M. A. Makhiboroda

National Research University of Electronic Technology

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N. A. Djuzhev

National Research University of Electronic Technology

G. D. Demin

National Research University of Electronic Technology

E. E. Gusev

National Research University of Electronic Technology

АА

А. А. Дедкова

National Research University of Electronic Technology

P. Yu. Glagolev

National Research University of Electronic Technology

ВА

В. А. Беспалов

National Research University of Electronic Technology

Ilya D. Evsikov

National Research University of Electronic Technology

Tatiana A. Gryazneva

National Research University of Electronic Technology

N. A. Dyuzhev

National Research University of Electronic Technology

E. O. Popov

Ioffe Institute

Cooperative Institutions

National Research University of Electronic Technology

Lomonosov Moscow State University

Russian Academy of Sciences

Moscow State Institute of Electronics and Mathematics

Moscow State University

Institute of Physics

Moscow State Technological University

Moscow Institute of Physics and Technology

MIREA - Russian Technological University

Moscow Polytechnic University

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Electron Energy Conversion to EUV Radiation in the Kα Line of Be in the “Shooting Through” Geometry

Journal of Experimental and Theoretical Physics (2018)

A. Ya. Lopatin D. E. Par’ev А. Е. Пестов Н. Н. Салащенко Н. И. Чхало

Line (geometry)

Solid angle

10.1134/s1063776118100175

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Citations (7)

Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers

N. A. Djuzhev M. A. Makhiboroda E. E. Gusev M. Yu. Fomichev А. А. Дедкова

This paper shows the result of working out the operations of temporary bonding of Si-Si wafers and Si-glass wafers. The influence of materials and parameters of technological operations on the warpage of the resulting structures was investigated in order to reduce the bending of the device wafer when performing the processes of temporary bonding and thinning.

Thinning

Wafer Bonding

Anodic bonding

Wire bonding

10.1117/12.2623584

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The Features of the Current-Voltage Characteristics of Field Emission Metal Cathode Covered by a Nanometer Oxide Layer

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (2016)

В. А. Беспалов N. A. Djuzhev M. A. Makhiboroda G. D. Demin

Based on the Sommerfeld free-electron model, the specifics of field emission from metal cathode covered by nanometer oxide layer into vacuum was theoretically studied by the example of systems «W-WO 3 -vacuum» and «Al-Al 2 O 3 -vacuum». The significant influence of natural oxide on the current-voltage (CV) characteristics in the region of strong electric fields (more than 10 7 V/cm) was investigated, where the transition to the faster current increase in the terms of Fowler-Nordheim (FN) coordinates occurs. At low electric fields (less than 10 7 V/cm) the CV characteristics may be described by the FN formula for the emission current and can be used to estimate the effective barrier height, which is important in selecting a good cathode material.

Nanometre

Vacuum arc

10.4028/www.scientific.net/ssp.247.47

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Citations (1)

Investigation of the thermal degradation of the silicon field-emission cathode as a two-phase system

Russian Microelectronics (2012)

N. A. Dyuzhev M. A. Makhiboroda Vadim Kretov M. N. Churilin V. Yu. Rudnev

Thermal Emission

Degradation

10.1134/s1063739712070189

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Citations (4)

A Study of Field Electron Emission in a Nanoscale Air-Channel Silicon Diode

Nikolai N. Patyukov G. D. Demin Nikolai A. Filippov Nikolai A. Djuzhev M. A. Makhiboroda

Over the past few years, the rapid progress in the field of vacuum nanoelectronics is mainly associated with the emergence of technological methods for the formation of quasi-vacuum (air) nanoscale gap between the emitter and collector (less than 100 nm). Since the probability of ionization of gas molecules on such scales is negligible, it opens up the attractive prospects of creating field-emission devices with an air channel which operate in a THz range under atmospheric conditions. In this work, we experimentally demonstrate the field-emission behavior of a silicon diode with a nanoscale air channel of about 60 nm, which was fabricated on a sapphire substrate by means of focused ion beam (FIB) etching. Based on the density functional theory (DFT) formalism, we also perform the first-principles calculations of the field-emission current in a such diode for ultra-small air-channel lengths (up to the de Broglie wavelength), where a noticeable deviation of the current-voltage (I-V) characteristics from the classical Fowler-Nordheim equation was found. The results obtained can be used for the development of high-speed solid-state nanoelectronic devices with a nanoscale air channel.

Nanoelectronics

Thermionic emission

10.1109/ivnc49440.2020.9203201

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Circuit Models of Field Emission Silicon Diode and Transistor with a Nanoscale Vacuum Channel

Ilya D. Evsikov G. D. Demin P. Yu. Glagolev N. A. Djuzhev M. A. Makhiboroda

Circuit models of field emission silicon diode and transistor with a nanoscale vacuum channel are presented. Parameters of the equivalent circuit of these vacuum devices such as parasitic resistances and capacitances have been calculated to make an analysis of the circuit performance. Models are based on the modified Fowler-Nordheim equation, taking into account the variation of field-enhancement factors from the geometric parameters at the nanoscale. Output current-voltage characteristics of the diode and transistor were calculated using SPICE simulator. The obtained results can found their practical application in the development of a new generation of nanoscale vacuum channel field emission devices.

