Abstract Background: Podocyte loss is a detrimental feature and major cause of proteinuria in diabetic nephropathy (DN). Our previous study revealed that hepatocyte growth factor (HGF) prevented high glucose-induced podocyte injury via enhancing autophagy. In the current study, we aimed to assess the role of HGF on podocyte homeostasis in DN and clarify its mechanisms further. Methods: Streptozotocin (STZ)-induced DN mice were applied as a model to verify the impact of HGF on the prevention of type 1 diabetes. To study the mechanism involved, the autophagy flux and related signaling pathway upon HGF were examined and the relevance of lysosome acidification in cultured podocytes were investigated. Results: Diabetic mice treated with HGF had markedly reduced ratio of kidney weight to body weight, urinary albumin excretion, podocyte loss and matrix expansion compared with that in the non-treated counterpart. Simultaneously, HGF-treated diabetic mice exhibited increased autophagy activity as indicated by the decreased accumulation of sequestosome 1 (SQSTM1/ p62) and increased microtubule-associated proteins 1 light chains 3 (LC3) II/LC3I ratio. These beneficial effects of HGF were blocked by HGF/c-Met inhibitor Crizotinib or phosphatidylinositide 3-kinases (PI3K) inhibitor LY294002. Moreover, HGF treatment obviously prevented inactivation of the protein kinase B (Akt)-glycogen synthase kinase 3 beta (GSK3β)-transcription factor EB (TFEB) axis in high glucose-stimulated podocytes, which was associated with improved lysosome function and autophagy. Accordingly, adenovirus vector encoding constitutively active GSK3β (Ad-GSK3β-S9A) offset whereas small interfering RNA against GSK3β (GSK3β siRNA) recapitulated salutary effects of HGF on lysosome number and autophagy in podocytes. Conclusions : These results suggested that HGF protected against diabetic nephropathy through restoring podocyte autophagy, which at least partially involved PI3K/Akt-GSK3β-TFEB axis-mediated lysosomal function improvement.
Radiation effect of electronic devices is a complex issue that attracted a lot of interest in the area of aviation industry and nuclear engineering. In order to investigate the relationship between structure damage and electrical performance of electronic devices, first-principle modeling and calculations were carried out to link SiO 2 /Si interfacial defect states and electron transport properties of electronic devices. We found that the oxygen vacancy (V O ) is much more easier to form than silicon vacancy ($\textbf{V}_{\mathbf {Si}}$) under the radiation environment. The band structure shows that two defect levels were localized inside the band gap of the SiO 2 /Si interface, approximately 0.19 eV and 0.25 eV below the conduction band minimum (CBM) as electronic traps, which were induced by a Si dangling bond defects. The $\textbf{V}_{\mathbf {O\, }}$ as the donor defect makes the interface restructuring and chemical bond changing, which leads to the defect level crossing the Fermi level ($E_{\mathbf {F}}$). Oxygen atoms of SiO 2 at the interface act as a potential well to keep electrons from tunneling. The barrier for carriers disappear after oxygen atom being moved, which will reduce the electrical gain and breakdown strength of devices. Our results gave a physical interpretation to the relationship between defects and electrical performance of electronic materials and indicated that the dangling bonds and $\textbf{V}_{\mathbf {O}}$textbf at the interface are needed to be suppressed generating in order to harden the electronic devices.
The characteristic of electromagnetic plane wave in the magnetically anisotropic medium discussed with the Maxwell equations and medium equations. The Fresnel equation of the magnetic crystal is obtained and the dual relationship is proved,with which the properties structure,propagation and polarization of the plane wave are studied.
The continuous phase displacement frequency signal of the time domain and frequency domain properties are discussed,and center frequency component of relative amplitude was given.In order to design a railway special continuous phase frequency shift signal,the United States Texas instruments(TI) 16 ultra-low power MSP430 MCU series single-chip microcomputer is used to control AD9832 produce continuous phase frequency shift of FSK signal.And railway ZPW2000 test instrument is used for the measurement and the analysis measuring results show that,whether the carrier frequency or low frequency,the error is not more than 0.05 Hz,completely meet the railway frequency shift error is not more than 0.1 Hz requirements.And for the railway transport provide theory and practice.
Herein, red-emitting nitrogen-doped carbon dots (N-CDs) were prepared using p-phenylenediamine and polyethylene glycol 20000 as precursors. The N-CDs are spherical and uniformly distributed with average particle sizes of 2.36 nm. The N-CDs display excitation-independent fluorescence behavior with the optimal excitation and the maximum emission wavelengths centered at 487 and 628 nm, respectively. Results indicated that as prepared CDs can provide a rapid and highly selective recognition of Cu2+ with the range of 45-70 µM and a detection (LOD) limit of 45.87 µM. A clear color change of the N-CDs solution (orange-red to black) can also be visualized by adding Cu2+. Moreover, a smartphone-based platform for the detection of Cu2+ was developed to detect Cu2+ in real time by analyzing RGB values, giving a linear range of 20-140 µM. and a LOD limit of 35.83 µM. In addition, it was applied for the detection of Cu2+ in tap water, the recoveries were 86.18%-104.95%, and the relative standard deviations were 1.64%-2.43%. The N-CDs can be used to detect Cu2+ in vitro and in vivo.
Virtual enterprise is a kind of dynamic union of enterprises with various capabilities, which suits for the fast developing market environment. The main purpose of the enterprises' participation is to get more benefits from virtual enterprises. The benefit allocation is a significant part in the virtual enterprise theories. Its foundation lies in the value of allocation elements. Starting with the foundation of benefit allocation, this paper raises a systematic statement on the participating elements, and establishes their value by a quantitative and qualitative a nalysis.
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