ÁR

Álvaro Rosa

Universitat Politècnica de València

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Pablo Sanchis

Universitat Politècnica de València

Amadeu Griol

Universitat Politècnica de València

Ana M. Gutierrez

Universitat Politècnica de València

Pau Castera

Eindhoven University of Technology

A. Brimont

Universitat Politècnica de València

Bertrand Vilquin

Institut des Nanotechnologies de Lyon

J. Fompeyrine

IBM Research - Zurich

Domenico Tulli

Quside Technologies (Spain)

Luis Sánchez

National Polytechnic School

Sébastien Cueff

Institut des Nanotechnologies de Lyon

Cooperative Institutions

Centre National de la Recherche Scientifique

Institut des Nanotechnologies de Lyon

Université Claude Bernard Lyon 1

École Centrale de Lyon

Universitat Politècnica de València

Institut National des Sciences Appliquées de Lyon

IBM Research - Zurich

École d'Ingénieurs en Chimie et Sciences du Numérique

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

ETH Zurich

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Electrical switching in hybrid VO<inf>2</inf>/Si photonic structures

Luis Sánchez Álvaro Rosa T. Angelova Juan Hurtado Amadeu Griol

The integration of active materials on silicon is emerging as a promising field in silicon photonics to improve the performance metrics of key photonic components, in particular active components. Active materials allow tuning their optical properties as function of external stimuli. Amongst them, vanadium dioxide (VO 2 ) has been largely investigated for different applications due to its controllable change between an insulating and a metallic phase. For photonic applications, VO 2 shows a promising performance due to the abrupt change in the refractive index between the two phases across the semiconductor to metal transition (SMT). In this work, we will present our recent results for enabling disruptive electrical switching performance in hybrid VO 2 /Si photonic structures. Results have been obtained in the framework of the FP7-ICT-2013-11-61456 SITOGA project.

Vanadium dioxide

10.1109/icton.2016.7550465

Cite

Citations (1)

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

Nature Materials (2018)

Stefan Abel Felix Eltes J. Elliott Ortmann Andreas Messner Pau Castera

Pockels effect

Barium titanate

Modulation (music)

10.1038/s41563-018-0208-0

Cite

Citations (402)

Silicon 2×2 optical switch based on optimized multimode interference coupler to minimize power consumption

Álvaro Rosa Amadeu Griol Ana M. Gutierrez A. Brimont Pablo Sanchis

Optical switches based on multimode interference (MMI) couplers can reduce footprint and increase tolerance against fabrication deviations. Furthermore, a 50% power consumption reduction has been demonstrated by designing a trenched MMI for thermal isolation without penalizing insertion losses and crosstalk.

Crosstalk

Optical cross-connect

Footprint

10.1109/ecoc.2015.7341729

Cite

Citations (3)

Optimized micro-heater structures for tunable silicon multimode interferometers

Álvaro Rosa A. Brimont Amadeu Griol Pablo Sanchis

Different micro-heaters structures are analyzed and experimentally demonstrated to optimize the thermo-optic tuning performance of silicon MMIs. A 28dB crosstalk with 65 mW power consumption has been achieved for a double meander structure.

Crosstalk

Hybrid silicon laser

10.1109/group4.2014.6962036

Cite

Citations (3)

Alignment tolerant, low voltage, 023 Vcm, push-pull silicon photonic switches based on a vertical pn junction

Optics Express (2019)

Andrea Zanzi Christos Vagionas Amadeu Griol Álvaro Rosa Sergio Lechago

In this paper, we present the design, fabrication and characterization of a carrier depletion silicon-photonic switch based on a highly doped vertical pn junction. The vertical nature of the pn junction enables the device to exhibit a modulation efficiency as high as 0.23 V.cm. Fast switching times of 60ps are achieved in a lumped configuration. Moreover, the process flow is highly tolerant to fabrication deviations allowing a seamless transfer to the 350 nm process node of a commercial complementary-metal-oxide semiconductor (CMOS) foundry. Overall, this work showcases the possibility of fabricating highly efficient carrier depletion-based silicon photonic switches using medium resolution lithography.

p–n junction

10.1364/oe.27.032409

Cite

Citations (12)

Advanced high speed slow-light silicon modulators in the O-band for low power optical interconnects in data centers

Andrea Zanzi Álvaro Rosa Arteaga Oriol Pablo Sanchis J. Martí

This paper presents the design and preliminary results of a low power, compact and high-speed modulator in the O-band featuring apodized slow-light structures and a slow-wave RF design. The device is a candidate for future single mode optical interconnects in large-scale data centers.

Apodization

Burst mode (computing)

10.1109/group4.2017.8082240

Cite

Citations (2)

Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance

Pablo Sanchis Luis Sánchez Pau Castera Álvaro Rosa Ana M. Gutierrez

In this work we will present the objectives and last results of the FP7-ICT-2013-11-619456 SITOGA project. The SITOGA project will address the integration of transition metal dioxides (TMO) materials in silicon photonics and CMOS electronics. TMOs have unique electro-optical properties that will offer unprecedented and novel capabilities to the silicon platform. SITOGA will focus on two disruptive TMO materials, barium titanate (BaTiO ₃ ) and vanadium didioxide (VO ₂ ), for developing advanced photonic integrated devices for a wide range of applications. Innovative integration processes with silicon photonics circuits and CMOS electronics will be developed. The whole technology chain will be validated by two functional demonstrators: a 40 Gbit/s DPSK transceiver and an 8×8 switching matrix with 100 Gbit/s throughput.

Gigabit

Transceiver

10.1109/icton.2014.6876505

Cite

Citations (3)

Hybrid silicon-ferroelectric oxide platform for tunable nanophotonics on silicon

Sébastien Cueff Pau Castera Ana M. Gutierrez Pédro Rojo Romeo R. Orobtchouk

In this communication, we present strategies to implement novel or enhanced optoelectronic functionalities on silicon via the monolithic integration of functional oxides as active layers for nanophotonic devices. We focus on the use of ferroelectric oxides with naturally strong electro-optical coefficients such as BaTiO ₃ (BTO) on SOI for the realization of electro-optical modulators around 1.55 μm. Specifically, we present methods to monolithically integrate monocrystalline BTO on silicon and to design devices that leverage their strong Pockels coefficient for efficient and fast electro-optical modulation. We show preliminary results on the fabrication, process and characterization of a slotted BTO waveguide platform. We further discuss on first electro-optical modulation results and how to improve the current optoelectronic platform. In particular, we will explain the potential origins of optical losses in such systems and how to avoid them.

Nanophotonics

Pockels effect

Modulation (music)

10.1109/icton.2016.7550429

Cite

Citations (1)

Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

Journal of Spectroscopy (2016)

J. Hernández-Torres Angelica Gutiérrez Franco P. González L. García-González T. Hernández-Quiroz

Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated withCNxfilms located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominantDband.ID/IGratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp 2 /sp 3 ratio due to presence of high nitrogen content.

10.1155/2016/5810592

Cite

Citations (10)

Large Vacuum Intervention to Install New BPMs and Radiation Absorbers in the LNLS Electron Storage Ring

Presented at (2010)

Rafael Seraphim Sergio Marques Álvaro Rosa Fernando Henrique Cardoso Marcelo Antônio Pascoal-Xavier

Source

Cite

Citations (1)