Shenjin Zhang

Technical Institute of Physics and Chemistry

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Qinjun Peng

Chinese Academy of Sciences

Fengfeng Zhang

Tengzhou Central People's Hospital

Zhimin Wang

Soochow University

Feng Yang

Chinese Academy of Sciences

Zuyan Xu

Technical Institute of Physics and Chemistry

Xingjiang Zhou

Chinese Academy of Sciences

Nan Zong

Chinese Academy of Sciences

Chuangtian Chen

Technical Institute of Physics and Chemistry

Zuyan Xu

Beihang University

Dafu Cui

Chinese Academy of Sciences

Cooperative Institutions

Chinese Academy of Sciences

278

University of Chinese Academy of Sciences

177

Institute of Physics

146

National Laboratory for Superconductivity

Technical Institute of Physics and Chemistry

Czech Academy of Sciences, Institute of Physics

Songshan Lake Materials Laboratory

University of Science and Technology of China

Huazhong University of Science and Technology

Sun Yat-sen University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Giant and reversible electronic structure evolution in a magnetic topological material EuCd2As2

Physical review. B./Physical review. B (2022)

Yang Wang Cong Li Taimin Miao Shuai Zhang Yong Li

The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2, we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which cannot be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below ∼15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic, and topological properties of EuCd2As2 can be greatly modified by doping. This work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.Received 8 December 2021Revised 3 July 2022Accepted 11 August 2022DOI:https://doi.org/10.1103/PhysRevB.106.085134©2022 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectronic structureMagnetismTopological materialsCondensed Matter, Materials & Applied Physics

10.1103/physrevb.106.085134

Cite

Citations (13)

Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment

Proceedings of the National Academy of Sciences (2012)

Chaoyu Chen Shaolong He Hongming Weng Wentao Zhang Lin Zhao

The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi 2 Se 3 and Bi 2 Te 3 , upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications.

Topological insulator

Surface States

10.1073/pnas.1115555109

Cite

Citations (175)

DUV/VUV All-Solid-State Lasers: Twenty Years of Progress and the Future

IEEE Journal of Selected Topics in Quantum Electronics (2018)

Qinjun Peng Nan Zong Shenjin Zhang Zhimin Wang Feng Yang

We briefly review the main methods for generating deep ultraviolet (DUV) or vacuum ultraviolet (VUV) light sources, and describe in detail our progress in the design and development of precise and practical DUV all-solid-state lasers based on second harmonic generation. Their incorporation into various kinds of advanced analytic instruments is also discussed. Already, many significant results have been obtained and new phenomena discovered with these state-of-the-art tools. In the last part, we look at possible future developments in the field of DUV/VUV all-solid-state lasers and their potential applications in an even broader range of research fields.

Vacuum ultraviolet

Ultraviolet

10.1109/jstqe.2018.2829665

Cite

Citations (24)

Ubiquitous coexisting electron-mode couplings in high-temperature cuprate superconductors

Proceedings of the National Academy of Sciences (2023)

Hongtao Yan Jin Mo Bok Jun-Feng He Wentao Zhang Qiang Gao

In conventional superconductors, electron-phonon coupling plays a dominant role in generating superconductivity. In high-temperature cuprate superconductors, the existence of electron coupling with phonons and other boson modes and its role in producing high-temperature superconductivity remain unclear. The evidence of electron-boson coupling mainly comes from angle-resolved photoemission (ARPES) observations of ∼ 70-meV nodal dispersion kink and ∼ 40-meV antinodal kink. However, the reported results are sporadic and the nature of the involved bosons is still under debate. Here we report findings of ubiquitous two coexisting electron-mode couplings in cuprate superconductors. By taking ultrahigh-resolution laser-based ARPES measurements, we found that the electrons are coupled simultaneously with two sharp modes at ∼ 70meV and ∼ 40meV in different superconductors with different dopings, over the entire momentum space and at different temperatures above and below the superconducting transition temperature. These observations favor phonons as the origin of the modes coupled with electrons and the observed electron-mode couplings are unusual because the associated energy scales do not exhibit an obvious energy shift across the superconducting transition. We further find that the well-known “peak-dip-hump” structure, which has long been considered a hallmark of superconductivity, is also omnipresent and consists of “peak-double dip-double hump” finer structures that originate from electron coupling with two sharp modes. These results provide a unified picture for the ∼ 70-meV and ∼ 40-meV energy scales and their evolutions with momentum, doping and temperature. They provide key information to understand the origin of these energy scales and their role in generating anomalous normal state and high-temperature superconductivity.

10.1073/pnas.2219491120

Cite

Citations (3)

A picosecond widely tunable deep-ultraviolet laser for angle-resolved photoemission spectroscopy

Chinese Physics B (2013)

Fengfeng Zhang Feng Yang Shenjin Zhang Zhiyi Xu Zhimin Wang

We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti:sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 min is less than ±2%.

