Jie Ma

Beijing Institute of Technology

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Su‐Huai Wei

Affiliated Hospital of Shaanxi University of Chinese Medicine

Lin‐Wang Wang

Institute of Semiconductors

Jianfei Liu

Shaanxi Normal University

Shiwu Gao

Beijing Computational Science Research Center

Darius Kuciauskas

National Renewable Energy Laboratory

Jia Lu

Nantong University

Yugui Yao

Beijing Institute of Technology

Wende Xiao

Beijing Institute of Technology

Mingming Luo

Hebei University of Technology

Xiangye Zeng

Hebei University of Technology

Cooperative Institutions

Beijing Institute of Technology

National Renewable Energy Laboratory

University of California, Berkeley

Chinese Academy of Sciences

Lawrence Berkeley National Laboratory

Colorado School of Mines

Hebei University of Technology

Institute of Physics

Joint Center for Artificial Photosynthesis

University of Chinese Academy of Sciences

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Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations

Nano Research (2019)

Xiangzhuo Wang Huixia Yang Rong Yang Qinsheng Wang Jingchuan Zheng

10.1007/s12274-019-2456-y

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Citations (25)

Lasing in robust cesium lead halide perovskite nanowires

Proceedings of the National Academy of Sciences (2016)

Samuel W. Eaton Minliang Lai Natalie A. Gibson Andrew Barnabas Wong Letian Dou

Significance Nanowire lasers are miniaturized light sources with great potential for integration into optoelectronic circuits. Many of the current nanowire lasers either require extreme conditions for synthesis or suffer from poor operational stability. We synthesize nanowires of a promising set of compositions, the cesium lead halides, and accomplish this under near-ambient conditions. These nanowires act as efficient laser cavities and are capable of lasing with relatively low excitation thresholds. They also demonstrate unprecedented stability for a perovskite-based nanowire laser and offer a new nanoscale platform for future study.

Caesium

10.1073/pnas.1600789113

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Citations (737)

Precoding-enabled OFDM-ROF transmission system with self-pumping structure

Optical Fiber Technology (2022)

Jia Lu Yaqi Hu Jie Ma Jianfei Liu Tianyi Liu

Zero-forcing precoding

10.1016/j.yofte.2022.103039

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Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint

Photovoltaic Specialists Conference (2012)

T. A. Gessert James M. Burst Jie Ma Su‐Huai Wei Darius Kuciauskas

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), more » adding even a small amount of Te may produce detrimental defects. « less

Cadmium telluride photovoltaics

Deposition

Isotropic etching

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Diffusion of Interstitial Defects in CdTe

Bulletin of the American Physical Society (2015)

Su‐Huai Wei Ji‐Hui Yang Jie Ma Joongoo Kang

Cadmium telluride photovoltaics

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Performance Enhancement with Geometrically Shaped 4/8d-Sp-32qam for Ddo-Ofdm System

Jie Ma Rouling Song Jia Lu Jianfei Liu Xiangye Zeng

We design the 4-dimensional set-partitioning 32-ary quadrature amplitude modulation ( 4D-SP-32QAM) and 8D-SP-32QAM in direct detection optical orthogonal frequency division multiplexing (DDO-OFDM) systems. Quadrant multiplexing (QM) and orthant symmetry (OS) are respectively used to increase the minimum Euclidean distance (MED) and reduce the complexity of constellation mapping, while improving system bandwidth utilization. Under the same spectral efficiency (SE) with 8bit/symbol, the proposed 8D-SP-32QAM scheme outperforms 4D-SP-32QAM, 4D-OS-32QAM and 4D 256-ary polarization-ring-switching (4D-256PRS) in terms of generalized mutual information (GMI) and bit error rate (BER) performance at various fiber length. In addition, the GMI gain increases gradually with the increase of fiber length, proving that this scheme can effectively improve system capacity and nonlinear tolerance.

10.2139/ssrn.4624860

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Atomically thin two-dimensional organic-inorganic hybrid perovskites

Science (2015)

Letian Dou Andrew Barnabas Wong Yi Yu Minliang Lai Nikolay Kornienko

Flat perovskite crystals Bulk crystals and thick films of inorganic-organic perovskite materials such as CH 3 NH 3 PbI 3 have shown promise as active material for solar cells. Dou et al. show that thin films—a single unit cell or a few unit cells thick—of a related composition, (C 4 H 9 NH 3 ) 2 PbBr 4 , form squares with edges several micrometers long. These materials exhibit strong and tunable blue photoluminescence. Science , this issue p. 1518

10.1126/science.aac7660

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Citations (1,270)

First principles study on the electronic and optical properties of B-site ordered double perovskite Sr2MMoO6 (M=Mg, Ca, and Zn)

Solid State Communications (2015)

Shuai Zhao Chunfeng Lan Jie Ma Shyam S. Pandey Shuzi Hayase

Density of states

10.1016/j.ssc.2015.04.012

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Citations (33)

Plasmon-Induced Electron–Hole Separation at the Ag/TiO₂(110) Interface

ACS Nano (2019)

Jie Ma Shiwu Gao

Plasmon-induced electron-hole separation at metal-semiconductor interfaces is an essential step in photovoltaics, photochemistry, and optoelectronics. Despite its importance in fundamental understandings and technological applications, the mechanism and dynamics of the charge separation under plasmon excitations have not been well understood. Here, the plasmon-induced charge separation between a Ag20 nanocluster and a TiO2(110) surface is investigated using time-dependent density functional theory simulations. It is found that the charge separation dynamics consists of two processes: during the first 10 fs an initial charge separation resulting from the plasmon-electron coupling at the interface and a subsequent charge redistribution governed by the sloshing motion of the charge-transfer plasmon. The interplay between the two processes determines the charge separation and leads to the inhomogeneous layer-dependent distribution of hot carriers. The hot electrons are more efficient than the hot holes in the charge injection, resulting in the charge separation. Over 40% of the hot electron-hole pairs are separated spatially from the interface. Finally, the second TiO2 layer receives the most net charges from the Ag nanocluster rather than the interfacial layer. These results reveal the mechanism and dynamics of the charge separation driven by the surface plasmon excitation and have broad implications in plasmonic applications.

Interface (matter)

10.1021/acsnano.9b03555

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Citations (60)

Tunable electron and hole injection channels at plasmonic Al–TiO₂ interfaces

Nanoscale (2021)

Jie Ma Xindan Zhang Shiwu Gao

As the size of the Al nanocluster increases, the plasmon redshifts in energy, and the charge transfer is tuned from a net hole to a net electron transfer.

10.1039/d1nr03697a

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Citations (6)