V. Babentsov

V.E. Lashkaryov Institute of Semiconductor Physics

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J. Franc

Charles University

M. Fiederle

University of Freiburg

R. B. James

Savannah River National Laboratory

E. Diéguez

Universidad Autónoma de Madrid

A. Fauler

University of Freiburg

K.W. Benz

University of Freiburg

V. Corregidor

University of Lisbon

N. I. Tarbaev

Institute of Semiconductor Physics

N.V. Sochinskii

Universidad Autónoma de Madrid

A. Vlasenko

Rostov State Medical University

Cooperative Institutions

V.E. Lashkaryov Institute of Semiconductor Physics

National Academy of Sciences of Ukraine

Charles University

University of Freiburg

Czech Academy of Sciences, Institute of Physics

Centre National de la Recherche Scientifique

Institute of Semiconductors

Institute of Semiconductor Physics

Universidad Autónoma de Madrid

Brookhaven National Laboratory

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Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe

Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

V. Babentsov

The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs.In CdTe nanocrystals these levels are: a hole trap at the energy E V + 0.5 eV and an electron trap at E c -0.5 eV.In CdSe nanocrystals, detected were two hole traps at E v + 0.52 eV and E v + 0.8 eV, and two electron traps at E c -0.25 eV and E c -0.65 eV.The 2+/1+ level of V Cd or Te i is suggested to be an acceptor, and the 2-/1-level of an antisite defect is suggested to be a donor level.

Cadmium telluride photovoltaics

Acceptor

10.15407/spqeo9.03.094

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Citations (17)

Behaviour of Li residual impurity in high-resistance cadmium telluride under the annealing of short duration. Povedenie ostatochnoj primesi Li v vysokoomnom telluride kadmiya pri kratkovremennom otzhige

V. Babentsov S. I. Gorban G. I. Zhovnir L Rashkovetskij

The results of study are given on the behaviour of Li residual impurity using PL spectra of high-resistant p-type cadmium telluride at 4.2 K before and after its short-term annealing at 873 K in the atmosphere of saturated cadmium and tellurium vapors, as well as in the atmosphere of Cd, Hg and Te vapors formed above Cd{sub 0.2}Hg{sub 0.8}Te solid solution. It is established that short-term annealing of specially nondoped specimens of p-type CdTe, containing Li residual impurity in saturated cadmium vapors at 873 K results in conductivity changes from p-type to n-type in the near-the-surface material layer due to variation of stoichiometry deviation to the cadmium excess, and redestribution of Li impurity from Cd nodes into interstitials.

Tellurium

Cadmium telluride photovoltaics

Stoichiometry

Source

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VPE of the Hg1−xCdx Te ohmic contact layers on p-CdTe

physica status solidi (a) (1993)

N.V. Sochinskii V. Babentsov S. V. Kletskii M. D. Serrano E. Diéguez

Hg1−xCdx Te ohmic contact layers are grown on p-CdTe bulk samples by VPE using a Hg0.2Te0.8 melt solution as a source at T = 450 to 600 °C and t = 0.5 to 8 h. It is shown that thin (r < 10 μm) layers with a sharp interface and a gapless composition (x < 0.18) over the main part of their thickness can be obtained at T < 550 °C and t > 1 h. The PL spectra of p-CdTe samples in the edge emission range at 4.2 K are investigated. The VPE process is found to reduce the Vcd concentration and to improve the uniformity of the PL spectral distribution over the samples volume. Hg1−xCdxTe Kontaktschichten werden auf p-CdTe Volumenproben durch VPE aufgewachsen. Als Ausgangsmaterial wird eine Hg0.2Te0.8 Schmelze bei T = 450 bis 600 °C für t = 0,5 bis 8 h benutzt. Es wird gezeigt, daß dünne Schichten (r < 10 μm) mit scharfer Grenzfläche und energielückenloser Zusammensetzung (x < 0,18) über den größten Teil ihrer Breite bei T < 550 °C und t > 1 h hergestellt werden können. Das Photolumineszenzspektrum von p-CdTe Proben wird innerhalb der Emissionsgrenzen bei 4,2 K untersucht. Es wird festgestellt, daß das VPE Verfahren die Vcd Konzentration reduziert, und die Uniformität des Photolumineszenzspektrums im Probenvolumen verbessert wird.