Picosecond

Ultraviolet

Prism

Harmonic

10.1088/1674-1056/22/6/064212

Cite

Citations (6)

Theoretical and Experimental Analysis of the Effect of Vaporization Heat on the Interaction between Laser and Biological Tissue

Applied Sciences (2024)

Yuru Cheng Yu Shen Yuxia Gao Ya Wen Ze Lv

A theoretical model, based on the classical Pennes’ bioheat theory, incorporating various boundary conditions, was established and compared to analyze the influence of the latent heat of vaporization via simulation. The aim was to elucidate the extent of its influence. The thermal damage rate, governed by the vaporization heat of biological tissue, is introduced as a key factor. Functional relationships between temperature and incident laser power, spatial position, and time are derived from the classical Pennes’ bioheat equation. According to the theoretical model, numerical simulations and experimental validations are conducted using Comsol Multiphysics 6.0, considering the tissue latent heat of vaporization. The model incorporating the latent heat of vaporization proved more suitable for analyzing the interactions between laser and biological tissue, evident from the degree of fit between simulated and experimental data. The minimum deviations between theoretical and experimental observations were determined to be 2.43% and 5.11% in temperature and thermal damage, respectively. Furthermore, this model can be extended to facilitate the theoretical analysis of the impact of vaporization heat from different primary tissue components on laser-tissue interaction.

Vaporization

Multiphysics

Bioheat Transfer

Biological tissue

10.3390/app14104333

Cite

Citations (0)

Investigation on Coaxial Multiwavelength Generation in a CVD Diamond Crystal in the Near-IR Regime

International Journal of Optics (2021)

Jingjie Hao Ze Lv Y.R. Shen Nan Zong Wei Tu

Optical properties and high-order stimulated Raman scattering (SRS) generation in a homemade CVD diamond crystal with 3 × 3 mm2 aperture are investigated in this paper. The high order of the Raman laser has been studied theoretically and demonstrated experimentally. By simulating the Stokes components at different pump intensities and the divergence angles, the pump source was well matched with the size of the crystal. Pumped by using a 1064 nm picosecond laser, five coaxial wavelengths were obtained for the first time based on the CVD diamond at 932 nm, 1064 nm, 1240 nm, 1485 nm, and 1851 nm. This work provides a reference for further development of the optical grade diamond crystal with a large aperture.

Coaxial

Picosecond

Crystal (programming language)

Aperture (computer memory)

Numerical aperture

10.1155/2021/6642261

Cite

Citations (0)

Compact 18 mJ 100 Hz Nanosecond Yb:YAG Laser Oscillation at Room Temperature

Research Square (Research Square) (2024)

Zhou Yinan Jing Yang Hao Wang Weihao Liu Zong-Zhe Zhang

Abstract A compact High energy end-pumped Yb:YAG rod laser oscillator with nanosecond (ns) pulse was demonstrated. By combining the quasi three-level characteristics of Yb: YAG and the steps method simulation, the crystal parameters were optimized. By using a 2.0 at.% doped Yb:YAG rod with 10 mm length, a 1030 nm laser output energy of 18 mJ with 100 Hz, and ~ 30 ns was achieved through direct oscillator. The beam quality M 2 factor was 1.13. The setup of the whole system had a compact footprint of 300 × 400 mm 2 . Hopefully, the end-pumped Yb:YAG with a moderate doped concentration provides an alternative solution for a compact seed source for high energy 100 Hz ns laser.

Nanosecond

Oscillation (cell signaling)

Crystal (programming language)

Q-switching

10.21203/rs.3.rs-3833577/v1

Cite

Citations (0)

Narrow Linewidth 177.3-nm Nanosecond Laser With High Efficiency and High Power

IEEE Photonics Technology Letters (2014)

Zhi Xu Wei Tu Feng Yang Nan Zong Baoshan Wang

We demonstrate a high-efficiency high average power vacuum ultraviolet (VUV) 177.3-nm laser with a narrow linewidth generated by second harmonic (SH) generation from a nanosecond (ns) 355-nm laser in the

${\rm KBe}_{2}{\rm BO}_{3}{\rm F}_{2}$

crystal. The 355-nm pumping source was a frequency-tripled

$Q$

-switched 1064-nm Nd:YAG oscillator–amplifier laser system, in which a quartz etalon was used to compress the linewidth of 1064-nm laser. Under a pump power of 5.2 W at 355 nm with a linewidth of 2 pm, a high average power of 146.5 mW at 177.3 nm with a linewidth of

${\sim}{\rm 0.71}~{\rm pm}$

was obtained, corresponding to an SH conversion efficiency as high as 2.8%. This is, to the best of our knowledge, the highest output power and highest SH conversion efficiency for the ns 177.3-nm lasers. This VUV coherent light can be used as light source for fine precision spectroscopy and semiconductor photolithography owing to its narrow linewidth, high energy resolution, and high average power.

Laser linewidth

Nanosecond

10.1109/lpt.2014.2311091

Cite

Citations (14)

Growth characteristics and SHG properties of Li:SrB4O7

Optical Materials (2024)

Wu Yuhao Fengfeng Zhang Shenjin Zhang Ying Zhao Zhiwei Jiao

10.1016/j.optmat.2024.115433

Cite

Citations (0)