Chao Li

Nankai University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Jun Luo

Guangxi University

Jia He

Tianjin University of Technology

Yi Ding

Tianjin University of Technology

Richeng Yu

Fuzhou University

Guanglei Cui

Qingdao Institute of Bioenergy and Bioprocess Technology

Yuan Yao

Institute of Physics

Qi Liu

Fudan University

Jun Ma

Southwest University

Xijun Liu

Guangxi University

Ruicong Xie

Tianjin University of Technology

Cooperative Institutions

Chinese Academy of Sciences

293

Center for Special Minimally Invasive and Robotic Surgery

220

University of Chinese Academy of Sciences

138

University of Science and Technology of China

Shanghai Jiao Tong University

Tianjin University of Technology

Zhejiang University

Fudan University

Peking University

Central South University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment

Nanotechnology (2017)

Chao Li Xiao Yan Xiongfei Song Wenzhong Bao Shi‐Jin Ding

Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe2/MoS2 hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe2/SnSe2 heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.

Transconductance

10.1088/1361-6528/aa810f

Cite

Citations (60)

Influence of annealing temperature on thermal stabilities of hydrogenated amorphous carbon on silicon nitride balls

Vacuum (2016)

Lei Huang Juntang Yuan Chao Li Zhenhua Wang Tao Zhou

Amorphous carbon

Carbon nitride

10.1016/j.vacuum.2016.02.017

Cite

Citations (15)

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

Nano Research (2015)

Chao Li Yuan Yao Xi Shen Yanguo Wang Junjie Li

Hafnia

10.1007/s12274-015-0857-0

Cite

Citations (39)

Finite Element Analysis and Optimization of the Truss of Installing Wave-Maker Based on ANSYS

Applied Mechanics and Materials (2013)

Shou Jun Wang Xing Xiong Chao Li

According to uncertainty of the design parameters for large span truss of installing wave-maker, in order to avoid the waste of materials,the truss is analyzed based on the finite element analysis software ANSYS to find out its weaknesses and various parts of the deformation. On the premise of ensuring the intensity and stiffness, the weight of the truss is reduced by adjusting its sizes and selecting different profiles, so as to achieve the optimization of the truss of installing wave-maker.

Installation

10.4028/www.scientific.net/amm.313-314.1038

Cite

Citations (1)

Surface modification of nanodiamonds via grafting of poly(ϵ-caprolactone -co-ethylene glycol)

Materials Chemistry and Physics (2020)

Huimin Guo Chao Li Hongxin Hu Xiaoyan Yu Kimiyoshi Naito

Surface Modification

Particle (ecology)

10.1016/j.matchemphys.2020.123045

Cite

Citations (1)

Te–S covalent bond induces 1T&2H MoS₂ with improved potassium-ion storage performance

Nanoscale (2020)

Wei Kang Ruicong Xie Yuchen Wang Cuihua An Chao Li

Novel Te-MoS₂ materials have been synthesized, in which Te occupies the position of an Mo atom to form Te–S bonds and generated the fractional phase transformation from 2H to 1T.

10.1039/d0nr06775j

Cite

Citations (22)

Beam dynamics performance of the proposed PETRA IV storage ring

arXiv (Cornell University) (2024)

Ilya Agapov Sergey Antipov R. Bartolini R. Brinkmann Y.-C. Chae

The PETRA IV project for upgrading the 2.3 km 6 GeV PETRA III storage ring to a diffraction-limited synchrotron radiation source is nearing the end of its detailed technical design phase. We present the ring lattice based on the hybrid six-bend achromat (H6BA) cell and a detailed evaluation of its beam dynamics performance. Design challenges as well as unique opportunities associated with a low emittance ring of a large size are discussed.

Dynamics

10.48550/arxiv.2408.07995

Cite

Citations (0)

Open-circuit voltage analysis of p—i—n type amorphous silicon solar cells deposited at low temperature

Chinese Physics B (2011)

Jian Ni Jianjun Zhang Yu Cao Xianbao Wang Chao Li

This paper identifies the contributions of p—a—SiC:H layers and i—a—Si:H layers to the open circuit voltage of p—i—n type a—Si:H solar cells deposited at a low temperature of 125 °C. We find that poor quality p—a—SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p—a—SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.

Open-circuit voltage

10.1088/1674-1056/20/8/087309

Cite

Citations (7)

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO₂‐Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)

Advanced Materials (2017)

Chao Li Bin Gao Yuan Yao Xiangxiang Guan Xi Shen

Resistive switching processes in HfO2 are demonstrated by electron holography and in situ energy filtered imaging in article number 1602976 by Jinfeng Kang, Richeng Yu, and co-workers. The results identify that oxygen vacancies are generated gradually in the oxide layer under ramped electrical bias, resulting in the formation of conductive channels, and the switching process occurs at the top interface of the hafnia layer.

Hafnia

Resistive touchscreen

10.1002/adma.201770065

Cite

Citations (4)

Additional file 4: of De novo transcriptome analysis in radish (Raphanus sativus L.) and identification of critical genes involved in bolting and flowering

Figshare (2016)

Shanshan Nie Chao Li Liang Xu Yan Wang Danqiong Huang

Identification of flowering related genes in radish. (XLSX 57 kb)

Raphanus

Bolting

Identification

10.6084/m9.figshare.c.3629909_d2

Cite

Citations (0)