Abstract Photocatalysis has garnered significant attention as a sustainable approach for energy conversion and environmental management. 2D black phosphorus (BP) has emerged as a highly promising semiconductor photocatalyst owing to its distinctive properties. However, inherent issues such as rapid recombination of photogenerated electrons and holes severely impede the photocatalytic efficacy of single BP. The construction/stacking mode of BP with other nanomaterials decreases the recombination rate of carriers and extend its functionalities. Herein, from the perspective of atomic interface and electronic interface, the enhancement mechanism of photocatalytic performance by heterogeneous interface engineering is discussed. Based on the intrinsic properties of BP and corresponding photocatalytic principles, the effects of diverse interface characteristics (point, linear, and planar interface) and charge transfer mechanisms (type I, type II, Z‐scheme, and S‐scheme heterojunctions) on photocatalysis are summarized systematically. The modulation of heterogeneous interfaces and rational regulation of charge transfer mechanisms can enhance charge migration between interfaces and even maximize redox capability. Furthermore, research progress of heterogeneous interface engineering based on BP is summarized and their prospects are looked ahead. It is anticipated that a novel concept would be presented for constructing superior BP‐based photocatalysts and designing other 2D photocatalytic materials.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTOxygen-induced methyl carbon-hydrogen activation in pentamethylcyclopentadienylruthenium complexesLi Fan, Michael L. Turner, Michael B. Hursthouse, K. M. A. Malik, Oleg V. Gusev, and Peter M. MaitlisCite this: J. Am. Chem. Soc. 1994, 116, 1, 385–386Publication Date (Print):January 1, 1994Publication History Published online1 May 2002Published inissue 1 January 1994https://pubs.acs.org/doi/10.1021/ja00080a050https://doi.org/10.1021/ja00080a050research-articleACS PublicationsRequest reuse permissionsArticle Views342Altmetric-Citations47LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (2)»Supporting Information Supporting Information Get e-Alerts
The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ∼6 × 102 is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.
A cure for the heterogeneous hematological malignancy multiple myeloma (MM) is yet to be developed. To date, the early risk factors associated with poor outcomes in MM have not been fully elucidated. Studies have shown an aberrant complement system in patients with MM, but the precise association necessitates elucidation. Therefore, this study scrutinizes the correlation between serum complement level and the disease outcome of patients with MM.A retrospective analysis of 72 patients with MM (new diagnosis) with complement C4 and C3 along with common laboratory indicators was done. The Pearson χ2 test and the Mann-Whitney U-test were done to evaluate categorical or binary variables and intergroup variance, respectively. Kaplan-Meier test and Cox proportional hazards regression were used for quantification of overall survival (OS) and univariate or multivariate analyses, respectively.The Cox proportional hazard model analysis unveiled the following: platelet ⩽115.5 × 109/L (hazard ratio [HR] = 5.82, 95% confidence interval [CI] = 2.522-13.436, P < .001), complement C4 ⩽0.095 g/L(HR = 3.642, 95% CI = 1.486-8.924, P = .005), age ⩾67 years (HR = 0.191, 95% CI = 0.078-0.47, P < .001), and bone marrow plasma cell percentage ⩾30.75% (HR = 0.171, 95% CI = 0.06-0.482, P = .001) can be used as independent predictors of OS. Of these, advanced age, low platelet level, and a high proportion of bone marrow plasma cells have been implicated in poor outcomes in patients with MM. Interestingly, a low complement 4 level can function as a new indicator of poor prognosis in patients with MM.Low levels of C4 are indicative of a poor outcome in newly diagnosed patients with MM.
Abstract With the increasing application of polyvinyl alcohol (PVA) films in the field of food packaging, it is important to improve its mechanical and antibacterial properties. This paper focuses on the preparation of PVA nanocomposite films and how their properties are affected by a silver-loaded nanocellulose solution. Cellulose nanocrystals (CNCs) were used as both the carrier and the dispersant of silver nanoparticles (AgNPs) prepared using glucose as the reducing agent. Ag + was stabilized by the many hydroxyl groups located in the CNCs, and then the Ag + was reduced to AgNPs in situ . After addition of silver-loaded nanocellulose, the tensile strength of the CNC-PVA-AgNP films increased from 47 MPa to 73 MPa, and the nanocomposite films displayed reduced moisture absorption and good antibacterial properties.
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