Younghoon Kim

Kookmin University

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Jongmin Choi

Daegu Gyeongbuk Institute of Science and Technology

Jigeon Kim

Hanyang University

Taiho Park

Daegu Gyeongbuk Institute of Science and Technology

Min Jae Ko

Hanyang University

Hyosung Choi

Hanyang University

Jinhan Cho

Korea University

Hyung Ryul You

Daegu Gyeongbuk Institute of Science and Technology

Sang‐Hun Han

Daegu Gyeongbuk Institute of Science and Technology

Soo‐Kwan Kim

Daegu Gyeongbuk Institute of Science and Technology

Jae Taek Oh

Institute of Photonic Sciences

Cooperative Institutions

Government of the Republic of Korea

102

Seoul National University

Sungkyunkwan University

Hanyang University

Korea Advanced Institute of Science and Technology

Korea University

Daegu Gyeongbuk Institute of Science and Technology

Samsung (South Korea)

Yonsei University

Pohang University of Science and Technology

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Hydrophobic stabilizer-anchored fully inorganic perovskite quantum dots enhance moisture resistance and photovoltaic performance

Nano Energy (2020)

Jigeon Kim Sinyoung Cho Filip Dinic Jongmin Choi Changsoon Choi

Formamidinium

10.1016/j.nanoen.2020.104985

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Citations (98)

Colloidal-annealing of ZnO nanoparticles to passivate traps and improve charge extraction in colloidal quantum dot solar cells

Nanoscale (2019)

Ho Kun Woo Min Su Kang Taesung Park Junsung Bang Sanghyun Jeon

We introduce a simple method of colloidal annealing to passivate the trap-sites and downshift the band energy of ZnO nanoparticles which efficiently improved the photovoltaic performance.

Passivation

Colloidal particle

10.1039/c9nr06346c

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Citations (33)

Room-temperature stable CsPbI3 perovskite quantum dots prepared by layer-by-layer assembly for photonic synapse

Journal of Alloys and Compounds (2023)

Bon‐Cheol Ku Bonkee Koo Woo-Yeon Kim Younghoon Kim Yu‐Rim Jeon

10.1016/j.jallcom.2023.170459

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Citations (7)

CsPbBr₃ Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al₂O₃ and ZnO Interlayers

physica status solidi (RRL) - Rapid Research Letters (2019)

Hwang-Sik Yun Kyeongchan Noh Jigeon Kim Sung Hoon Noh Gi‐Hwan Kim

Most CsPbBr 3 perovskite quantum dot light‐emitting diodes (PQD‐LEDs) are fabricated with an inverted device structure where hole transport/injection layers are vacuum‐deposited on top of ITO/ZnO (as an electron transport layer (ETL))/PQDs. Standard device architecture of PQD‐LEDs enables a solution‐process of device fabrication; however, the spin‐coating of ZnO ETL dissolved in polar solvent results in decreasing photoluminescence (PL) of PQDs because of PQD destabilization in polar medium. Herein, CsPbBr 3 PQD‐LEDs are fabricated by depositing Al 2 O 3 and ZnO via atomic layer deposition (ALD) to avoid damages originating from the polar solvent during ZnO ETL spin‐coating. Low temperature ALD is adopted to prevent the coarsening of the CsPbBr 3 PQDs. A thicker Al 2 O 3 interlayer can prevent PL quenching, but an excessively thick interlayer hinders electron transport due to the insulating nature of Al 2 O 3 . ZnO is sequentially deposited on Al 2 O 3 interlayer via ALD, and therefore Al 2 O 3 /ZnO bilayer structure is used because of its better electron transporting ability and higher power efficiency in PQD‐LED devices compared with Al 2 O 3 ‐only devices.

Spin Coating

10.1002/pssr.201900573

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Citations (21)

Conductive Paste Inks Prepared Using Ionic-Liquid-Stabilized Metal Nanoparticle Fluids and their Sintering Effect

Electronic Materials Letters (2023)

Taegyun Kwon Younghoon Kim

10.1007/s13391-023-00451-2

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DNA-inspired, highly packed supercoil battery for ultra-high stretchability and capacity

Nano Energy (2021)

Jae Myeong Lee Sungwoo Chun Wonkyeong Son Dongseok Suh Shi Hyeong Kim

10.1016/j.nanoen.2021.106034

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Citations (15)

Understanding the cation-selective ligand passivation for AgBiS2 nanocrystal photovoltaics

Chemical Engineering Journal (2023)

Sung Yong Bae Jonghee Yang Jae Taek Oh Cheong Beom Lee Hochan Song

Passivation

10.1016/j.cej.2023.145674

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Citations (15)

Inorganic nanoparticle multilayers using photo-crosslinking layer-by-layer assembly and their applications in nonvolatile memory devices

Nanoscale (2013)

Sanghyuk Cheong Younghoon Kim Taegyun Kwon Bumjoon J. Kim Jinhan Cho

We introduce a general and facile method for the preparation of organic/inorganic nanoparticle (NP) nanocomposite multilayer films that allows vertical growth of various NP layers (i.e., metal or transition metal oxide NPs) in a densely packed structure. Our approach is based on the successive photo-crosslinking layer-by-layer (LbL) assembly between hydrophobic ligands onto a NP surface and photoinitiator (PI) molecules. Therefore, our approach requires neither the additional surface modification needed for well-defined NPs synthesized in organic media nor the deposition step that inserts a polymer layer bridge between adjacent inorganic NP layers in the preparation of traditional LbL-assembled NP films. We also demonstrate that photo-crosslinking LbL-assembled (metal oxide NP)n films could be used as a nonvolatile memory layer without a high-temperature thermal treatment, unlike conventional vacuum-deposition- or sol–gel-derived memory devices, which require thermal treatments at temperatures greater than 200 °C. This robust method could open a facile route for the design of functional NP-based electronic devices.

Layer by layer

Deposition

Surface Modification

10.1039/c3nr04547a

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Citations (11)

Surface and bulk interactions of NafionRTM with polyelectrolytes

Younghoon Kim

Source

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Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers