Jianlu Wang

University of Chinese Academy of Sciences

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Junhao Chu

Shanghai Institute of Technical Physics

Xudong Wang

Shanghai Institute of Technical Physics

Tie Lin

Shanghai Institute of Technical Physics

Hong Shen

Nanjing Agricultural University

Xiangjian Meng

Shanghai Institute of Technical Physics

Weida Hu

University of Chinese Academy of Sciences

Hai Huang

North China Electric Power University

Guangjian Wu

Institute of Tibetan Plateau Research

Jinglan Sun

Shanghai Institute of Technical Physics

Shuo Sun

Shanghai University

Cooperative Institutions

Chinese Academy of Sciences

Fudan University

University of Chinese Academy of Sciences

Shanghai Institute of Technical Physics

Shandong University

East China Normal University

Shandong First Medical University

Shanghai Institute of Microsystem and Information Technology

Xi'an Jiaotong University

Shandong Provincial Hospital

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Study on preventive and therapeutic effects of combined application of Yindanxinnaotong soft capsule and exercise on atherosclerotic rats

China Journal of Chinese Materia Medica (2014)

Jianlu Wang Lan Wang Long Cheng Xiaojie Yin Haiyu Xu

To explore the prevention effect of the joint combination of Yindanxinnaotong soft capsule (YDXNT) and exercise (swimming) on atherosclerotic rats. The method of 3 x 3 factorial design, including two factors (YDXNT and swimming) and three levels (0, 1, 2 g x kg(-1) YDXNT; 0, 0.5, 1 h swimming), was mainly adopted. The atherosclerotic rat model was established by ligating their left common carotid arteries and feeding high-fat diet. After 8 weeks, blood samples were collected from their thoracic aorta to determine blood viscosity, plasma viscosity, fibrinogen (FIB), nitric oxide (NO), 6-keto-PGF(1alpha) endothelin (ET) and thromboxane B2 (TXB2). The tissues of left common carotid arteries of the rats were collected to detect the positive expression of SM22alpha and determine the semi-quantitation through the immunohistochemical staining. The result showed that the combination of YDXNT and swimming can significantly decrease the plasma viscosity (F = 3.241, P = 0.017), the high and low shear blood viscosity (F = 6.444, P = 0.001; F = 3.002, P = 0.024) and FIB (F = 4.046, P = 0.005). The increased NO and 6-keto-PGF(1alpha) and the decreased ET and TXB2 indicated a significant interaction (P < 0.05). The swimming showed an obvious main effect in the expression of up-regulated protein SM22alpha (F = 8.088, P = 0.001). The study suggested that the combined administration of YDXNT and swimming could improve the hemorheological parameters of atherosclerotic rats, protect the vascular endothelium, inhibit the vascular remodeling in atherosclerosis and positively prevent the atherosclerosis.

Blood stasis

Capsule

Hemorheology

Thoracic aorta

Thromboxane B2

10.4268/cjcmm20141337

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Citations (1)

End-Bonded Contacts of Tellurium Transistors

ACS Applied Materials & Interfaces (2021)

Wei Jiang Xudong Wang Yan Chen Shuaiqin Wu Binmin Wu

The development of novel low-dimensional materials makes the metallic contact to nanostructure facing challenges. Compared to side contacts, end-bonded contacts are proposed to be more effective pathways for charge injection and extraction. However, there is a lack of up-to-date understanding regarding end-bonded contacts, especially the recently emerged high-performance field-effect transistors (FETs). Here, the end-bonded contacts in tellurium (Te) transistors are first achieved by inducing metal semiconductor alloy. The formation of Pd–Te alloy structure is confirmed by a high-resolution transmission electron microscope (HRTEM) in Te-nanorod-based FETs. The ultralow specific contact resistance is estimated to be 5.1 × 10–9 Ω cm2 by the transmission line mode. On the basis of this finding, Te FETs are shown to exhibit incredible electronic properties, metal-insulator transition, and photodetection performance. This in-depth investigation of the end-bonded contact between Pd and Te speeds up the potential application of Te nanostructure and provides a feasible method for contact engineering in advanced devices.

Tellurium

Photodetection

Contact resistance

10.1021/acsami.0c21675

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Citations (15)

Nanometer-Thick Metastable Zinc Blende γ-MnTe Single-Crystalline Films for High-Performance Ultraviolet and Broadband Photodetectors

ACS Applied Nano Materials (2020)

Qin Lian Lisa Zhou Jiyue Zhang Hongzhu Wu Wei Bai

Van der Waals heteroepitaxial (vdWE) has been intensely developed and considered as the most promising heteroepitaxial technique for growth of high-quality nanoscale films, covalent-bonded semiconductor films, and heterostructures to create the next-generation flexible electronic/optoelectronic devices because of its nature of relief of the strict requirement of lattice matching and its elegant exfoliation and transfer to any substrates of interest. However, application of the vdWE route in growing metastable and artificial materials and structures is still absent. In this work, by using the molecular beam epitaxy (MBE), epitaxy of metastable γ-phase nanometer-thick MnTe thin films is achieved on two-dimensional mica substrates through attentive control of its growth kinetics. The good crystallinity of vdWE γ-MnTe thin films is shown by a low half peak width value of about 0.19° for 50 nm-thick epitaxial films. Moreover, a structure with perfect lattice, a wide Egopt of ∼3.26 eV with the direct electron transition structure, a broad absorption region from ultraviolet (UV) to near-infrared (NIR), and an ultrahigh absorption coefficient beyond 106 cm–1 in the UV region are found in vdWE nanometer-thick γ-MnTe thin films. The photodetectors with vdWE γ-MnTe/mica systems exhibit a highly sensitive broadband detecting from the UV to the NIR region. The detectors show an outstanding UV response with a high responsivity of 526 A W–1 and specific detectivity of 2.46 × 1012 Jones and show fast photoresponse speeds (τrising = 1.9 ms and τdecay = 1.7 ms) under a 375 nm laser illumination that indicate a great potential in flexible UV and broad spectrum detection of the photodetectors with vdWE nanometer-thick γ-MnTe/mica.

Ultraviolet

10.1021/acsanm.0c02560

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Citations (10)

Visualizing Band Profiles of Gate-Tunable Junctions in MoS₂/WSe₂ Heterostructure Transistors

ACS Nano (2021)

Xinzuo Sun Yan Chen Zhiwei Li Yu Han Qin Zhou

Heterostructure devices based on two-dimensional materials have been under intensive study due to their intriguing electrical and optical properties. One key factor in understanding these devices is their nanometer-scale band profiles, which is challenging to obtain in devices. Here, we use a technique named contact-mode scanning tunneling spectroscopy to directly visualize the band profiles of MoS2/WSe2 heterostructure devices at different gate voltages with nanometer resolution. The long-held view of a conventional p-n junction in the MoS2/WSe2 heterostructure is reexamined. Due to strong inter- and intralayer charge transfer, the MoS2 layer in contact with WSe2 is found to convert from n-type to p-type, and a series of gate-tunable p-n and p-p+ junctions are developed in the devices. Highly conductive edges are also discovered which could strongly affect the device properties.

Nanometre

10.1021/acsnano.1c05491

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Citations (18)

Computational Fluid Dynamics Analysis Approach to the Aerodynamic Performance of a Nozzle Controlling Stage for a 600MW Steam Turbine

Springer eBooks (2007)

Xin Yan Jun Li Yonghui Xie Zhenping Feng Gangyun Zhong

10.1007/978-3-540-76694-0_263

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Colloidal Quantum Dots in Very-Long-Wave Infrared Detection: Progress, Challenges, and Opportunities

ACS Omega (2023)

Yilu Qin Tianle Guo Jingjing Liu Tie Lin Jianlu Wang

The very long wave infrared (VLWIR) is an electromagnetic wave with a wavelength range of 15–30 μm, which plays an important role in missile defense and weather monitoring. This paper briefly introduces the development of intraband absorption of colloidal quantum dots (CQDs) and investigates the possibility of using CQDs to produce VLWIR detectors. We calculated the detectivity of CQDs for VLWIR. The results show that the detectivity is affected by parameters such as quantum dot size, temperature, electron relaxation time, and distance between quantum dots. The theoretical derivation results, combined with the current development status, show that the detection of VLWIR by CQDs is still in the theoretical stage.

