A comprehensive study on plasma-process-induced damage (P2ID) in sputtered TiN metal-gated devices with 4 nm N 2 O-nitrided oxide was performed. We found that the TiN metal-gated devices exhibit a significant 8 Å reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the postannealing step. We also found that the postdeposition rapid thermal annealing (RTA) temperature affects both the flat-band voltage ( V fb ) and the interface state density ( D it ). Furthermore, degradation in the gate-oxide integrity caused by severe charging damage by the additional plasma processes in the TiN metal gate process flow was also observed. The P2ID leads to significant degradation in the charge-to-breakdown and a gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N 2 plasma posttreatment was proposed as an effective method for suppressing the gate leakage current.
The combined effects of N 2 -implantation at S/D extension and N 2 O oxide on 0.18 µm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N 2 O oxide or N 2 -implantation. However, for p-channel transistors, opposite trends are observed for N 2 O oxide and N 2 -implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N 2 O oxide and N 2 -implantation.
High-performance Au/Ti/Ge/Pd ohmic contacts on n + -In 0.5 Ga 0.5 P have been fabricated for the first time. Using an n + -In 0.5 Ga 0.5 P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2×10 18 cm -3 , the minimum specific contact resistivity is as low as 1.2×10 -5 Ω·cm 2 , which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In 0.5 Ga 0.5 P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.
We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675 °C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications.
Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1×1013 cm-2 along with an enhanced mobility of 2100 cm2/Vs at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.
We have studied the thermochemical characteristics of ZrOx(Ny)∕Ge and Si interfaces by employing postdeposition annealing. We found that Ge oxide species severely desorbed from the inherent interfacial layer, which was speculated to retard the formation of Zr germanate during high-temperature processing. These unique features enable ZrOx(Ny)∕Ge gate stack to show a better equivalent-oxide-thickness scalability as compared to ZrOx(Ny)∕Si gate stack. However, the volatilization of GeOx-contained interfacial layer also caused the formation of small pits and/or holes in the overlying ZrOx(Ny) gate dielectrics, which was expected to cause deterioration in the electrical properties of fabricated high-k∕Ge devices.
This item is part of: Boarin, P., Haarhoff, E., Manfredini,
M., Mohammadzadeh, M., Premier, A., (2021). Rethinking Sustainable Pacific Rim
Territories. Proceedings of the 2020 APRU Sustainable Cities and Landscapes Hub
PhD Symposium, Future Cities Research Hub, School of Architecture and Planning
of the University of Auckland. ISBN: 978-0-473-53616-9ABSTRACTPeople release stress in urban environments by experiencing green areas, such as parks, grasslands, and areas with trees and hedges. For over 30 years, increasing studies have depicted the psychological and physiological health benefits of experiencing nature. However, recently, people have been staying in concrete environments without green spaces in their daily lives, especially during the COVID-19 pandemic, not only causing social isolation but also contributing to health problems. Biophilic attributes in built environments might improve people’s connection to nature and provide health benefits and influence landscape design applications. To confirm this, the present study took photos in urban green spaces and imported them into Google Vision AI to label their biophilic attributes and to predict the tradition environmental Qi in the space. The study found that natural labels, such as “tree, plant, grass, and park” significantly influenced people’s preference for a space, its tradition environmental qi, and people’s experiences of recovery and reflection. However, urban labels, such as “building, architecture, city, and house” were significantly negatively related to the same psychological outcomes. Using AI to define biophilic labels could optimize the psychological benefits of designed spaces and provide a new view for related landscape design work.
In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.
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