Jingguo Huang

Shanghai Institute of Technical Physics

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Zhiming Huang

Fudan University

Yanqing Gao

Henan Normal University

Junhao Chu

Shanghai Institute of Technical Physics

Wei Zhou

University of Shanghai for Science and Technology

Jing Wu

Institute of Materials Research and Engineering

Yu. A. Andreev

Institute of Monitoring of Climatic and Ecological Systems

ГВ

Г. В. Ланский

National Research Tomsk State University

Jinchao Tong

Fudan University

Gaofang Li

Shanghai University of Electric Power

Jinxing Lu

National Institute for Communicable Disease Control and Prevention

Cooperative Institutions

Shanghai Institute of Technical Physics

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Institute of High Current Electronics

National Research Tomsk State University

Siberian Branch of the Russian Academy of Sciences

Fudan University

Russian Academy of Sciences

East China Normal University

Shanghai University of Electric Power

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Investigation of high power terahertz emission in gap crystal based on collinear difference frequency generation

Acta Physica Sinica (2013)

Jingguo Huang Jinxing Lu Wei Zhou Tong Jing-Chao Huang Zhi

Among many terahertz wave generation methods, nonlinear optical collinear difference frequency generation (CDFG) is always regarded as a promising way to achieve the high power, broadband, continual tunable terahertz wave emission. Theoretical analysis shows that a big coherent length (on millimeter scale) in isotropic GaP crystal could be realized by the laser wavelength near 1064 nm in the CDFG process, which meets the condition of high power and broadband terahertz generation. In the experiment, a high power and broadband terahertz wave is achieved from GaP crystal, with its tunable terahertz range 95.9-773.4 μm (0.39-3.13 THz) and the highest terahertz peak power 7 W at 2 THz. The experimental result is generally consistent well with its theoretical calculation.

Crystal (programming language)

Terahertz gap

10.7498/aps.62.120704

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Citations (5)

Absorption coefficient and phase matching angle of KTiOAsO4 at low temperatures in terahertz range for high efficiency terahertz generation

Infrared Physics & Technology (2024)

Gaofang Li H.Q. Ye Jingguo Huang Haoyang Cui Nenghong Xia

Atmospheric temperature range

Terahertz time-domain spectroscopy

Molar absorptivity

10.1016/j.infrared.2024.105238

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Citations (1)

Extreme Sensitivity of Room‐Temperature Photoelectric Effect for Terahertz Detection

Advanced Materials (2015)

Zhiming Huang Wei Zhou Jinchao Tong Jingguo Huang Cheng Ouyang

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.

Photoelectric effect

10.1002/adma.201503350

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Citations (37)

Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector

Wei Zhou Jing Wu Yue Qu Niangjuan Yao Yiming Yin

A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn₁. ₉₆Co_0.96Ni_0.48O₄(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10^-8 W/Hz^{0. 5}. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

Thermal Stability

Black-body radiation

Infrared detector

10.1117/12.2296348

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Properties of BIBO crystal in the terahertz regime

Н. А. Николаев Zhiming Huang Jingguo Huang Yang Li Yu. A. Andreev

In recent years, the terahertz sources have attracted much attention for its special use compared with so for UV-visible range. Crystal with high quality and special properties is their indispensable part. Optical properties such as the absorption coefficient and refractive index at three basic crystal orientations (x, y, and z-direction) of the BIBO crystal have been studied by the Terahertz Time-Domain Spectroscopy at room temperature. A large birefringence was observed. The measured refractive index components were approximated in the form of Sellmeier equations. Phase-matching curves for collinear down-conversion of IR laser frequencies into the THz domain were preliminarily estimated. A prospect of BIBO crystals as THz generators are discussed, and comparison with popular crystals is given.

BIBO stability

Crystal (programming language)

Crystal optics

Terahertz time-domain spectroscopy

10.1117/12.2555663

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Citations (1)

Analysis of the effect of phase-mismatch and material absorption on the terahertz-wave generation from GaSe

Acta Physica Sinica (2011)

Jinxing Lu Zhiming Huang Jingguo Huang Bingbing Wang Xuemin Shen

We analyzed the effect of phase-mismatch and material absorption on the terahertz-wave difference-frequency generation from GaSe theoretically. We calculated the best length of crystal and the corresponding terahertz power under four different conditions and the effect of angle-mismatch on phase-mismatch. The result provided a theoretical basis and reference to nonlinear optical difference-frequency experiments.

Phase difference

Crystal (programming language)

10.7498/aps.60.024209

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Citations (2)

Directly tailoring photon-electron coupling for sensitive photoconductance

Scientific Reports (2016)

Zhiming Huang Wei Zhou Jingguo Huang Jing Wu Yanqing Gao

Abstract The coupling between photons and electrons is at the heart of many fundamental phenomena in nature. Despite tremendous advances in controlling electrons by photons in engineered energy-band systems, control over their coupling is still widely lacking. Here we demonstrate an unprecedented ability to couple photon-electron interactions in real space, in which the incident electromagnetic wave directly tailors energy bands of solid to generate carriers for sensitive photoconductance. By spatially coherent manipulation of metal-wrapped material system through anti-symmetric electric field of the irradiated electromagnetic wave, electrons in the metals are injected and accumulated in the induced potential well (EIW) produced in the solid. Respective positive and negative electric conductances are easily observed in n-type and p-type semiconductors into which electrons flow down from the two metallic sides under light irradiation. The photoconductivity is further confirmed by sweeping the injected electrons out of the semiconductor before recombination applied by sufficiently strong electric fields. Our work opens up new perspectives for tailoring energy bands of solids and is especially relevant to develop high effective photon detection, spin injection and energy harvesting in optoelectronics and electronics.

Photoconductivity

10.1038/srep22938

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THz Absorption and Refraction of KTA Crystal at Low Temperatures

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2019)

Zhiming Huang Jingguo Huang Yanqing Gao Gaofang Li Yu. М. Andreev

Absorption and refractive indices spectra for nonlinear potassium titanyl arsenate (KTA) crystal are measured by THz time-domain spectrometer (THz-TDS) at 12 discrete temperatures in the range of 5 - 300 K with the accuracy of ±2 K and presented.

Crystal (programming language)

10.1109/irmmw-thz.2019.8873809

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Room temperature InGaAs hot electron detector for THz/subTHz regions

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2014)

Jinchao Tong Jingguo Huang Zhiming Huang Junhao Chu

A THz/subTHz radiation detector based on MOCVD-grown modulation-doped In_xGa_1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10^-9 W/Hz^1/2 at room temperatures.

Noise-equivalent power

Particle detector

10.1117/12.2054015

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Room‐Temperature Photoconductivity Far Below the Semiconductor Bandgap

Advanced Materials (2014)

Zhiming Huang Jinchao Tong Jingguo Huang Wei Zhou Jing Wu

A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal–semiconductor–metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials.

Photoconductivity

10.1002/adma.201402352

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Citations (27)