10.1021/acsomega.3c00403

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Citations (5)

A ferroelectric relaxor polymer-enhanced p-type WSe₂transistor

Nanoscale (2017)

Chong Yin Xudong Wang Yan Chen Dan Li Tie Lin

WSe2 has attracted extensive attention for p-FETs due to its air stability and high mobility. However, the Fermi level of WSe2 is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage is always required to achieve a large ON/OFF ratio. Herein, a stable WSe2 p-doping technique of coating using a ferroelectric relaxor polymer P(VDF-TrFE-CFE) is proposed. Unlike other doping methods, P(VDF-TrFE-CFE) not only can modify the Fermi level of WSe2 but can also act as a high-k gate dielectric in an FET. Dramatic enhancement of the field effect hole mobility from 27 to 170 cm2 V-1 s-1 on a six-layer WSe2 FET has been achieved. Moreover, an FET device based on bilayer WSe2 with P(VDF-TrFE-CFE) as the top gate dielectric is fabricated, which exhibits high p-type performance over a low top gate voltage range. Furthermore, low-temperature experiments reveal the influence of the phase transition of P(VDF-TrFE-CFE) on the channel carrier density and mobility. With a decrease in temperature, field effect hole mobility increases and approaches up to 900 cm2 V-1 s-1 at 200 K. The combination of the p-doping and gating with P(VDF-TrFE-CFE) provides a promising solution for obtaining high-performance p-FET with 2D semiconductors.

Electron Mobility

10.1039/c7nr08034d

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Citations (33)

Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer

ACS Applied Materials & Interfaces (2019)

Shili Yan Hai Huang Zhijian Xie Guojun Ye Xiaoxi Li

Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) hold great promise in information storage and processing. However, an often-observed and hard-to-control anti-hysteresis response of 2D-FeFETs, for example, hysteretic switching of the resistance states of the devices opposite to that of the actual polarization of the ferroelectric dielectric, represents a major issue in the industrial applications of such devices. Here, we demonstrate a van der Waals buffer technique that eliminates anti-hysteresis in black phosphorus (BP) 2D-FeFETs and restores their intrinsic hysteretic behavior. Our modified BP 2D-FeFETs showed outstanding performance including high room-temperature carrier mobility, robust bistable states with fast response to a gate, a large on/off ratio at zero gate voltage, a large and considerably more stable memory window, and a long retention time. During repeated gate operation, the memory window of the buffered device is ∼7000 times more stable than the unbuffered device. Such a method could be crucial in future information technological applications that utilize the intrinsic properties of 2D-FeFETs.

Bistability

Non-Volatile Memory

Hysteresis

Buffer (optical fiber)

10.1021/acsami.9b15457

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Citations (10)

Analysis of UWB signal distortion in transmitting/receiving antenna systems

Jianhua Zhang Jianlu Wang Wei Hu

The effects of transmitting and receiving antennas on the ultra-wideband signal waveform are different. The time domain properties of wire antenna were studied. Through the analysis of the transmitting/receiving antenna systems, formulations between feed signal and receiver's output signal were obtained. Distortion of waveform was simulated by using FDTD. Fidelities of different length antennas were also simulated. The results show the fidelity decreases with the antenna's length increasing.

SIGNAL (programming language)

Distortion (music)

10.1109/isape.2010.5696422

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Citations (2)

Reliable nonvolatile memory black phosphorus ferroelectric field effect transistors with van der Waals buffer

Shili Yan Hai Huang Zhijian Xie Guo Ye Xiaoxi Li

Black Phosphorus

Non-Volatile Memory

Buffer (optical fiber)

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Citations (0)