Masashige Ishizaka

Photonics Electronics Technology Research Association

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Co-Authors

Yutaka Urino

Photonics Electronics Technology Research Association

Yasuhiko Arakawa

The University of Tokyo

Takahiro Nakamura

Photonics Electronics Technology Research Association

Nobuaki Hatori

Photonics Electronics Technology Research Association

Tsuyoshi Yamamoto

University of Tsukuba

Takanori Shimizu

Photonics Electronics Technology Research Association

Makoto Okano

National Institute of Advanced Industrial Science and Technology

M. Mori

National Institute of Advanced Industrial Science and Technology

Junichi Fujikata

Photonics Electronics Technology Research Association

Tatsuya Usuki

Photonics Electronics Technology Research Association

Cooperative Institutions

NEC (Japan)

Photonics Electronics Technology Research Association

Photonic Systems (United States)

National Institute of Advanced Industrial Science and Technology

The University of Tokyo

RIKEN Center for Advanced Photonics

Tohoku University

Hitachi (Japan)

Osaka University

NTT (Japan)

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Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer

IEICE Transactions on Electronics (1998)

Masashige Ishizaka T. Sasaki Masahiro Yamaguchi Koji Kudo Hiroyuki Yamazaki

Laser diode

Source

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Citations (0)

Multichannel and high-density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for interchip optical interconnection

Photonics Research (2014)

Takanori Shimizu Nobuaki Hatori Makoto Okano Masashige Ishizaka Yutaka Urino

A hybrid integrated light source was developed with a configuration in which a laser diode (LD) array was mounted on a silicon optical waveguide platform for interchip optical interconnection. This integrated light source is composed of 13-channel stripes with a pitch of 20 or 30 μm. The output power of each LD in the 400 or 600-μm long LD array was over 40 mW at room temperature without cooling. An output power uniformity was 1.3 dB including an LD array power uniformity. The use of a SiON waveguide with a spot size converter resulted in an optical coupling loss of 1 dB between an LD and SiON waveguide. The integrated light source including 52 output ports demonstrated a reduction in the footprint per channel. We also demonstrated a light source with over 100 output ports in which the number of output ports is increased by using a waveguide splitter and multichip bonding. These integrated light sources are practical candidates for use with photonic integrated circuits for high-density optical interconnection.

Optical interconnect

Waveguide

Laser diode

10.1364/prj.2.000a19

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Citations (35)

Demonstration of 25-Gbps optical data links on silicon optical interposer using FPGA transceiver

Daisuke Okamoto Yutaka Urino T. Akagawa Suguru Akiyama Takeshi Baba

We demonstrated a 25-Gbps error-free data link on a silicon optical interposer. The experimental results verified that our interposer is compatible with high-performance FPGAs, and transmitter pre-emphasis and receiver equalization reduced bit error rate of the optical data link.

Transceiver

Interposer

Optical link

10.1109/ecoc.2014.6963975

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Citations (5)

1560- to 1610-μm wavelength EA-modulator integrated DFB-LDs for extended-band 2.5-Gb/s/ch and 10-Gb/s/ch WDM systems

Y. Furushima Koji Kudo Y. Muroya Y Sakata Y. Inomoto

We developed EA-modulator integrated DFB-LDs covering 1.56-/spl mu/m to 1.61-/spl mu/m wavelengths on a single wafer, and tested them in long-distance transmission experiments for the first time to our knowledge. Transmissions at 2.5 Gbit/s over 600 km and 10 Gbit/s over 500-ps/nm dispersion were successfully demonstrated.

Gigabit

Modulation (music)

10.1109/ofc.1999.766358

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High-density and wide-bandwidth optical interconnects with silicon optical interposers [Invited]

Photonics Research (2014)

Yutaka Urino Tatsuya Usuki Junichi Fujikata Masashige Ishizaka Koji Yamada

One of the most serious challenges facing exponential performance growth in the information industry is the bandwidth bottleneck in interchip interconnects. We propose a photonics–electronics convergence system in response to this issue. To demonstrate the feasibility of the system, we fabricated a silicon optical interposer integrated with arrayed laser diodes, spot-size converters, optical splitters, optical modulators, photodetectors, and optical waveguides on a single silicon substrate. Using this system, 20 Gbps error-free data links and a 30 Tbps/cm2 bandwidth density were achieved. This bandwidth density is sufficient to meet the interchip interconnect requirements for the late 2010s.

Integrated Optics

10.1364/prj.2.0000a1

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Citations (42)

C and L Bands Wavelength Tunable Laser with Silicon Photonic-wire Waveguide Micro-ring Resonators

Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching (2010)

Tao Chu Nobuhide Fujioka Masatoshi Tokushima Shigeru Nakamura Masashige Ishizaka

Using photonic-wire-waveguide-based silicon micro-ring resonators, we demonstrate the first C and L bands wavelength tunable laser module. The laser hybrid integrated on SOI substrate is compact and lower power consumption.

Waveguide

Optical ring resonators

Hybrid silicon laser

10.1364/iprsn.2010.ime1

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Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C

Electronics Letters (2014)

Yutaka Urino Nobuaki Hatori T. Akagawa Takanori Shimizu Makoto Okano

Interposers for inter‐chip interconnects should perform stably under high‐temperature conditions and rapid temperature change due to the heat generated by mounted large‐scale integration (LSI) chips. Athermal silicon optical interposers integrated with quantum dot lasers and other temperature‐insensitive components on a single silicon substrate are demonstrated, and error‐free data links at 12.5 Gbit/s operating from 25 to 125°C are achieved without any bias adjustment. Since maximum junction temperatures in most LSIs have been below 125°C now and will be in the future, the interposers are tolerant of heat generated by LSIs, and are suitable for inter‐chip interconnects.

Interposer

10.1049/el.2014.2135

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Citations (3)

Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics

Masashige Ishizaka T. Iizuka S. Ohi M. Fukuma H. Mikoshiba

A novel mobility model for electrons in the Si-MOS inversion layer is proposed on the basis of two-dimensional degenerate electron gas physics. The mobility is found to be affected by Pauli's exclusion principle and the Fermi-Dirac distribution function. The universal relation between mobility and effective field strength in the normal direction can be consistently explained by the model, including its temperature dependence.< >

Pauli exclusion principle

Electron Mobility

Fermi–Dirac statistics

10.1109/iedm.1990.237049

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Citations (13)

Demonstration of over 1000-channel hybrid integrated light source for ultra-high bandwidth interchip optical interconnection

Takanori Shimizu Makoto Okano Hiroyuki Takahashi Nobuaki Hatori Masashige Ishizaka

An over 1000-channel hybrid integrated light source has been demonstrated by novel spot-size converters with a SiOx slab layer and by optimization considering thermal interference of multiple LD arrays for low power consumption.

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Demonstration of over 1000-Channel Hybrid Integrated Light Source for Ultra-High Bandwidth Interchip Optical Interconnection

Optical Fiber Communication Conference (2014)

Takanori Shimizu Makoto Okano Hiroyuki Takahashi Nobuaki Hatori Masashige Ishizaka

Slab

10.1364/ofc.2014.th1c.6

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Citations (7)