X.W. Fan

Beijing Institute of Technology

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D.Z. Shen

Shanghai University

You Lü

Daresbury Laboratory

Yichun Liu

Northeast Normal University

Bin Yao

Jilin University

J.Y. Zhang

Chinese Academy of Sciences

D. Z. Shen

Beijing Academy of Artificial Intelligence

Dongxu Zhao

Fujian Agriculture and Forestry University

Bing Li

Beihang University

C. X. Shan

Beijing Jiaotong University

Z.Z. Zhang

North China Electric Power University

Cooperative Institutions

Chinese Academy of Sciences

186

Changchun Institute of Optics, Fine Mechanics and Physics

130

University of Chinese Academy of Sciences

Institute of Physics

Northeast Normal University

University of Science and Technology of China

Jilin University

Institute of Semiconductors

Changchun University of Science and Technology

Beijing Institute of Technology

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Preferred orientation of ZnO nanoparticles formed by post-thermal annealing zinc implanted silica

Solid State Communications (2002)

Y.X. Liu Yichun Liu D.Z. Shen G. Z. Zhong X.W. Fan

10.1016/s0038-1098(02)00006-6

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Citations (43)

Free exciton emission in forward-biased CdS MIS diodes

Solid State Communications (1981)

X.W. Fan J. Woods

Atmospheric temperature range

Lattice (music)

10.1016/0038-1098(81)90322-7

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Citations (3)

A facile route to arsenic-doped p-type ZnO films

Journal of Crystal Growth (2009)

Shuangpeng Wang C. X. Shan Bing Li J.Y. Zhang Bin Yao

10.1016/j.jcrysgro.2009.06.002

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Citations (18)

Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering

Journal of Applied Physics (2006)

Bin Yao D.Z. Shen Zhishuo Zhang Xinwei Wang Zhongming Wei

A yellow-orange nitrogen-doped zinc oxide (ZnO:N) film was deposited on a quartz glass substrate at 510K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The lattice constants of the as-grown ZnO:N are much larger than those of undoped ZnO, and decrease with increasing annealing temperature due to escape of the nitrogen from the ZnO:N and decrease of tensile stress, accompanied with color change from yellow-orange to pale yellow. The nitrogen occupies two chemical environments in the ZnO:N based on x-ray photoelectron spectroscopy measurement. One is NO acceptor formed by substitution of N atom for O sublattice, and another is (N2)O double donors produced by substitution of N molecular for O site, which make the lattice constants expanded. The as-grown ZnO:N film shows insulating, but behaves p-type conduction in the dark after annealed at 863K for 1h under 10−3Pa. Unfortunately, the p-type conduction is not stable and reverts to n type soon. However, after illuminated by sunlight for several minutes, the n-type ZnO:N transforms into p type again. The mechanism of the transformation of the conductivity behavior is discussed in the present work.

Lattice constant

10.1063/1.2208414

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Citations (66)

Magnetism origin of Mn-doped ZnO nanoclusters

Journal of Magnetism and Magnetic Materials (2005)

J.H. Li D.Z. Shen J.Y. Zhang Di Zhao Bingsheng Li

Nanoclusters

Wurtzite crystal structure

Magnetism

Hysteresis

10.1016/j.jmmm.2005.08.025

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Citations (92)

Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering

Journal of Applied Physics (2005)

Jianguo Si Yichun Liu Cunhua Xu Y. X. Liu Changlu Shao

ZnO particles embedded in SiO2 thin films were prepared by a radio-frequency magnetron sputtering technique. X-ray diffraction (XRD) and optical-absorption spectra showed that ZnO particles with hexagonal wurtzite structure had been embedded in the SiO2 matrix, and the size of ZnO particles increased with increasing annealing temperature from 773to973K. Raman-scattering and Fourier transform infrared (FTIR) spectrum measurements also confirmed the presence of ZnO particles. When the annealing temperature was lower than 973K, room-temperature photoluminescence (PL) spectra showed dominative deep-level emissions in the visible region and very weak ultraviolet emissions. As the annealing temperature increased to 973K, an emission band in the ultraviolet region besides the emissions from free and bound excitons recombination was observed in the low-temperature PL spectra. The origin of the ultraviolet emission bands was discussed with the help of temperature-dependent PL spectra. When the annealing temperature was higher than 973K, Zn2SiO4 particles were formed, as shown by XRD and FTIR results.

Wurtzite crystal structure

Ultraviolet

10.1063/1.1897493

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Citations (71)

Raman spectra and phonon modes of Mg_xZn_1–xO alloy films

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2006)

Zhipeng Wei You Lü D.Z. Shen Zhishuo Zhang Chen Wu

Abstract Hexagonal Mg x Zn 1–x O alloy layers with 0 ≤ x < 0.3 have been grown by plasma‐assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x‐ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar + laser, and 325 nm line from He‐Cd laser by backscattering geometry. Four Raman modes (E 2 high , LO, TO, multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal Mg x Zn 1–x O with different Mg contents. The optical phonon frequencies were found to display one‐mode behaviour for all the samples since no separate ZnO‐ and MgO‐like modes were observed. The long‐wavelength frequencies of ZnO‐like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random‐element‐ isodisplacement model (MREI). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Crystal (programming language)

10.1002/pssc.200564642

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Citations (11)

Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C₂H₅)₂and CO₂gas mixtures

Journal of Physics D Applied Physics (2003)

Zhi Zhang Yichun Liu B S Li X T Zhang You Lü

To improve ZnO thin film quality, the ZnO thin films grown on silicon (100) by plasma enhanced chemical vapour deposition from Zn(C2H5)2 and CO2 gas mixtures at a low temperature of 120°C are annealed in an oxygen ambient at temperature ranging from 600°C to 1000°C. X-ray diffraction spectra indicate that ZnO films possess a polycrystalline hexagonal wurtzite structure. Atomic force microscopy results show an increase of ZnO grain size with the increase of annealing temperature. The photoluminescence is closely related to the annealing temperature. The free exciton binding energy deduced from the temperature-dependent PL spectra is about 59 meV for the ZnO film annealed at 900°C, suggesting that the film quality can be improved by annealing process.

Wurtzite crystal structure

10.1088/0022-3727/36/6/314

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Citations (61)

Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters (2006)

Jianwu Sun Ying‐Bing Lu Yichun Liu D.Z. Shen Zhizhen Zhang

The hole transport properties of nitrogen doped p-type ZnO grown on c-plane sapphire (c-Al2O3) were investigated by temperature-dependent Hall-effect measurements. The experimental Hall mobility was found to be considerably lower than the calculated mobility including ionized impurity scattering, acoustic-mode deformation potential scattering, piezoelectric potential scattering, and polar optical phonon scattering. Atomic force microscopy and x-ray diffraction measurements demonstrated that p-type ZnO on c-Al2O3 consisted of two kinds of 30°-rotated domains surrounded by grain boundaries. Thus, taking the effect of inhomogeneous microstructure on the mobility into account, the calculated mobility agreed favorably with the experimental data. This agreement indicates that besides ionized impurity and acoustic deformation potential scattering at low temperatures and the polar optical phonon scattering at high temperatures, the effects of the inhomogeneous microstructure in p-type ZnO films play a more important role in determining the hole mobility.

Ionized impurity scattering

Phonon scattering

Electron Mobility

10.1063/1.2398908

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Citations (25)

Blue electroluminescence in forward-biased ZnSe diodes

IEEE Transactions on Electron Devices (1981)

X.W. Fan J. Woods

The electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystal ZnSe has been studied over the temperature range 20-290 K. At room temperature the emission consisted of two intense bands in the blue at 4655 and 4770 Å, while at the lowest temperatures much more structure was observed. Thus at 20 K free and bound exciton emission was particularly intense, and the donor-acceptor (DA) pair band emission (the Q series), together with its accompanying free-to-bound series was also prominent. The bound exciton, pair band, and free-to-bound emission were all substantially quenched as the temperature was increased, so that at room temperature the two blue bands were the only remaining components of the luminescence. Evidence is produced to demonstrate that the band at 4655 Å is associated with free exciton recombination following scattering from free electrons in the conduction band. The band at 4770 Å is attributed to free exciton recombination with the emission of two longitudinal optical (LO) phonons.

10.1109/t-ed.1981.20360

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Citations (40)