Jun Du

General Research Institute for Nonferrous Metals (China)

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Feng Wei

General Research Institute for Nonferrous Metals (China)

Hailing Tu

General Research Institute for Nonferrous Metals (China)

Yuhua Xiong

General Research Institute for Nonferrous Metals (China)

Hongbin Zhao

Shanghai University

Qun Tang

Nanchang University

Qingmeng Zhang

Qilu Hospital of Shandong University

Xinqiang Zhang

Affiliated Hospital of Chengde Medical College

Zhimin Yang

General Research Institute for Nonferrous Metals (China)

Hao Zhou

Hangzhou Dianzi University

Mengmeng Yang

South China Normal University

Cooperative Institutions

General Research Institute for Nonferrous Metals (China)

Chinese Academy of Sciences

Grinm Advanced Materials (China)

Shandong University

University of Chinese Academy of Sciences

Institute of Microelectronics

State Key Laboratory of Advanced Materials for Smart Sensing

Tsinghua University

Xi'an Jiaotong University

Sun Yat-sen University

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Atomistic Insights into the Ionic Response and Mechanism of Antifouling Zwitterionic Polymer Brushes (Small 6/2025)

Small (2025)

Xinzhong Song Jia Man X Y Zhang Jiali Wang Yongqi Zhang

Biofouling

10.1002/smll.202570043

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Effect of the Difference in Dielectric Constant of the Phases on Dielectric Property of the Composites

Materials science forum (2015)

Hao Zhou Qing Meng Zhang Qun Tang Hang Cui Yao Xu

The composites have a great use in practical application. In common, the phases in composite have different relative dielectric constant and in order to reveal how the phases with different permittivity affect the composite’s dielectric properties, the experiments were carried out using inorganic and organic composite with different dielectric constant phases to make that clear. The barium niobate-based SiO 2 system glass–ceramic and fillers-epoxy resin composites were chosen, and the dielectric properties were tested to compare the difference of those composites. The results show that the existence of high dielectric constant phases in composites can improve the permittivity of composites and make the composites present ferroelectric properties, while the dielectric loss can also increased, and the difference in dielectric constant of the phases can decrease the dielectric breakdown strength.

Barium titanate

Dielectric loss

High-κ dielectric

10.4028/www.scientific.net/msf.814.137

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Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

Journal of Rare Earths (2010)

Mei Ji Lei Wang Yuhua Xiong Jun Du

Equivalent oxide thickness

Electronegativity

Leakage (economics)

High-κ dielectric

10.1016/s1002-0721(09)60119-8

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Citations (14)

Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Journal of Rare Earths (2013)

Mengmeng Yang Hailing Tu Jun Du Feng Wei Yuhua Xiong

Stoichiometry

10.1016/s1002-0721(12)60293-2

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Citations (13)

Effect of Al2O3 additive on the dielectric properties of PbO-SrO-Na2O-Nb2O5-SiO2 glass-ceramic

CRC Press eBooks (2015)

Hao Zhou Qingmeng Zhang Qun Tang Hang Cui Yaohua Xu

10.1201/b19126-504

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Research on Dielectric Properties of AlN-Mo Composite Ceramics

Cailiao daobao (2008)

Jun Du

Spark Plasma Sintering

Volume fraction

Percolation (cognitive psychology)

High-κ dielectric

Dielectric loss

Source

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Citations (1)

Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large Areas

The Journal of Physical Chemistry C (2013)

Xi Wan Kun Chen Jun Du Danqing Liu Jian Chen

The performance of graphene field effect transistors (GFETs) strongly depends on the interface between graphene sheets and the underlying substrates. In this work, we report that an octadecyltrimethoxysilane (OTMS) SAM modified conventional SiO2/Si substrate can consistently enhance the performance of coronene-derived large-area graphene FETs. The improved transport properties in terms of boosted carrier mobility (up to 10 700 ± 300 cm2 V–1 s–1), long mean free path, nearly vanished hysteretic behavior, and remarkably low intrinsic doping level are mainly attributed to the strong suppression of interfacial charge impurity scattering and remote interfacial phonon (RIP) scattering, less adsorption of dipolar adsorbates, and the attenuated charger transfer at the interface of graphene and dielectric. The intrinsic doping levels (the Fermi energy) of graphene on OTMS-modified and bare SiO2 have been quantitatively estimated and confirmed by the Dirac points of GFETs, the Raman mapping of G-peak positions, and the surface potential maps by KPFM. The facile fabrication of a graphene device over a large area provides an unprecedented combination of high performance and low cost for the future application of all carbon-based nanoelectronics.

10.1021/jp309549z

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Citations (29)

Energy band alignment of HfO2 on p-type (100)InP

Rare Metals (2014)

Mengmeng Yang Hailing Tu Jun Du Feng Wei Yuhua Xiong

10.1007/s12598-014-0348-6

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Citations (6)

Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Applied Physics Letters (2011)

Xinqiang Zhang Hailing Tu Hongbin Zhao Mengmeng Yang Xiaona Wang

We first reported the hetero-epitaxial growth with good lattice matching of cubic structure La2O3 dielectric ultra-thin films on InP substrates by PLD. Epitaxial relationship between the La2O3 film and InP substrate, namely [001]La2O3||[001]InP and [012]La2O3||[012]InP, and cross-section of the stack without interface layer have been revealed by RHEED and HRTEM. The band offset for La2O3/InP is evaluated to be 1.62 eV for valence band and 2.61 eV for conduction band by XPS. A leakage current of 2 × 10−4 A/cm2 at bias voltage of −1 V and small equivalent oxide thickness of 0.3 nm have been measured on the capacitors with W/La2O3/InP/Al stack.

Band offset

10.1063/1.3643470

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Citations (14)

Characteristics and mechanism of nano‐polycrystalline La₂O₃ thin‐film resistance switching memory

physica status solidi (RRL) - Rapid Research Letters (2013)

Hongbin Zhao Hailing Tu Feng Wei Yuhua Xiong Xinqaing Zhang

Abstract We investigated the characteristics and the mechanism of Pt/La 2 O 3 /Pt resistance switching memory with a set of measurements. The La 2 O 3 films were determined as nano‐poly‐crystalline (diameter of the nanocrystals 5–10 nm) by XRD and HRTEM analysis. The Pt/La 2 O 3 /Pt device exhibited excellent resistive switching properties, including low switching voltage (<2 V), large low/high resistance ratio (>10 8 ), and good cycling endurance property. The conduction mecha‐ nisms of the Pt/La 2 O 3 /Pt device were revealed with current–voltage characteristics, which are different in the low and high resistance states. Furthermore, XPS analysis and temperature‐dependent resistance measurement in the low resistance state showed that the conducting filaments in the Pt/La 2 O 3 /Pt device are mainly affected by oxygen defects rather than metallic La. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

10.1002/pssr.201308068

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Citations (27)