Spice

Static induction transistor

10.1109/ivnc49440.2020.9203217

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Magnetic Susceptibility of Powders and Magnetic Particles (Modified Inclusions of Iron Oxides) Carbon Sorbents

Applied Mechanics and Materials (2022)

A. A. Sandulyak М. Н. Полисмакова D. A. Sandulyak Alexander Sandulyak R.A. Repetunov

There is a lack of information on the magnetic properties of particles of such materials as powder magnetic (modified by inclusions of magnetite and maghemite) carbon sorbents intended for water purification from various kinds of impurities and, what is especially important, allowing to perform the prompt isolation of the spent sorbent – by magnetic separation. The data on the magnetic susceptibility χ of the particles of these sorbents, found by the developed experimental calculation method based on the concept of the corresponding magnetometry of a moderately rarefied dispersed sample with a dispersed phase of the particles under study, are presented. Experimental dependences of the magnetic susceptibility of < χ >of a dispersed sample on the volume fraction γ of controlled particles in it have been obtained - for different values of the magnetic field strength H in the range from 22 to 61 kA/m, i.e. in the postextremal region for the susceptibility. In addition to the necessary assessment of their linear, located at γ ≤ 0.15-0.2, sections, this also made it possible to find and phenomenologically describe the field dependences of the generalized data of the reduced susceptibility of < χ >/ γ , i.e. data χ : in the form of an inverse power function with a power of 0.7 ... 0.8 at H .

Maghemite

Magnetic separation

10.4028/p-w721c4

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Citations (1)

Non-Contact Technique for Determining the Mechanical Stress in thin Films on Wafers by Profiler

IOP Conference Series Materials Science and Engineering (2017)

N. A. Djuzhev А. А. Дедкова E. E. Gusev M. A. Makhiboroda P. Yu. Glagolev

This paper presents an algorithm for analysis of relief for the purpose of calculating mechanical stresses in a selected direction on the plate in the form of software package Matlab. The method allows for the measurement sample in the local area. It provides a visual representation of the data and allows to get stress distribution on wafer surface. Automated analysis process reduces the likelihood of errors researcher. Achieved time saving during processing results. In carrying out several measurements possible drawing card plate to predict yield crystals. According to this technique done in measurement of mechanical stresses of thermal silicon oxide film on a silicon substrate. Analysis of the results showed objectivity and reliability calculations. This method can be used for selecting the optimal parameters of the material deposition conditions. In software of device–technological simulation TCAD defined process time, temperature and oxidation of the operation of the sample environment for receiving the set value of the dielectric film thickness. Calculated thermal stresses are in the system silicon–silicon oxide. There is a good correlation between numerical simulations and analytical calculation. It is shown that the nature of occurrence of mechanical stress is not limited to the difference of thermal expansion coefficients of materials.

10.1088/1757-899x/189/1/012019

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Citations (5)

Development and Research of Multifrequency X-ray Tube with a Field Nanocathode

Springer eBooks (2017)

Tatiana A. Gryazneva G. D. Demin M. A. Makhiboroda N. A. Djuzhev V. E. Skvorcov

X-ray tube

Sample (material)

10.1007/978-3-319-62870-7_45

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Evaluation of the field-emission characteristics of the different types of triode structure with the nanoscale vacuum channel

N. A. Djuzhev M. A. Makhiboroda Tatiana A. Gryazneva Evgeniy A. Agarkov V. Yu. Kireev

Over the past few years vacuum electronics is becoming one of the most promising directions of modern nanoelectronics, which is connected with the progress in the development of triode semiconductor devices with nanoscale vacuum channel, demonstrating the high performance, resistance to the radiation and aggressive environment, and low power consumption [1-3]. With a decrease of the minimum topological size the important issue is to find the optimal performance of the vacuum triode, providing a stable field emission, taking into account the variation in geometry of the triode structure during the transition to the submicron design rules. In this work the simulation models describing the field-emission characteristics of the three different types of field-emission triode structures with nanoscale vacuum channel are presented: a) for the planar geometry of the cathode and grid electrodes, b) for the vertical geometry of the cathode and with the circular aperture of grid electrode, and c) for the planar geometry of the cathode in the case of isolated grid electrode. Based on these models, the geometrical parameters of the triode structures, allowing achieving maximum amplification of the electric field on the cathode surface with the variation of the cathode radius, the “cathode-anode” and “cathode grid” distances, are found which determines the tendency of the parametric change of the field emission in the process of scaling. As the minimum size of the vacuum triode, the technological design standards typical for the modern microelectronics industry was used in the range from 90 to 22 nm (90 nm, 65 nm, 45 nm, 32 nm and 22 nm).

Triode

Nanoelectronics

Microelectronics

Vacuum tube

10.1109/eiconrus.2017.7910826

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Citations (1)