Sung Kyu Kim

Korea Institute of Industrial Technology

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i-10 index

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Sung‐Yool Choi

Korea Advanced Institute of Science and Technology

Hu Young Jeong

Ulsan National Institute of Science and Technology

Jeong Yong Lee

Korea Institute of Machinery and Materials

Byung Chul Jang

Kyungpook National University

Bruno C. De Cooman

Pohang University of Science and Technology

Sang Yoon Yang

Korea Advanced Institute of Science and Technology

Jung Eek Son

Seoul National University

Sung Gap Im

Korea Advanced Institute of Science and Technology

Jin Kie Shim

Korea Institute of Industrial Technology

DongHo Kang

Korea Institute of Industrial Technology

Cooperative Institutions

Korea Advanced Institute of Science and Technology

Pohang University of Science and Technology

Government of the Republic of Korea

Korea University

Seoul National University

Pusan National University

Hanyang University

Chung-Ang University

Sungkyunkwan University

Samsung (South Korea)

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Correlation of Yield Ratio with Materials Constants of Constitutive Equation

Materials science forum (2005)

Young‐Min Kim Sung Kyu Kim Nack J. Kim

10.4028/0-87849-960-1.289

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Citations (1)

Selective Oxidation and Sub-Surface Phase Transformation during Austenitic Annealing of TWIP Steels

Materials science forum (2010)

Yong Feng Gong Han-Soo Kim Sung Kyu Kim Bruno C. De Cooman

The selective oxidation of Al-free and Al-added Twinning Induced Plasticity (TWIP) steels during full austenitic annealing at 800°C in N2+10%H2 atmosphere at a dew point of -17°C was investigated by means of HR-TEM of FIB cross-sectional samples. For Al-free TWIP steel, a dense MnO layer was formed on the surface. Crystalline c-xMnO.SiO2(x2) particles and amorphous a-xMnO.SiO2(x<0.9) particles were found at the MnO layer/steel matrix interface. In the subsurface, Mn depletion resulted in the transformation of the austenite to the ferrite phase in a narrow zone. For Al-added TWIP steel, a continuous outer MnO layer and a transition layer consisting of amorphous a-xMnO.SiO2(x<0.9) and crystalline c-MnO.Al2O3(0.8<x<1.2) were formed. The interface between the a-xMnO.SiO2(x<0.9) and c-MnO.Al2O3(0.8<x<1.2) layers had rough structure and 20~50nm diameter voids were formed at the interface. Meanwhile, a narrow Mn-depleted ferrite layer was also formed in the subsurface. The void formation is very likely related to Kirkendall effect occurring during the oxides formation. The thick MnO layer and the voids constitute major challenges to the successful hot dip galvanization of TWIP steels in industrial HDG lines.

Twip

TRIP steel

10.4028/www.scientific.net/msf.654-656.258

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Citations (9)

Estimation of Evaporation from Culture Bed and Water Absorption by Pot using Electrical Conductivity in Wick Culture

한국원예학회 학술발표요지 (2004)

Sung Kyu Kim Jung Eek Son Dong Ho Jung

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Moisture Prediction and Control of Growing Media in Closed Transplant Production System

한국원예학회 학술발표요지 (2007)

Sung Bong Oh Hyun Jun Park Yong Kyo Jung Nguyen Huy Tai Sung Kyu Kim

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Citations (0)

Temperature effect on twin formation kinetics and deformation behavior of Fe-18Mn-0.6C TWIP steel

Metals and Materials International (2014)

Joong Eun Jung Junho Park Jungsu Kim Jong Bae Jeon Sung Kyu Kim

Twip

Stacking-fault energy

Ductility (Earth science)

Elongation

Deformation mechanism

10.1007/s12540-014-1008-y

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Citations (59)

Flexible Memristive Memory Array on Plastic Substrates

Nano Letters (2011)

Seungjun Kim Hu Young Jeong Sung Kyu Kim Sung‐Yool Choi Keon Jae Lee

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has recently increased due to their advantages over present rigid electronic systems. Flexible memory is an essential part of electronic systems for data processing, storage, and communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor–one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. The work presented here can provide a new approach to high-performance nonvolatile memory for flexible electronic applications.

Non-Volatile Memory

Memristor

Non-volatile random-access memory

Neuromorphic engineering

10.1021/nl203206h

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Citations (257)

Radition effect on colony formation of hela.S3(SC) cell line

Yeungnam University Journal of Medicine (1993)

Sei One Shin Sung Kyu Kim Myung Se Kim

Since discovery of X-rays, radiotherapy has evolved into one of the most scientific branches of medicine and has established its role as the primary line or the secondary line of attack, after surgery, in the treatment of malignant cancers. Nowadays its importance is illustrated by the fact that as many as 70 per cent of all pastients with cancer will receive radiation therapy at sometime during their disease process. Biologic effects of X-rays began to be apparant soon after the discovery by Roentgen in 1895. In clinical radiotherapy, the biologic endpoint of most importance is loss of cellular reproductive ability or clonogenicity. One of the commonest ways to assess cell survival is to use an in vitro plating assay. We analyzed radiation effect on colony formation of HaLa.S3(SC) cell line and obtained results are as follows: The plating efficiency is 0.464. The shape of cell survival curve is similar to multi-target plus single hit component model. Estimated values of Do, Dq, and extrapolation number are 150 cGy, 80 cGy and 1.7 respectively. We reported these experimental data with review of literature.

HeLa

Line (geometry)

10.12701/yujm.1993.10.1.212

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Citations (0)

Correlation of Yield Ratio with Materials Constants of Constitutive Equation

Materials science forum (2005)

Young‐Min Kim Sung Kyu Kim Nack J. Kim

The yield ratio of various HSLA steels has been correlated with the materials constants of Swift equation. It has been shown that the materials constants, b and N, of Swift equation can be related to microstructural features such as the dislocation density and volume fraction of constituent phases. In particular, the constant b can be expressed as a function of volume fraction of constituent phases. It has also been shown that the yield ratio has a linear relationship with ln(b/N2). Since the microstructural features often have opposing effects on the values of b and N, careful control of microstructure is necessary to optimize the yield ratio and other properties. The possible way of decreasing the yield ratio without sacrificing other properties of HSLA steels is suggested based on the relationship between yield ratio and the materials constants of Swift equations.

Volume fraction

Constant (computer programming)

Aspect ratio (aeronautics)

Surface-area-to-volume ratio

10.4028/www.scientific.net/msf.475-479.289

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Citations (12)

Chemical Compositions and Antioxidative Activity of Leek ( Allium tuberusum ) Seeds

한국생명과학회 학술발표회 (2000)

Jae Young Sung Kyu Kim Hyun Jeong Kim Young Su Cho

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