Po‐Chun Yang

National Cheng Kung University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Ting‐Chang Chang

National Sun Yat-sen University

Jheng-Jie Huang

National Sun Yat-sen University

Dershin Gan

National Sun Yat-sen University

Yuting Chen

Yangzhou University

Hui‐Chun Huang

National Sun Yat-sen University

Ming‐Jinn Tsai

University of Brawijaya

Shih-Ching Chen

Taipei Medical University

Ann‐Kuo Chu

National Sun Yat-sen University

Hsueh-Chih Tseng

National Sun Yat-sen University

New‐Jin Ho

National Sun Yat-sen University

Cooperative Institutions

National Cheng Kung University

National Sun Yat-sen University

National Taiwan University

University of California, Los Angeles

National Yang Ming Chiao Tung University

National Tsing Hua University

Feng Chia University

National Formosa University

Far East University

National Chin-Yi University of Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

CCDC 2119691: Experimental Crystal Structure Determination

The Cambridge Structural Database (2022)

Po‐Chun Yang Kuan-Po Yu Chi-Tien Hsieh Junjie Zou Chia-Te Fang

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

10.5517/ccdc.csd.cc294q4b

Cite

Citations (0)

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

Applied Physics Letters (2011)

Hsueh-Chih Tseng Ting‐Chang Chang Jheng-Jie Huang Po‐Chun Yang Yuting Chen

This paper investigates the improvement of resistive switching trends after post-forming negative bias stress treatment of a Pt/Yb2O3/TiN device that has undergone positive bias forming process for activation. After the treatment, characteristics of the conductive filament, such as the temperature dependence of resistivity and transition mechanism, undergo changes. Furthermore, this treatment causes the conductive filament to transform from being primarily composed of vacancies to being metallic Yb dominant, which not only reduces operation voltages such as Vset and Vreset but also improves the on/off ratio. In reliability tests, the device has stable retention.

Resistive touchscreen

Biasing

10.1063/1.3645004

Cite

Citations (20)

Synthesis of Multisubstituted 1,2,3-Triazoles: Regioselective Formation and Reaction Mechanism

The Journal of Organic Chemistry (2024)

Tzu-Ching Chi Po‐Chun Yang Shao-Kang Hung Hui‐Wen Wu Hong-Chi Wang

A synthetically useful approach to functionalized triazoles is described via the reaction of β-carbonyl phosphonates and azides. 1,4- and 1,5-disubstituted and 1,4,5-trisubstituted triazoles can be regio- and chemoselectively accessed under mild conditions in good to excellent yields (31 examples, up to 99%). A mechanism is proposed that rationalizes the avoidance of the 4-phosphonate byproducts, which is aligned with crystallographic and experimental evidence.

Phosphonate

Reaction conditions

10.1021/acs.joc.3c02836

Cite

Citations (4)

Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer

Thin Solid Films (2012)

Jheng-Jie Huang Ting‐Chang Chang Po‐Chun Yang Yuting Chen Hsueh-Chih Tseng

10.1016/j.tsf.2012.10.096

Cite

Citations (8)

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

Thin Solid Films (2011)

Hsueh-Chih Tseng Ting‐Chang Chang Jheng-Jie Huang Yuting Chen Po‐Chun Yang

Ytterbium

Non-Volatile Memory

Resistive touchscreen

10.1016/j.tsf.2011.07.026

Cite

Citations (12)

Formation of CoSi2/CoSixNy Nanocrystals for Nonvolatile Memory Application

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2012)

Jheng-Jie Huang Ting‐Chang Chang Jin Lu Shih-Ching Chen Tzu-Chia Liu

Abstract not Available.

Non-Volatile Memory

10.1149/ma2012-01/16/715

Cite

Citations (0)

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

Applied Physics Letters (2013)

Yuting Chen Ting‐Chang Chang Jheng-Jie Huang Hsueh-Chih Tseng Po‐Chun Yang

This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2.

Switching time

Molybdenum oxide

10.1063/1.4790277

Cite

Citations (18)

A Linear Two‐Coordinate Cr(II) Complex: Synthesis, Characterization, and Reactivity

Chemistry - An Asian Journal (2023)

K. W. Hsiao Po‐Chun Yang Chia‐Te Fang Hsin‐Kuan Liu Chun‐Yi Lin

The synthesis and characterization of a linear two-coordinate Cr(II) amido complex, Cr{N(

Reactivity

Molar ratio

10.1002/asia.202300924

Cite

Citations (0)

Resistive switching characteristics of gallium oxide for nonvolatile memory application

Thin Solid Films (2012)

Jyun-Bao Yang Ting‐Chang Chang Jheng-Jie Huang Shih-Ching Chen Po‐Chun Yang

Non-Volatile Memory

Tin oxide

Resistive touchscreen

10.1016/j.tsf.2012.10.026

Cite

Citations (36)

Carbon-Laminated Silicon/Graphene Composite Anodes with Improved Capacity and Cycling Stability

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2016)

Kuo‐Feng Chiu Hoang‐Jyh Leu Shih-Hsuan Su Po‐Chun Yang

An unconventional route was adopted for fabricating Si/graphene composite anodes. Well crystallized silicon powders purified from the silicon waste mortar of solar cell fabrication were mixed with graphene suspended polyvinylidene fluoride (PVDF) solutions, and calcined directly on metal current collectors. It was found that PVDF was pyrolyzed to form a carbon scaffold which laminated the Si and graphene. The graphene sheets were able to hold the Si powers, preventing them from stress-cracking due to large volume change during charge and discharge processes. Silicon anodes using conventional coating method with PVDF binder and carbon black were also fabricated for comparison. The carbon laminated Si anodes (Si/C) exhibit an initial delithiation capacity of more than 2500 mAh/g at 0.1 C, which is greatly higher than the pristine Si anode (capacity of only 8 mAh/g at 0.1 C). By adding graphene in the composite, the carbon laminated Si/graphene anodes show improved cycling stability, with a 1 C delithiation capacity of 1420 mAh/g after 60 cycles, which is twice as high as Si/C anodes. The results indicate that high capacity and high cycling stability can be achieved by a pyrolysis based carbon lamination process in which graphene and Si powders are attached to each other.

Polyvinylidene fluoride

Carbon fibers

Graphene foam

10.1149/ma2016-03/2/939

Cite

Citations (0)