Qixin Guo

Saga University

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Co-Authors

Tooru Tanaka

Saga University

201

Katsuhiko Saito

Saga University

160

Mitsuhiro Nishio

Toyota Technological Institute

159

Hiroshi Ogawa

National Epilepsy Center

124

K. M. Yu

Lawrence Berkeley National Laboratory

Wenzhong Shen

Shanghai Jiao Tong University

Makoto Arita

RIKEN Center for Integrative Medical Sciences

Fabi Zhang

Guilin University of Electronic Technology

Jian Ding

Shanghai Jiao Tong University

Tongxiang Fan

Southwest University of Science and Technology

Cooperative Institutions

Saga University

145

Chinese Academy of Sciences

124

Shanghai Jiao Tong University

University of Chinese Academy of Sciences

Kyushu University

Shandong University

University of Science and Technology of China

Institute of Physics

Huazhong University of Science and Technology

The University of Tokyo

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Temperature effects on optical properties of InN thin films

Applied Physics A (2003)

Longyang Jiang Wenzhong Shen Hao Yang Hiroshi Ogawa Qixin Guo

Molar absorptivity

Absorption edge

10.1007/s00339-002-2002-7

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Citations (19)

Temperature dependence of luminescence characteristics from Eu doped Ga₂O₃ thin films excited by synchrotron radiation source

Japanese Journal of Applied Physics (2023)

Yafei Huang Gaofeng Deng Zewei Chen Katsuhiko Saito Tooru Tanaka

Abstract Ga 2 O 3 thin film with Eu doping was prepared on p -Si substrate by pulsed laser deposition to investigate the temperature dependence of photoluminescence from Eu 3+ and host. The obtained Ga 2 O 3 :Eu thin film has a polycrystalline monoclinic structure and smooth surface. The film exhibits multiple sharp emissions originating from Eu 3+ dopants, as well as broad defect-related emissions in the UV-green region from Ga 2 O 3 host. With increasing the temperature from 21 K to RT, the red emission from Eu 3+ keeps unchanged in the wavelength, and remains ∼55% PL intensity. Meanwhile, Ga 2 O 3 defect-related UV and blue emissions experience a strong thermal quenching and a distinct red shift following the Varshni equation and Bose–Einstein expression. These experimental data will provide reliable guide for fabricating efficient luminescent devices based on rare-Earth doped Ga 2 O 3 .

Monoclinic crystal system

10.35848/1347-4065/acd59b

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Citations (3)

Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates

Japanese Journal of Applied Physics (2008)

Qixin Guo Tooru Tanaka Mitsuhiro Nishio Hiroshi Ogawa

We report the structural and optical properties of AlInN films grown on (0001) sapphire substrates by reactive radio-frequency (rf) magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. X-ray diffraction analysis and atomic force microscopy show that AlInN films with a smooth surface can be obtained and that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the AlInN films decreases with an increase in the Al composition x. Optical transmittance and reflectance spectra analysis reveals that the AlInN films are of a direct bandgap structure as AlN and InN. The bandgap energy of the AlInN films can be tailored by varying the ratio of the rf power of the indium target to that of the aluminium target.

Lattice constant

Wide-bandgap semiconductor

Indium nitride

10.1143/jjap.47.612

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Citations (37)

Research on Application of Split Reactance Type FCL in Distribution Network with DG

Lecture notes in electrical engineering (2023)

Teng Chi Zhifeng Zhang Rongze Niu Mingming Xu Qixin Guo

Reactance

Fault current limiter

Limiting

Current limiting

10.1007/978-981-99-0451-8_2

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Citations (0)

An unexpected surfactant role of immiscible nitrogen in the structural development of silver nanoparticles: an experimental and numerical investigation

Nanoscale (2019)

Jungheum Yun Hee‐Suk Chung Sang‐Geul Lee Jong‐Seong Bae Tae Eun Hong

N-Surfactant-facilitated sputter deposition provides strong selectivity for crystalline orientation and facets due to drastic decreases in the surface free energies of Ag nanoparticles supported on oxide substrates.