Ohmic contact

Cadmium telluride photovoltaics

10.1002/pssa.2211400215

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Citations (14)

Dislocations and defect structure around micro-indentations and Te precipitates in CdTe

V. Babentsov Ф. Ф. Сизов J. Franc P. Fochuk Ge Yang

We investigated dislocation-related electronic states induced by dislocation motion in CdTe-based semiconductors. Dislocations cause various types of electronic defect states in the bandgap of semiconductors, namely, defects created by different types of dislocations, and those due to an impurity or native defect segregated around the dislocations. The aim of this work was to further clarify, on the basis of an analysis of the lattice deformation, whether these defects belong to either the Te or Cd sublattice and to formulate a model describing such defects.

Cadmium telluride photovoltaics

Lattice (music)

Wide-bandgap semiconductor

10.1109/nssmic.2012.6551943

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Point and nanoscale defects in Cd(S, Se, Te) crystals induced by plastic deformation

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2010)

V. Babentsov Vitalii Boiko R. Grill J. Franc G. A. Shepelskiĭ

The effect of uniaxial plastic deformation, indentation, and scribing along the selected axes on the excitonic and deep level photoluminescence (PL) of CdS, CdSe, CdTe, and ternary CdSeTe compounds has been studied. Dislocations movement produces new near band-gap narrow PL lines, and changes initial wide PL bands (the deep level emission), in particular, a relative intensity increase or appearing of the near midgap 0.8 eV, 1.1 and 1.45 eV bands in CdTe, and corresponding PL bands in other II-VI compounds (CdS, CdSe, and CdSeTe) (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Cadmium telluride photovoltaics

Indentation

10.1002/pssc.200983213

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Growth of high-resistivity CdTe and (Cd,Zn)Te crystals

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2004)

M. Fiederle A. Fauler V. Babentsov J.‐P. Konrath J. Franc

CdTe and (Cd,Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 10⁸ Ωcm up to 2 x 10¹⁰ Ωcm and 3 x 10^-3 cm²/V for the mobility-lifetime product for electrons for the indium doped material.

Cadmium telluride photovoltaics

Tellurium

10.1117/12.506032

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Citations (3)

Compensation and trapping in large bandgap semiconductors: Tuning of the defect system in CdZnTe

Journal of Crystal Growth (2009)

V. Babentsov J. Franc R. B. James

Ingot

Crystal (programming language)

Photosensitivity

10.1016/j.jcrysgro.2009.02.043

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Citations (6)

Defect structure of Sn-doped CdTe

Journal of Electronic Materials (2003)

J. Franc M. Fiederle V. Babentsov A. Fauler K. W. Benz

Cadmium telluride photovoltaics

Solid-state physics

Resistive touchscreen

10.1007/s11664-003-0069-3

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Citations (25)

ChemInform Abstract: Characterization of Compensation and Trapping in CdTe and CdZnTe: Recent Advances

ChemInform (2009)

V. Babentsov J. Franc Pavel Hoeschl M. Fiederle K.W. Benz

Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

Characterization

Cadmium telluride photovoltaics

10.1002/chin.200950219

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Citations (1)

Doping, compensation, and photosensitivity of detector grade CdTe

Journal of materials research/Pratt's guide to venture capital sources (2008)

V. Babentsov J. Franc A. Fauler M. Fiederle R. B. James

Photosensitivity

Photoelectric effect

Cadmium telluride photovoltaics

Surface Photovoltage

Photoconductivity

10.1557/jmr.2008.0198

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Citations (8)