Chuanhui Gong

Nantong University

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Jie Xiong

Xiangtan University

Xianfu Wang

University of Electronic Science and Technology of China

Junwei Chu

Xi'an Institute of Optics and Precision Mechanics

Jianwen Huang

National Engineering Research Center of Electromagnetic Radiation Control Materials

Tianyu Lei

National Engineering Research Center of Electromagnetic Radiation Control Materials

Gaofeng Rao

National Engineering Research Center of Electromagnetic Radiation Control Materials

Xinchuan Du

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chaoyi Yan

National Engineering Research Center of Electromagnetic Radiation Control Materials

Kai Hu

Zhejiang University

Xuepeng Wang

Shenzhen University

Cooperative Institutions

University of Electronic Science and Technology of China

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chinese Academy of Sciences

Chengdu University

University of Chinese Academy of Sciences

Fudan University

Chengdu University of Information Technology

Institute of Microelectronics

Peking University

State Key Laboratory of Electronic Thin Films and Integrated Devices

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2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Advanced Materials (2020)

Junwei Chu Yang Wang Xuepeng Wang Kai Hu Gaofeng Rao

Abstract The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices’ application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

Valleytronics

10.1002/adma.202004469

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Citations (74)

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

Advanced Materials (2019)

Chuanhui Gong Junwei Chu Chujun Yin Chaoyi Yan Xiaozong Hu

2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Zf , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.

Ultraviolet

Quantum Efficiency

10.1002/adma.201903580

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Citations (76)

Electronic and Photoelectronic Memristors Based on 2D Materials

Advanced Electronic Materials (2022)

Kai Tang Yang Wang Chuanhui Gong Chujun Yin Miao Zhang

Abstract Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed.

Memristor

Neuromorphic engineering

10.1002/aelm.202101099

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Citations (51)

Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

RSC Advances (2018)

Ni-Na Ge Chuanhui Gong Xin-Cai Yuan Huizhong Zeng Xianhua Wei

We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol-gel spin-coating. As the Mn doping concentration increased, lattice constant, grain size and band gap were found to decrease simultaneously. Moreover, the electroforming voltages and threshold voltages were gradually reduced. It can be ascribed to the increase in the density of grain boundaries, and the defects caused by doping Mn and lower formation energy of Mn-O. They would be helpful for the formation of oxygen vacancies and conductive filaments. It is worth mentioning that excellent BRS behaviors can be obtained at a low Mn-doped concentration including enlarged ON/OFF ratio, good uniformity and stability. Compared with other samples, the 1% Mn-doped NiO showed the highest ON/OFF ratio (>10

Non-blocking I/O

Electroforming

Spin Coating

10.1039/c8ra04784g

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Citations (20)

Applications of Tissue Clearing in Central and Peripheral Nerves

Neuroscience (2024)

Cheng He Ye Yuan Chuanhui Gong Xueying Wang Guangming Lyu

Clearing

10.1016/j.neuroscience.2024.03.030

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Citations (1)

2D Group IVB Transition Metal Dichalcogenides

Advanced Functional Materials (2018)

Chaoyi Yan Chuanhui Gong Peihua Wangyang Junwei Chu Kai Hu

Abstract Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano‐, opto‐, thermal‐electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.

Dangling bond

10.1002/adfm.201803305

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Citations (101)

Coupling enhancement mechanisms, materials, and strategies for surface-enhanced Raman scattering devices

The Analyst (2021)

Hongbo Wang Yuqing Liu Gaofeng Rao Yang Wang Xinchuan Du

This review provides an in-depth analysis of coupled SERS devices, including coupling mechanisms, materials, approaches, and bottlenecks.

10.1039/d1an00624j

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Citations (27)

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Advanced Materials (2020)

Yang Wang Xiaoyuan Bai Junwei Chu Hongbo Wang Gaofeng Rao

Power consumption is one of the most challenging bottlenecks for complementary metal-oxide-semiconductor integration. Negative-capacitance field-effect transistors (NC-FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy-efficient devices. However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10 mV dec-1 ) and small-hysteresis NC-FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow-SS NC-FET with small hysteresis is designed. The LiNbO3 NC-FET platform exhibits a record-low SS of 4.97 mV dec-1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch ), drain-sourse bias (Vds ), and gate bias (Vg )) of devices, an optimized SS from ≈40 to ≈10 mV dec-1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy-efficient devices.

Subthreshold Swing

Subthreshold conduction

10.1002/adma.202005353

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Citations (49)

Droplet-Yolo: Field Rice Droplet Detection Based on Yolov8 and Multi-Instance Learning

Chuanhui Gong Qiufeng Wu Changhee Kang Changjian Zhou

10.2139/ssrn.5096354

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Citations (0)

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Journal of Sol-Gel Science and Technology (2017)