Journal Article High Resolution Tem Observation and Eels Analysis of Carbon Nanotubes at Elevated Temperatures Get access T Yaguchi, T Yaguchi Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504 Japan Search for other works by this author on: Oxford Academic Google Scholar T Sato, T Sato Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504 Japan Search for other works by this author on: Oxford Academic Google Scholar T Kamino, T Kamino Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504 Japan Search for other works by this author on: Oxford Academic Google Scholar T Hashimoto, T Hashimoto Hitachi High-technologies cooperation, 882 Ichige, Hitachinaka, Ibaraki, 312-8504 Japan Search for other works by this author on: Oxford Academic Google Scholar K Motomiya, K Motomiya Dept. of Geoscience and Technology, Tohoku Univ., Sendai, 980-8579, Japan Search for other works by this author on: Oxford Academic Google Scholar K Tohji, K Tohji Dept. of Geoscience and Technology, Tohoku Univ., Sendai, 980-8579, Japan Search for other works by this author on: Oxford Academic Google Scholar A Kasuya A Kasuya Center for Interdisciplinary Research, Tohoku Univ., Sendai, 980-8578, Japan Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 8, Issue S02, 1 August 2002, Pages 1152–1153, https://doi.org/10.1017/S1431927602103837 Published: 01 August 2002
Mobile filters are required to process increasing RF power levels, driven by the need for higher data-rates and improved cell-edge coverage. This results in more demanding filter specifications for loss, rejection, isolation, linearity and reliability, while, at the same time, handset OEMs require smaller filter footprints.
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Basal plane dislocation (BPD) with dislocation lines in shallow areas near the surface in 4H-SiC epitaxial wafer was observed by mirror projection electron microscopy (MPJ) and low-energy scanning electron microscopy (LE-SEM). A contrast of dislocation line of BPD appeared in a MPJ observation as gradually weakened dark line toward the upper stream of offcut of wafer, and the contrast almost agreed with the LE-SEM image taken at the same BPD by not a morphology-sensitive imaging method but a potential-sensitive imaging method. Thus an origin of the contrast corresponding to BPD in MPJ is considered to surface potential change due to charging on dislocation line. MPJ observation can gives a BPD image with same quality as a potential-sensitive image by LE-SEM, in extremely short time and damage-and contamination-free condition at no electron irradiation on wafer.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTPressure-volume-temperature-composition (PVTx) properties of the binary 1,1-difluoroethane + 1,1,2,2-tetrafluoroethane systemTakeshi Tamatsu, Takahiro Sato, Haruki Sato, and Koichi WatanabeCite this: J. Chem. Eng. Data 1992, 37, 4, 512–515Publication Date (Print):October 1, 1992Publication History Published online1 May 2002Published inissue 1 October 1992https://pubs.acs.org/doi/10.1021/je00008a032https://doi.org/10.1021/je00008a032research-articleACS PublicationsRequest reuse permissionsArticle Views44Altmetric-Citations3LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose Get e-Alerts
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