Xianhua Wei

Southwest University of Science and Technology

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Jianhua Hao

Hong Kong Polytechnic University

Huizhong Zeng

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chao Yang

Shanghai University

Xin-Cai Yuan

Southwest University of Science and Technology

Yanrong Li

University of Electronic Science and Technology of China

Bingjie Zhong

Southwest University of Science and Technology

Chengyang Zuo

Panzhihua University

Bo Dai

Southwest University of Science and Technology

Shuo Li

Changji University

Chuanhui Gong

Nantong University

Cooperative Institutions

Southwest University of Science and Technology

University of Electronic Science and Technology of China

National Engineering Research Center of Electromagnetic Radiation Control Materials

Hunan University

Chinese Academy of Sciences

Hong Kong Polytechnic University

Chengdu University

Central South University

Zhengzhou University

Peking University

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Bipolar resistive switching behavior with high ON/OFF ratio of Co:BaTiO3 films by acceptor doping

Applied Physics Letters (2013)

Shuo Li Huizhong Zeng S. Y. Zhang Xianhua Wei

The bipolar resistive switching characteristics have been investigated in the Co:BaTiO3 films deposited by sol-gel method. It has been demonstrated that such devices can be used as resistive random access memory cells without required electroforming. Ohmic transport and space charge limited current mechanism are dominant during the resistive switching. The ON/OFF ratio between the resistance at the high and low resistance states is more than 106, better than other perovskite films. The high ratio should be attributed to acceptor doping into the n-type semiconductor. The results imply that the ON/OFF ratio can be enhanced by controlling doping type and concentration in those insulating oxides.

Electroforming

Acceptor

Ohmic contact

10.1063/1.4802209

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Citations (38)

Disappearance and recovery of colossal permittivity in (Nb+Mn) co-doped TiO2

Ceramics International (2018)

Chao Yang Xianhua Wei Jianhua Hao

10.1016/j.ceramint.2018.04.028

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Citations (48)

Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

Applied Physics Letters (2007)

Xianhua Wei Yanrong Li Jun Zhu Wei Huang Y. Zhang

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)-, (011)-, and (111)-orientated SrTiO3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO3(001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110)‖SrTiO3(001) and ZnO[−111]‖SrTiO3⟨100⟩. For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110]‖SrTiO3[110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO3(111) was better than that of ZnO on SrTiO3(011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films.

Pulsed Laser Deposition

10.1063/1.2719026

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Citations (66)

Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure

Nanoscale Research Letters (2014)

Xin-Cai Yuan Jinlong Tang Huizhong Zeng Xianhua Wei

Abstract This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications.

Electroforming

Non-blocking I/O

Indium tin oxide

Nanochemistry

10.1186/1556-276x-9-268

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Citations (33)

Generation of DNA Aptamers with Functional Activity in Mammalian Cells by Mimicking Retroviruses

Analytical Chemistry (2023)

Neng Ling Huiming Liu Junxiao Guo Zhouliang Liang Yibin Zhang

DNA aptamers are single-stranded DNA oligonucleotide sequences that bind to specific targets with high affinity. Currently, DNA aptamers can be produced only by in vitro synthesis. It is difficult for DNA aptamers to have a sustained impact on intracellular protein activity, which limits their clinical application. In this study, we developed a DNA aptamer expression system to generate DNA aptamers with functional activity in mammalian cells by mimicking retroviruses. Using this system, DNA aptamers targeting intracellular Ras (Ra1) and membrane-bound CD71 (XQ2) were successfully generated in cells. In particular, the expressed Ra1 not only specifically bound to the intracellular Ras protein but also inhibited the phosphorylation of downstream ERK1/2 and AKT. Furthermore, by inserting the DNA aptamer expression system for Ra1 into a lentivirus vector, the system can be delivered into cells and stably produce Ra1 over time, resulting in the inhibition of lung cancer cell proliferation. Therefore, our study provides a novel strategy for the intracellular generation of DNA aptamers with functional activity and opens a new avenue for the clinical application of intracellular DNA aptamers in disease treatment.

Aptamer

10.1021/acs.analchem.3c00387

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Citations (1)

Crystal structure of pSLA-1*0401 complex with dodecapeptide RVEDVTNTAEYW

Xianhua Wei Shuangshuang Shuangshuang Wang N.Z. Zhang Changkun Xia

Crystal (programming language)

10.2210/pdb6lf8/pdb

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Citations (0)

Point contact resistive switching memory based on self-formed interface of Al/ITO

Scientific Reports (2016)

Qiuhong Li Linjun Qiu Xianhua Wei Bo Dai Huizhong Zeng

Abstract Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

Electroforming

Indium tin oxide

Resistive touchscreen

10.1038/srep29347

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Citations (26)

The effect of sintering atmosphere on colossal permittivity in W+Mg/Al co-doped TiO2 ceramics

Ceramics International (2019)

Chao Yang Bingjie Zhong Zhongmin Long Xianhua Wei

Reducing atmosphere

Rutile

10.1016/j.ceramint.2019.10.054

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Citations (22)

Growth dynamics and cell migration in ferroelectric thin films

Applied Physics Letters (2006)

Yan Rong Li Jinlong Li Jun Zhu Ying Zhang Hui Zhong Zeng

Growth dynamics and unit cell migration of ferroelectric (Ba,Sr)TiO3 thin films were systematically studied with in situ reflective high-energy electron diffraction and atom force microscopy. By measuring the amplitudes of slow surface recovery oscillations of SrTiO3 film grown on (001) SrTiO3 surface, the activation energy of unit cell surface self-diffusion was surprisingly found to be only 0.29±0.01eV. A “unit-cell migration” model was developed to understand the epitaxial growth dynamics of ferroelectric thin films, which is a critical issue in oxide thin film growth and crucial in controlling the atomic structures.

Surface diffusion

10.1063/1.2171478

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Citations (6)

Interfacial and rectifying characteristic of epitaxial SrTiO3-δ/GaAs p–n junctions

Scripta Materialia (2011)

Xianhua Wei Wen Huang Zhibin Yang Jianhua Hao

10.1016/j.scriptamat.2011.04.035

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Citations (15)