arises at the nn ⁺ -junction, the situation can become critical. If the second electric-field peak can be suppressed, it is possible to make diodes that are very rugged and show a significantly improved soft-recovery behavior.

10.1109/ted.2009.2031019

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Citations (52)