Importance Parenteral enoxaparin is a preferred anticoagulant used in the acute phase for patients with acute coronary syndrome (ACS). The safety and efficacy of short-term low-dose rivaroxaban in this clinical setting remain unknown. Objective To compare the safety and efficacy of rivaroxaban vs enoxaparin in the acute phase of ACS. Design, Setting, and Participants This multicenter, prospective, open-label, active-controlled, equivalence and noninferiority trial was conducted from January 2017 through May 2021 with a 6-month follow-up at 21 hospitals in China. Participants included patients with ACS missing the primary reperfusion window or before selective revascularization. Data were analyzed from November 2021 to November 2022. Interventions Participants were randomized 1:1:1 to oral rivaroxaban 2.5 mg or 5 mg or 1 mg/kg subcutaneous enoxaparin twice daily in addition to dual antiplatelet therapy (DAPT; aspirin 100 mg and clopidogrel 75 mg once daily) for a mean of 3.7 days. Main Outcomes and Measures The primary safety end point was bleeding events, as defined by the International Society on Thrombosis and Haemostasis, and the primary efficacy end point was major adverse cardiovascular events (MACEs), including cardiac death, myocardial infarction, rerevascularization, or stroke during the 6-month follow-up. Results Of 2055 enrolled patients, 2046 (99.6%) completed the trial (mean [SD] age 65.8 [8.2] years, 1443 [70.5%] male) and were randomized to enoxaparin (680 patients), rivaroxaban 2.5 mg (683 patients), or rivaroxaban 5 mg (683 patients). Bleeding rates were 46 patients (6.8%) in the enoxaparin group, 32 patients (4.7%) in the rivaroxaban 2.5 mg group, and 36 patients (5.3%)in the rivaroxaban 5 mg group (rivaroxaban 2.5 mg vs enoxaparin: noninferiority hazard ratio [HR], 0.68; 95% CI, 0.43 to 1.07; P = .005; rivaroxaban 5 mg vs enoxaparin: noninferiority HR, 0.88; 95% CI, 0.70 to 1.09; P = .001). The incidence of MACEs was similar among groups, and noninferiority was reached in the rivaroxaban 5 mg group (HR, 0.60; 95% CI, 0.31 to 1.16, P = .02) but not in the rivaroxaban 2.5 mg group (HR, 0.68; 95% CI, 0.36 to 1.30; P = .05) compared with the enoxaparin group. Conclusions and Relevance In this equivalence and noninferiority trial, oral rivaroxaban 5 mg showed noninferiority to subcutaneous enoxaparin (1 mg/kg) for patients with ACS treated with DAPT during the acute phase. Results of this feasibility study provide useful information for designing future randomized clinical trials with sufficient sample sizes. Trial Registration ClinicalTrials.gov Identifier: NCT03363035
We experimentally demonstrate a novel gate stack engineering technique by introducing a Tunnel Dielectric Layer (TDL) between two Ferroelectric (FE) layers, significantly increasing the Memory Window (MW) in FEFETs. An $\gt 2 \mathrm{X}$ improvement, from $2.9 \mathrm{~V}$ in the reference device (without TDL) to $7.5 \mathrm{~V}$ in the $8 / 3 / 8$ configuration with TDL, was achieved within NAND thickness limit of $20 \mathrm{~nm}$ and write voltage $\leq 15 \mathrm{~V}$. Impact of FE and TDL thickness in MW was also explored.
We track carrier capture and emission dynamics during write operations in n-type ferroelectric-field-effect transistors (FEFETs) by directly and separately measuring the trap related hole and electron currents through the body terminal and shorted source-drain, respectively. Both electron and hole currents are simultaneously observed during polarization switching, irrespective of whether the channel is in hole accumulation or electron inversion. This allows us to discover the exact mechanism of emission and capture of carriers, which leads to partial neutralization of the traps charged in the previous write cycle. With fatigue cycling, the neutralization of trapped charges progressively decreases, and the density of trap states increases leading to $I_{G}$ , SS and peak $g_{m}$ degradation. An increase in the effective time constant of trap states is also evident with cycling as a fatigued FEFET requires longer time to reach a given memory window after a write operation. We conclude that the memory window in FEFETs is facilitated by neutralization of traps, previously charged by carriers captured during FE switching (i. e., write operation) that screen the ferroelectric polarization. These emission and capture dynamics place the trap levels close to $E_{c}$ and $E_{v}$ and inside the SiO 2 and at the SiO 2 /HZO interface, and currently hinders high-speed read-after-write in front-end FEFETs. The universality of the suggested mechanisms is confirmed in FEFETs fabricated in different facilities.
This paper presents a broadband high-efficiency harmonic-tuned power amplifier (PA) with quasi-elliptic low-pass responses. A combination of continuous Class-F −1 and extended continuous Class-F PA modes is employed to significantly expand the design space. A quasi-elliptic low-pass matching network is proposed, which can realize a broadband impedance matching in the predefined optimal impedance region desired by the combination of PA modes. Furthermore, two transmission zeros are generated near the passband, exhibiting high skirt selectivity and providing rapid impedance transition from the passband to the stopband. A wide stopband covering up to the third harmonic is achieved which shows good harmonic suppression. Design procedures of the proposed broadband PA are presented. To verify the proposed methodology, the broadband PA is fabricated and measured. The implemented PA achieves a bandwidth of 145.2% from 0.5 to 3.15 GHz. Over this frequency range, the drain efficiency is measured as 58–74.9% with the output power of greater than 39.03 dBm and a large signal gain ranging from 8.43 to 15.67 dB. A wide stopband is realized from 3.4 to 10 GHz, showing excellent quasi-elliptic low-pass responses. The measured adjacent leakage ratios (ACLRs) using a 20-MHz LTE signal with digital pre-distortion are below −45.06 dBc.
