Nanomechanical resonators (NRs) with very high frequency have a great potential for mass sensing with unprecedented sensitivity. In this study, we propose a scheme for mass sensing based on the NR capacitively coupled to a Cooper-pair box (CPB) driven by two microwave currents. The accreted mass landing on the resonator can be measured conveniently by tracking the resonance frequency shifts because of mass changes in the signal absorption spectrum. We demonstrate that frequency shifts induced by adsorption of ten 1587 bp DNA molecules can be well resolved in the absorption spectrum. Integration with the CPB enables capacitive readout of the mechanical resonance directly on the chip.

Nanochemistry

Cooper pair

10.1186/1556-276x-6-570

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Citations (7)

Four-wave mixing response in a hybrid atom-optomechanical system

Journal of the Optical Society of America B (2019)

Xiaofang Wang Bin Chen

We study the four-wave mixing (FWM) effect in a hybrid atom-optomechanical system, which is composed of an ensemble of two-level atoms trapped inside an optical cavity and a moveable cavity mirror serving as a mechanical resonator. It is shown that the FWM signal in this hybrid system can be significantly enhanced due to the coupling between the optical cavity and the atom ensemble. The larger the atom-cavity coupling strength is, the stronger the FWM will be. More interestingly, the FWM signal can be effectively modulated by the atom-pump detuning. It is demonstrated that, just by tuning this detuning to be positive or negative, the FWM signal can be easily switched on or off for the zero probe-pump detuning case. The obtained results may have potential applications in all-optical wavelength convertors, all-optical switches, or other optical devices.

Four-wave mixing

SIGNAL (programming language)

Optical cavity

10.1364/josab.36.000162

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Citations (15)

Pre-tension generates strongly reversible adhesion of a spatula pad on substrate

Journal of The Royal Society Interface (2008)

Bin Chen Peidong Wu Huajian Gao

Motivated by recent studies on reversible adhesion mechanisms of geckos and insects, we investigate the effect of pre-tension on the orientation-dependent adhesion strength of an elastic tape adhering on a substrate. Our analysis shows that the pre-tension can significantly increase the peel-off force at small peeling angles while decreasing it at large peeling angles, leading to a strongly reversible adhesion. More interestingly, we find that there exists a critical value of pre-tension beyond which the peel-off force plunges to zero at a force-independent critical peeling angle. We further show that the level of pre-tension required for such force-independent detachment at a critical angle can be induced by simply dragging a spatula pad along a substrate at sufficiently low angles. These results provide a feasible explanation of relevant experimental observations on gecko adhesion and suggest possible strategies to design strongly reversible adhesives via pre-tension.

Gecko

Tension (geology)

10.1098/rsif.2008.0322

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Citations (122)

CCDC 1504316: Experimental Crystal Structure Determination

The Cambridge Structural Database (2017)

Bin Chen Han Zhang Wenwen Luo Han Nie Rongrong Hu

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

10.5517/ccdc.csd.cc1mhcbt

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Citations (0)

Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization

Acta Materialia (2011)

Bin Chen Hirofumi Matsuhata Takashi Sekiguchi Kyouichi Ichinoseki Hajime Okumura

Cathodoluminescence

Characterization

10.1016/j.actamat.2011.09.010

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Citations (52)

Ultra‐Long Carrier Lifetime of Spiral Perovskite Nanowires Realized through Cooperative Strategy of Selective Etching and Passivation

Small (2024)

Cheng Zheng Jia He Wei Liu Zhiwen Liu Linfeng Xu

Spiral inorganic perovskite nanowires (NWs) possess unique morphologies and properties that allow them highly attractive for applications in optoelectronic and catalytic fields. In popular solution-based synthesis methodology, however, challenges persist in simultaneously achieving precise and facile control over morphological twisting and fantastic carrier lifetimes. Here, a cooperative strategy of concurrently employing selective etching and ligand engineering is applied to facilitate the formation of spiral CsPbBr

Passivation

Carrier lifetime

10.1002/smll.202404861

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CCDC 1057763: Experimental Crystal Structure Determination

The Cambridge Structural Database (2021)

Xingjun Gao Yuting Zhang Qianqian Xie Weiqiang Xu Shouwen Jin

10.5517/ccdc.csd.cc14hpdq

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CCDC 1507531: Experimental Crystal Structure Determination

The Cambridge Structural Database (2021)

Zhihao Lin Ronghui Wu Bin Chen Shouwen Jin Lingfeng Dong

10.5517/ccdc.csd.cc1mlq1z

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Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

Chinese Physics B (2012)

Xianjun Zhang Yintang Yang Baoxing Duan Changchun Chai Kun Song

Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal—semiconductor field-effect transistor (SMGFET).

Drain-induced barrier lowering

MESFET

Channel length modulation

Short-channel effect

Metal gate

10.1088/1674-1056/21/9/097302

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Citations (3)