본 연구의 목적은 중소기업의 보안활동(물리적·기술적·관리적 보안)이 보안준수의도에 미치는 영향과 두 변수 간의 관계에서 조직몰입 및 자기효능감의 매개효과를 검증하는 것이다. 연구목 적을 달성하기 위하여 중소기업에 근무하는 근로자를 대상으로 설문을 하였으며, 총 270명의 응 답자 중 불성실한 응답 내용을 제외하고 263명의 데이터를 분석에 사용하였다. 본 연구의 결론 은 다음과 같다. 첫째, 기업보안활동(기술적 보안)은 보안준수의도에 영향을 미치는 것으로 나타 났다. 둘째, 조직몰입 및 자기효능감은 기술적 보안과 보안준수의도와의 관계에서 부분 매개효 과를 보여주었다. 본 연구결과는 기업 내 조직구성원들의 보안준수의도를 높이기 위한 정책 수 립의 기초자료가 될 것으로 기대한다.
Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm−2 10-pulse annealing while considerable increase in phosphorus activation is achieved.
Abstract Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current ( I th ) and voltage ( V th ) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA.
Abstract : The penetration mechanics of a thick walled tubular penetrator is examined as ratio of the outer to inner diameter is increased from values of 0.4 to 0.74. Since the craters are characterized by depth and radius, analytical models for the crater radius due to tubular penetrators are developed. A two stage cavity expansion model is provided, which is based on the observations that in the first stage, the eroded penetration element exerts pressure on the target and opens a cavity. In the second stage, the inertia imparted to the target is responsible for the further expansion of the cavity. The analysis includes the centrifugal force exerted by the penetrator, radial inertia of the target, and the strength of the target. The crater radius is also determined from the energy and momentum principles and the results are compared with other results. The results obtained from the momentum principle provide good agreement with the other models in spite of its simplicity. The penetration velocity for tubes, which is less than that of rods, thus cannot be obtained from the modified hydrodynamic theory, is determined from computer simulations on behalf of the penetration efficiency. Numerical simulations using AUTODYN-2D are conducted for comparison with the analytical predictions and these confirm the phenomenological assumptions in the models.
'%3e%3cg id='b'%3e%3cpath id='a' stroke='%23000' stroke-width='2' d='M-6-25H6m-12 3H6m-12 3H6'/%3e%3cuse xlink:href='%23a' y='44'/%3e%3c/g%3e%3cpath stroke='%23fff' d='M0 17v10'/%3e%3ccircle r='12' fill='%23cd2e3a'/%3e%3cpath fill='%230047a0' d='M0-12A6 6 0 0 0 0 0a6 6 0 0 1 0 12 12 12 0 0 1 0-24z'/%3e%3c/g%3e%3cg transform='rotate(-123.69)'%3e%3cuse xlink:href='%23b'/%3e%3cpath stroke='%23fff' d='M0-23.5v3M0 17v3.5m0 3v3'/%3e%3c/g%3e%3c/svg%3e)