As the demand for advanced semiconductor packaging technology continues to rise, achieving precise control of the wafer bonding process becomes increasingly critical for optimal performance. This research paper focuses on the development of a fine-pitch hybrid wafer bonding technique specifically designed for heterogeneous integration applications. The objective is to enable high-density interconnections and enhance electrical performance through the bonding of Cu and SiO 2 wafers featuring 15μm spaced Cu pads. The experimental section provides a comprehensive account of the study, covering various aspects such as layout design, preparation, and the bonding process. This includes the fabrication of Cu pads and SiO 2 passivation layers, chemical mechanical polishing (CMP), and alignment bonding. Furthermore, the research also investigates Cu-Cu die-to-die bonding utilizing a (100)-oriented single-crystal Cu top die paired with a Si substrate. Microstructure analysis demonstrates a well-fused bonding interface characterized by a highly preferred (100)-oriented Cu film. The insights obtained from this study contribute to the advancement of wafer-level hybrid bonding techniques for three-dimensional integration technology. This research serves as a valuable contribution to the ongoing development and refinement of advanced semiconductor packaging methods.
With the development of electronic technology, the application of electronic control system (CS) in automobile is more and more, especially the dynamic CS. As a typical dynamic CS, ESC not only plays a key role in the field of active safety, but also is the key executive layer of intelligent driving system. Vehicle state parameters are the basis of ESC control and have a direct impact on the intervention effect of ESC related functions. From the cost of engineering application, a considerable part of the state parameters can not be directly measured by sensors. Therefore, the real-time and accurate estimation of state parameters becomes the key to limit the industrial application of ESC. At present, the key technology has not been mastered in the research and industrial application of ESC control in China, which makes the developed ESC products difficult to meet the needs of industrialization. This paper mainly studies the automotive engineering(AE) CS. Through the analysis of the ESC dynamics CS, we can understand the functional modules of the dynamics CS, and elaborate the control scheme of the ESC dynamics CS. We also study the vehicle yaw rate algorithm and analyze the vehicle yaw steering wheel angle and speed by chart analysis method. The experimental results show that the natural frequency of vehicle yaw is generally between 0.5Hz and 0.7hz. Compared with the single sinusoidal input test, the steering wheel angle required to excite the vehicle yaw rate response is smaller in the sinusoidal stagnation test. At 0.5Hz, the sinusoidal stagnation test needs to swing 130 degrees, while the single sinusoidal input test needs to swing 200 degrees.
Efficient heat dissipation is a critical consideration in the design of high-performance electronics packaging. However, the current die-attach techniques suffer from low thermal boundary conductance (TBC) at bonding interfaces, leading to a significant temperature rise during operation. This study examines a Cu-Cu bonding technique that achieves a low thermal budget of 150 °C while simultaneously achieving an ultra-high TBC by coating Ti/Au nanolayers. The overall TBC values measured for the bonded Si-Si and Si-Al2O3 interfaces were 41.49 and 34.13 MW/m2·K, respectively. These results represent a significant enhancement, by 1 to 2 orders of magnitude, compared to industry-standard die-attach technologies such as soldering and Ag-sintering. Microstructural analysis offers valuable insights into the bonding mechanism, demonstrating the diffusion of Cu atoms through the Ti/Au layers into the bonding interface, resulting in the formation of a void-free CuAu interlayer. This interlayer significantly contributes to the improved TBC and overall bond quality. This development holds the potential to enhance heat dissipation in electronic packaging significantly.
The green ratio model of Webster ignores the difference of traffic flow in different traffic state. The paper introduces an idea of traffic priority. It deals out more green time for the phase which has the highest traffic demand in oversaturated traffic, so as to prevent and clear off the crowded traffic flow as soon as possible. Each phase gets the priority by turns, so the improved green ratio model can realize the goal of preventing traffic congestion and clearing off traffic blockage quickly. It is more effective than the Webster's one in dealing with oversaturated traffic flow by simulating experiment based on VISSIM. And when vehicle arrival rate of each phase varies much, the improvement is obviously more.
Efficient heat dissipation is a critical consideration in the design of high-performance electronics packaging. However, the current die-attach techniques suffer from low thermal boundary conductance (TBC) at bonding interfaces, leading to a significant temperature rise during operation. This study examines a Cu-Cu bonding technique that achieves a low thermal budget of 150 °C while simultaneously achieving an ultra-high TBC by coating Ti/Au nanolayers and Ar plasma bombardment. The overall TBC values measured for the bonded Si-Si and Si-Al2O3 interfaces were 41.49 and 34.13 MW/m²·K, respectively. These results represent a significant enhancement, by 1 to 2 orders of magnitude, compared to industry-standard die-attach technologies such as soldering and Ag-sintering. Microstructural analysis offers valuable insights into the bonding mechanism, demonstrating the diffusion of Cu atoms through the distinct Ti grain boundaries into the bonding interface, resulting in the formation of a void-free CuAu interlayer. This interlayer significantly contributes to the improved TBC and overall bond quality. This development holds the potential to enhance heat dissipation in electronic packaging significantly.
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