Xili Gao

Tsinghua University

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Xiaozhong Zhang

Tsinghua University

Caihua Wan

Institute of Physics

Qingbin Zheng

Chinese University of Hong Kong, Shenzhen

Lanzhong Hao

China University of Petroleum, East China

Qingzhong Xue

China University of Petroleum, East China

Keyou Yan

South China University of Technology

Xiaoli Tan

North China Electric Power University

Lihua Wu

Beijing Institute of Technology

Qun Li

Chuzhou University

Jimin Wang

University of Science and Technology Beijing

Cooperative Institutions

Tsinghua University

Chinese Academy of Sciences

Institute of Microelectronics

University of Chinese Academy of Sciences

Huazhong University of Science and Technology

China University of Petroleum, Beijing

Hong Kong University of Science and Technology

University of Hong Kong

University of Electronic Science and Technology of China

South China University of Technology

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Computational analysis of effect of modification on the interfacial characteristics of a carbon nanotube–polyethylene composite system

Applied Surface Science (2008)

Qingbin Zheng Dan Xia Qingzhong Xue Keyou Yan Xili Gao

Surface Modification

Chemisorption

10.1016/j.apsusc.2008.09.077

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Citations (133)

Influence of chirality on the interfacial bonding characteristics of carbon nanotube polymer composites

Journal of Applied Physics (2008)

Qingbin Zheng Qingzhong Xue Keyou Yan Xili Gao Qun Li

The influence of chirality on the interfacial bonding characteristics of single-walled nanotubes (SWNTs) reinforced polymer composites was investigated using molecular mechanics and molecular dynamics simulations. The simulations indicate that the interfacial bonding and shear stress between the SWNT and the poly(methyl methacrylate) depends on the chirality. For SWNTs with similar molecular weights, diameters, and lengths, nanotubes with larger chiral angles achieve higher bonding energy and the armchair nanotube may be the best nanotube type for reinforcement. The general conclusions derived from this work may be of importance in devising advanced nanotube reinforced composites.

Chirality

10.1063/1.2844289

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Citations (30)

Abnormal I-V characteristics and metal-insulator transition of Fe-doped amorphous carbon∕silicon p-n junction

Journal of Applied Physics (2007)

Lanzhong Hao Qingzhong Xue Xili Gao Qun Li Qingbin Zheng

Simple p-C∕n-Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage (I-V) characteristics have been investigated. The p-n junctions show good rectifying properties in a large voltage scope and interesting I-V characteristics. The most interesting phenomenon observed in these p-n junctions is that the temperature dependence of some junction resistance shows a metal-insulator transition whose transition temperature is hugely modulated from 162to236K by a bias voltage increasing from 20to40V. This work shows that amorphous carbon films combined with other semiconductor materials can result in some interesting properties that may have potential applications.

Biasing

Metal–insulator transition

10.1063/1.2710760

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Citations (23)

Enhancing Photovoltaic Characteristics of Iron Doped Amphous Carbon/Al

Japanese Journal of Applied Physics (2011)

Xinyu Tan Xiaozhong Zhang Caihua Wan Xili Gao Hong Lin

Carbon fibers

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Large dielectric constant of the chemically purified carbon nanotube/polymer composites

Materials Letters (2008)

Qun Li Qingzhong Xue Qingbin Zheng Lanzhong Hao Xili Gao

Percolation (cognitive psychology)

High-κ dielectric

10.1016/j.matlet.2008.06.047

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Citations (88)

Positive and Negative magnetoresistance of semiconduting Fe$_{x}$-C$_{1-x}$/Si thin film

Bulletin of the American Physical Society (2010)

Xiaozhong Zhang Lihua Wu Wan Cai-Hua Xili Gao

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Enhancing Photovoltaic Characteristics of Iron Doped Amphous Carbon/Al₂O₃/Si Solar Cell by Al₂O₃Interface Passivation

Japanese Journal of Applied Physics (2011)

Xiaoli Tan Xiaozhong Zhang Caihua Wan Xili Gao Hong Lin

This letter reports the enhanced photovoltaic (PV) performance of Fe doped amorphous carbon (a-C) film/n-Si heterojunctions by depositing a thin Al2O3 layer at the interface of a-C:Fe and Si substrate. We demonstrate that a thin Al2O3 film at the interface of Fe-doped a-C/Si heterojunction allows significantly improving the devices' PV performances up to one order of magnitude under AM1.5 illumination. The enhancement of the PV effect on a-C:Fe/Al2O3/Si solar cells can be ascribed to the inserted Al2O3 layer which increases the built-in electric field barrier and realizes interface passivation by use of suppressing the charge recombination, reducing the interface states.

Passivation

Carbon fibers

10.7567/jjap.50.070204

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Citations (4)

Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

Journal of Applied Physics (2012)

Pinggang Peng Dan Xie Yi Yang Yongyuan Zang Xili Gao

In this paper, nonvolatile bipolar resistive memory effects were observed in nitrogen doped diamond-like carbon (DLC) thin films prepared by a pulsed laser deposition technique. It is observed that the fabricated Pt/Ti/DLC/Pt structure exhibits good memory performances with an ON/OFF ratio >10, data retention time >104 s, and low operation voltage (<1.5 V). The current mechanism is fitted by Ohmic and space charge limited conduction laws in low resistance state and high resistance state scenarios. The formation/rupture of metal filaments is due to the diffusion of the titanium ions.

Ohmic contact

Pulsed Laser Deposition

Diamond-like carbon

Carbon fibers

Deposition

10.1063/1.3703063

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Citations (32)

Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction

Applied Physics Letters (2007)

Xili Gao Qingzhong Xue Lanzhong Hao Qun Li Qingbin Zheng

Amorphous carbon film/n-Si (a-C∕Si) junctions have been fabricated by direct current magnetron sputtering and their current-voltage (I-V) characteristics have been investigated. The results show that the gas pressure has a large effect on the reverse bias I-V characteristics of the junctions. For example, the reverse current can increase by 3300% when the gas pressure decreases from 100000to100Pa. The effect of gas pressure may be attributed to the physisorption process of gas molecules which increases the space charge width and changes the surface states of the junction.

Biasing

10.1063/1.2776017

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Citations (15)

Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates

Applied Physics Letters (2009)

Caihua Wan Xiaozhong Zhang Xin Zhang Xili Gao Xiaoli Tan

The Fe doped a-C films on n-type silicon substrates were deposited by pulse laser deposition. The Fe doped a-C films are p-type semiconductor and they are rich in sp2 (∼75%). I-V characteristics and photoconductivity of the structures were measured in the current in-plane geometry. The photoconductivity with magnitude of 170∼220 was observed under white light illumination with power of 20 mW/cm2 at room temperature. The photoconductivity is ascribed to the p-n junction formed between the p-type a-C: Fe film and the n-type Si substrate whose reverse-biased saturation current increases intensively under illumination.

Photoconductivity

Pulsed Laser Deposition

Saturation (graph theory)

Saturation current

10.1063/1.3177190

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Citations (25)