10.1039/c9nr08076g

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Citations (26)

Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780 nm pump beam

Applied Physics Express (2021)

Miezel Talara Dmitry S. Bulgarevich Chiyaka Tachioka Valynn Katrine Mag-usara Joselito Muldera

Abstract We report on efficient terahertz (THz) wave generation of Fe/Pt diabolo-shaped spintronic antennas with different Pt thicknesses fabricated on MgO substrates. Compared with the antenna-free spintronic bilayer, ∼45% and ∼98% emission amplitude improvements were obtained when using the antennas with thin and thick Pt, respectively, as THz radiation sources. The improvement can be attributed to the enhanced outcoupling of THz radiation to free space and to the enhanced THz emission with the deposition of thicker Pt layer at the displacement current direction. Our results suggest that efficient spintronic radiation sources can be obtained with proper design of these THz emitters.

10.35848/1882-0786/abeea0

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Citations (16)

Improved two-step photon absorption current by Cl-doping in ZnTeO-based intermediate band solar cells with n-ZnS layer

Solar Energy Materials and Solar Cells (2021)

Tooru Tanaka Shuji Tsutsumi Katsuhiko Saito Qixin Guo K. M. Yu

Photocurrent

Photon energy

10.1016/j.solmat.2021.111456

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Citations (7)

Raman spectroscopic study of frustrated ferroelectric phase in hydroxyl salts Co₂(OH)₃Br/Co₂(OD)₃Br

Journal of Physics Condensed Matter (2021)

Xing‐Liang Xu Dongdong Meng 旭光鄭 Qixin Guo

Abstract We report on an investigation of the temperature-dependent ordering of the hydrogen/deuterium atoms in geometrically frustrated magnets Co 2 (OH) 3 Br and its deuterated Co 2 (OD) 3 Br, to shed light on the origin of the newly-identified ferroelectricity using Raman spectroscopy. Significant changes in the Raman frequencies and line-widths of the Raman-active modes were observed below ∼260 K in Co 2 (OD) 3 Br and ∼240 K in Co 2 (OH) 3 Br, respectively, the analysis of which revealed strong spin–phonon couplings in this system. Further, for Co 2 (OD) 3 Br, six new phonon bands appeared below around 260 K, with the corresponding intensities obeying a power-law equation I ∝ 1 − T / T c 2 β wherein T c = 260 K, suggesting that an ordering process occurred below ∼260 K. The ordering process subsequently affected the local structure and brought out the reported ferroelectric phase, which is considered as frustrated. Meanwhile, in Co 2 (OH) 3 Br, only one new band was observed below ∼240 K, followed by two ‘softened’ modes correlated to the [OH] sub-lattice below ∼185 K, wherein an incomplete ordering was suggested. The present work reveals a new multiferroic system combining geometrically frustrated magnetism and deuterium ordering-type ferroelectricity.

10.1088/1361-648x/abfe22

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Citations (0)

Growth and characterization of reactive sputtered AlInN films

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2003)

Qixin Guo Kousuke Yahata Tooru Tanaka Mitsuhiro Nishio Hiroshi Ogawa

Ternary AlInN films were grown on (0001) sapphire substrates by reactive radio-frequency magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. It was found that the formation of nitride phase during reactive sputtering is mainly occurring at the substrate. X-ray diffraction analysis revealed that highly c-axis-oriented AlInN films with a wurtzite structure can be obatined. The Al composition in the AlInN films could be controlled by changing the ratio of the sputtered area of the aluminum plate to that of the indium plate. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Wurtzite crystal structure

Indium nitride

Characterization

10.1002/pssc.200303378

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Citations (9)

Realization of rocksalt Zn_1−xCd_xO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy

CrystEngComm (2020)

HyoChang Jang Katsuhiko Saito Qixin Guo K. M. Yu Władek Walukiewicz

We have grown Zn_1−xCd_xO (ZnCdO) thin films by molecular beam epitaxy on α-Al₂O₃(0001) substrates across the full composition range of 0 ≤x≤ 1. A large optical gap of 3.0 eV is obtained in rocksalt-ZnCdO with a low resistivity and high mobility.

Realization (probability)

10.1039/c9ce02018g

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Citations (8)