Bifunctional Pd/Fe3O4/charcoal nanocatalysts are synthesized by simple solid-state grinding. Highly loaded Pd and Fe3O4 nanoparticles are observed and exhibit high product time yield for Suzuki–Miyaura coupling reactions.
We developed inverted red quantum dot light-emitting diodes (QLEDs) with ZnO nanoparticles synthesized in open and closed systems. Wurtzite-structured ZnO nanoparticles were synthesized using potassium hydroxide and zinc acetate dihydrate at various temperatures in the open and closed systems. The particle size increases with increasing synthesis temperature. The ZnO nanoparticles synthesized at 50, 60, and 70 °C in the closed system have an average particle size of 3.2, 4.0, and 5.4 nm, respectively. The particle size is larger in the open system compared to the closed system as the methanol solvent evaporates during the synthesis process. The surface defect-induced emission in ZnO nanoparticles shifts to a longer wavelength and the emission intensity decreases as the synthesis temperature increases. The inverted red QLEDs were fabricated with a synthesized ZnO nanoparticle electron transport layer. The driving voltage of the inverted QLEDs decreases as the synthesis temperature increases. The current efficiency is higher in the inverted red QLEDs with the ZnO nanoparticles synthesized in the closed system compared to the devices with the nanoparticles synthesized in the open system. The device with the ZnO nanoparticles synthesized at 60 °C in the closed system exhibits the maximum current efficiency of 5.8 cd/A.
Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML and ZnO NP EIL. To overcome these challenges, we introduced an arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to an improved charge balance within the QDs. Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. An inverted QLED (IQLED) utilizing a 20 nm-thick Arg IL on the ZnO NP EIL exhibited a 2.22-fold increase in current efficiency and a 2.28-fold increase in external quantum efficiency (EQE) compared to an IQLED without an IL. Likewise, the IQLED with a 20 nm-thick Arg IL on the ZnO NP EIL demonstrated a 1.34-fold improvement in current efficiency and a 1.36-fold increase in EQE compared to the IQLED with a 5 nm-thick polyethylenimine IL on ZnO NPs.
Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of ZnO NP ETL material often results in charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of QD EML and ZnO NP EIL. To overcome these challenges, we introduced an Arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to improved charge balance within the QDs, Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. The inverted QLED (IQLED) utilizing a 20-nm-thick Arg IL on ZnO NP EIL exhibited a 2.22-fold increase in current efficiency and a 2.28-fold increase in EQE and compared to an IQLED without an IL. Likewise, the IQLED with a 20-nm-thick Arg IL on ZnO NP EIL demonstrated a 1.34-fold improvement in current efficiency and a 1.36-fold increase in EQE compared to IQLED with a 5-nm-thick PEI IL on ZnO NPs.
A new burner configuration for a compact fuel-cell reformer with a high-temperature air combustion concept was numerically studied. The burner was designed for a 40 hydrogen-generated reformer using natural gas-steam reforming method. In order to satisfy the primary requirements for designing a reformer burner (uniform distribution of temperature along the fuel processor walls and minimum heat losses from the reformer), the features of the present burner configuration included 1) a self-regenerative burner for an exhaust-gas-recirculation to apply for the high-temperature air combustion concept, and 2) an annular-type shield for protecting direct contact of flame with the processor walls. For the injection velocities of the recirculated gas of 0.6-2.4 m/s, the recirculated gas temperature of 1000 K, and the recirculated oxygen mole fraction of 4%, the temperature distributions along the processor walls were found uniform within 100 K variation. Thus, the present burner configuration satisfied the requirement for reducing temperature gradients along the processor walls, and consequently demonstrated that the high-temperature air combustion concept could be applied to the practical fuel reformers for use of fuel cells. The uniformity of temperature distribution is enhanced as the amount of the recirculated gas increases.
This paper presents a study aimed at enhancing the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO3) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoO3 NP layer on device characteristics and explores the underlying mechanisms responsible for the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoO3 NPs during the synthesis process. Ultraviolet photoelectron spectroscopy is employed to analyze the electron structure of the QLEDs. The QLED with an 8 mg/mL concentration of MoO3 nanoparticles achieves remarkable improvements in device performance, with a maximum luminance of 69,240.7 cd/cm2, maximum current efficiency of 56.0 cd/A, and maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify a notable progress in comparison to QLED without HIL and those utilizing the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancement of 59.5% and 26.4% in maximum current efficiency, respectively, as well as a significant improvement of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.
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