Summary Advances in bioelectronics have great potential to address unsolvable biomedical problems in the cardiovascular system. By using poly(L-lactide-co-ε-caprolactone) (PLC) that encapsulates the liquid metal to make flexible and bio-degradable electrical circuitry, we develop an electronic blood vessel that can integrate flexible electronics with three layers of blood vessel cells, to mimic and go beyond the natural blood vessel. It can improve the endothelization process through electrical stimulation and can enable controlled gene delivery into specific part of the blood vessel via electroporation. The electronic blood vessel has excellent biocompatibility in the vascular system and shows great patency three months post-implantation in a rabbit model. The electronic blood vessel would be an ideal platform to enable diagnostics and treatments in the cardiovascular system and can greatly empower personalized medicine by creating a direct link of vascular tissue-machine interface.
While the theoretical maximum of the memory window $\Delta {V}_{t}$ in a ferroelectric field-effect transistor (FEFET) is $2{E}_{C}{t}_{F}$ , ${E}_{C}$ and ${t}_{F}$ being coercive field and FE thickness, respectively, experimentally $\Delta {V}_{t}$ is observed to be much less than that, even in the case of complete polarization switching in the ferroelectric layer. This occurs because trapped charges in the gate oxide stack partially or completely screen the ferroelectric polarization, only a fraction of which gets “electrostatically” reflected in the semiconductor channel. In this article, we provide a generalized experimental framework to quantify the efficiency of practical FEFETs in converting the switched ferroelectric polarization into the memory window. To that end, we propose three efficiency metrics: 1) switched ferroelectric polarization $\Delta {P}_{F}$ to memory window conversion ratio, $\eta _{MW}=\Delta {V}_{t}/\Delta {P}_{F}$ ; 2) switched ferroelectric polarization to the semiconductor charge ($\Delta {Q}_{S}$ ) conversion efficiency or the charge conversion efficiency $\eta _{c}=\Delta {Q}_{s}/\Delta {P}_{F}$ ; and 3) the ratio of memory window to the width of polarization versus gate voltage hysteresis characteristics ($\Delta {V}_{P}$ ) or the voltage conversation efficiency $\eta _{V}=\Delta {V}_{t}/\Delta {V}_{P}$ . We measure and compare these efficiency metrics in n-type and p-type FEFETs, fabricated in different facilities by different groups. In all the cases, we find that the maximum values of memory window efficiency $(\eta _{MW})_{max}$ , charge conversion efficiency $(\eta _{c}$ )$_{max}$ , and voltage conversion efficiency ($\eta _{V}$ )$_{max}$ are in the range: 2.5–5.5 Vm2/C, 4%–10%, and 5%–20%, respectively.
Background The incidence of diabetes mellitus (DM) in China is increasing yearly and has become a major problem plaguing national public health. The diagnosis of diabetic kidney disease (DKD) is based primarily on clinical criteria, and most patients do not receive a formal evaluation by renal biopsy; thus, misdiagnosis and underdiagnosis are common. The incidence of non-diabetic kidney disease (NDKD) is also higher in those with DM. To date, many cases of IgA nephropathy (IgAN) among those with DKD have been reported, while cases of IgAN in patients with long-duration DM who did not develop DKD are less commonly reported. Case description A 70-year-old male patient with a diabetes duration of 26 years had proteinuria for one year. The clinical manifestations of nephrotic syndrome and IgAN were confirmed by renal biopsy. The patient received targeted treatment for three years with partial alleviation of proteinuria. Conclusion Renal biopsy might aid in the definitive diagnosis of DKD, NDKD, and NDKD combined with DKD. Precise therapy based on renal pathology might help to improve outcomes in the kidney.
Abstract MAPbBr 3 single crystal (SC) thin layer was successfully grown on MAPbCl 3 SC substrate to form perovskite SC heterojunction. Planar structure electrodes are deposited by thermal evaporation on the surfaces of MAPbCl 3 , MAPbBr 3 , and SCs heterojunction, respectively to evaluate their photoelectric performance. The SC heterojunction device exhibits excellent unidirectional conductivity in the voltage-current curves. Meanwhile, the current–time curves prove that SC heterojunction devices can effectively utilize the advantages of MAPbCl 3 and MAPbBr 3 , possessing relatively low dark current (∼300 nA), which is comparable to the dark current of MAPbCl 3 , but very high photocurrent (∼3500 nA), which is equivalent to the photocurrent of MAPbBr 3 . Rather than the photocurrent overshot and decay occurring at the exposure of light illumination in the MAPbBr 3 device, the photocurrent is extremely stable without overshot and decay in the SC heterojunction device. The light-to-dark ratio of the SC heterojunction device is twice that of MAPbCl 3 device and three times that of MAPbBr 3 device. Furthermore, the detectivity of the heterojunction device reaches as high as ∼7×1011 Jones , an order of magnitude higher than MAPbCl 3 and MAPbBr 3 . The excellent characteristics of SC heterojunction further expand the practical application prospect of perovskite materials.
'/%3e%3cuse xlink:href='%23a' transform='rotate(23.036 .093 25.536)'/%3e%3cuse xlink:href='%23a' transform='rotate(45.87 1.273 16.18)'/%3e%3cuse xlink:href='%23a' transform='rotate(69.945 .996 12.078)'/%3e%3cuse xlink:href='%23a' transform='rotate(20.66 -19.689 31.932)'/%3e%3c/svg%3e)
