B. Vidal

Centre National de la Recherche Scientifique

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A. Erko

Institut für angewandte Photonik

P. Dhez

ADIR Association

P. Vincent

University of Neuchâtel

E. Pelletier

Université Laval

Zuimin Jiang

Fudan University

Andrey Yakshin

University of Twente

J. Marfaing

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

M. Piécuch

Military Institute of Armament Technology

Annick Darry-Henaut

École Nationale Supérieure de Chimie de Lille

H. Rakoto

Laboratoire National des Champs Magnétiques Intenses

Cooperative Institutions

Centre National de la Recherche Scientifique

Denver Federal Center

United States Geological Survey

Texas Health Resources Foundation

Texas Water Development Board

Université Paris-Sud

Université Paris Cité

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Aix-Marseille Université

Laboratoire de Chimie Physique

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High field magnetoresistance of sputtered W/C multilayers

Physica B Condensed Matter (1992)

Jean-Marc Broto A. Sdaq A. Auodouard J.C. Ousset H. Rakoto

10.1016/0921-4526(92)90141-e

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Citations (2)

The measurement of the properties of optical thin films during deposition

Thin Solid Films (1979)

B. Vidal A. Fornier E. Pelletier

Deposition

10.1016/0040-6090(79)90430-9

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Citations (0)

Granulométrie instantanée d'un condensat métallique discontinu déduite de mesures de sa conductance et de son épaisseur

Thin Solid Films (1991)

B. Vidal G. Desrousseaux A. Carlan

10.1016/0040-6090(91)90272-y

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A comparative study of the interfacial roughness correlation and propagation in Mo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule and zerodur substrates

Journal of Physics Condensed Matter (2002)

Magali Putero H Fa k B. Vidal

Mo/Si multilayer (ML) mirrors play a decisive role in an extreme-ultraviolet (EUV) lithography process. In this study, the surface and interfacial roughness, as well as the lateral and vertical correlation lengths, of a series of Mo/Si MLs deposited by RF-magnetron sputtering (RF-MS) have been characterized using diffuse x-ray scattering and atomic force microscopy. We have investigated the influence of the substrate quality and material (silicon, ule and zerodur) on the propagation and the value of ML roughness. We show that, whatever the substrate is, the film deposited by RF-MS presents a reduced roughness compared with that of the substrate. Moreover, rocking-curve analyses show that, for Si and ule substrates, the ML average roughness is very low (< 1.5 Å), associated with high spatial frequency oscillations, while in the case of zerodur substrates, the roughness is significantly increased (> 2 Å), and the high spatial frequency oscillations are reduced. Finally, the combination of specular and non-specular small-angle x-ray results allows us to evaluate another key parameter, namely, the uncorrelated roughness which is an intrinsic characteristic related to the choice of both the deposition technique and the materials. This intrinsic roughness is found to be very low (2 Å) and constitutes a good argument in favour of the use of the RF-MS technique for EUV mirror deposition.

Extreme Ultraviolet Lithography

10.1088/0953-8984/14/39/305

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Instability and structural transformation of amorphous ultra-thin W-Si multilayer structures during heavy ion irradiation

Applied Surface Science (1990)

J. Marfaing W. Marine B. Vidal M. Toulemonde Mazhar Ali

10.1016/0169-4332(90)90182-y

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Citations (7)

Some Characteristics of X-Ray Multilayered Thin Films Made with A Plasma Controlled System

MRS Proceedings (1995)

M. Cilia Andrey Yakshin H. Trambly B. Vidal

Cavity magnetron

Reflection

Deposition

10.1557/proc-382-95

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Raman scattering from carbon in tungsten/carbon multilayer films

Journal of Applied Physics (1993)

Zuimin Jiang B. Vidal G. Desrousseaux V. Dupuis M. Piécuch

Period expansion after annealing in tungsten/carbon (W/C) multilayer films has been observed by several authors. Although most results have emphasized that the carbon layers play the important role in such thermal evolution, it is important to clarify the structure of the carbon atoms in those multilayers both before and after annealing in order to explain such period expansion more clearly. In this paper, Raman scattering is carried out on the W/C multilayers fabricated by various methods, all of which showed different period expansion values ranging from 0% to 20%. We show that the initial carbon in those multilayers becomes graphitized differently depending on the fabrication methods. The carbon fabricated by rf sputtering under a reactive gas has the highest amount of graphite component as compared with those prepared under a pure argon gas atmosphere. After annealing at 1000 °C, graphitization can be observed, but there are no obvious structural differences for the carbon in all the annealed W/C multilayer films. Such graphitization of the carbon layer causes a decrease in its density, and thus an increase in its thickness. Due to the different initial states of the carbon in the multilayers produced by the different methods and to the identical final state after annealing, the different carbon layer thickness expansions are expected and do agree with the small angle x-ray diffraction measurements.

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Carbon fibers

10.1063/1.354153

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Citations (13)

Some Characteristics of Multilayers Produced by Magnetron Sputtering Device

Springer eBooks (1988)

B. Vidal R. Rivoira R. Philip Y. Lepêtre

10.1007/978-1-4757-0091-6_31

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Dispositif original de mesures des facteurs de réflexion d'une couche métallique épaisse en lumière polarisée

Thin Solid Films (1988)

R. Philip B. Vidal R. Fraïssé

10.1016/0040-6090(88)90691-8

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Citations (1)

Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations

Applied Physics Letters (1990)

J. Marfaing W. Marine B. Vidal M. Toulemonde Mazhar Ali

Ultrathin amorphous multilayers structures (1.55 nm bilayer period) were irradiated by high-energy heavy ion (127I and 238U ions). Transmission electron microscopy study shows that the ion-material interaction in such a configuration leads to an irreversible transformation of the initial amorphous structures. In this letter, we report the first observation of the crystallization of the multilayers induced by the heavy ion irradiations with a subsequent formation of a new WSi structure. The crucial role of the electronic effects in the crystallization process is discussed relatively to the other phenomena induced under the ion irradiation.

10.1063/1.104052

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Citations (17)