Charndet Hruanun

National Science and Technology Development Agency

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Co-Authors

Amporn Poyai

National Electronics and Computer Technology Center

Wutthinan Jeamsaksiri

National Electronics and Computer Technology Center

Win Bunjongpru

National Science and Technology Development Agency

Nithi Atthi

National Science and Technology Development Agency

Supanit Porntheeraphat

National Electronics and Computer Technology Center

J. Nukeaw

King Mongkut's Institute of Technology Ladkrabang

Apirak Pankiew

National Science and Technology Development Agency

Chana Leepattarapongpan

National Electronics and Computer Technology Center

Toempong Phetchakul

King Mongkut's Institute of Technology Ladkrabang

E. Chaowicharat

National Electronics and Computer Technology Center

Cooperative Institutions

National Electronics and Computer Technology Center

National Science and Technology Development Agency

King Mongkut's Institute of Technology Ladkrabang

Mahidol University

Thailand Center of Excellence in Physics

National Nanotechnology Center

King Mongkut's University of Technology Thonburi

Ministry of Education

Chinese Academy of Sciences

University of Chinese Academy of Sciences

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Magnetotransistor Based on the Carrier Recombination—Deflection Effect

IEEE Sensors Journal (2010)

Chana Leepattarapongpan Toempong Phetchakul Naritchapan Penpondee Putapon Pengpad Ekalak Chaowicharat

This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect vertical and lateral magnetic field direction. The structure of magnetotransistor consists of one emitter, one collector and one base contact. The devices can detect magnetic field by relying on the difference between base current and collector current (¿I _CB ). The result from experiments closely matched the simulated 3-D modeling with base width of 20 ¿m at substrate thickness of 600 ¿m . From the experiment, the magnetotransistor had the highest sensitivity of 10.25%/T when emitter current was at 10 mA. This research on the three-terminal magnetotransistor can achieve magnetic sensors with small size, high performance and wide range of applications.

10.1109/jsen.2009.2033812

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Citations (14)

An Effect of Viscosity of Coating Materials on Silicon Micro-Patterning Arrays for Superhydrophobic Surface

Advanced materials research (2010)

Nithi Atthi On-Uma Nimittrakoolchai Sitthisuntorn Supothina Jakrapong Supadech Wutthinan Jeamsaksiri

Two different viscous coating materials, which are Polydimethylsiloxane (PDMS) mixed with 10%wt of Dicumylperoxide (DCP), and Semifluorinate Silane (SFS), were applied to silicon micro-asperity. The cosine’s Young and viscosity of those coating materials are -0.3584,-0.3496 and 3.176x10-3, 1.339 x10-3 Pas, respectively. The rough surfaces with nine asperity shapes were studied. The results shown that, pillar shape has an effect on water contact angle (WCA): Stripe asperity cannot make the average WCA greater than 150. When consider the pillar asperity, the WCA falls between 152 and 157, which exhibits a superhydrophobic surface property. However, actual WCA of the micro-asperity coated with PDMS+10%wt of DCP is lower than that coated with SFS around 1 to 7. High viscous material makes the asperity size bigger than the design and decreases the WCA: the low viscous material is more suitable for coating on the asperities.

Asperity (geotechnical engineering)

Polydimethylsiloxane

Pillar

10.4028/www.scientific.net/amr.93-94.447

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Citations (2)

A silicon nitride ISFET based immunosensor for Ag85B detection of tuberculosis

The Analyst (2016)

Pawasuth Saengdee Woraphan Chaisriratanakul Win Bunjongpru Witsaroot Sripumkhai Awirut Srisuwan

An ISFET-based sensor was developed for Ag85B detection by immobilization of anti-Ag85B. The precision (CV%) and accuracy of this sensor were 9.73–10.99% and 95.29%, respectively.

ISFET

10.1039/c6an00568c

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Citations (31)

UV-enhanced photodetector with nanocrystalline-TiO<inf>2</inf> thin film via CMOS compatible process

Win Bunjongpru P. Panprom Supanit Porntheeraphat Rattanawan Meananeatra Wutthinan Jeamsaksiri

This research presents nanocrystal titaniumdioxide (nanocrystal-TiO ₂ ) film deposition technique with CMOS compatible process [1] to extend the optical response bandwidth of silicon based photodetecting devices toward ultraviolet range [2]. The thin films were initially deposited as Titanium Nitride (TiN) using DC magnetron reactive sputtering system. It was then annealed under nitrogen atmosphere at 800°C. After analyzing crystal structures and surface morphology with X-ray diffraction and FE-SEM systems, it was found that the deposited thin films showed the crystal phase of TiO ₂ oriented along (200) plane of Rutile crystal structure with 50 nm grain size and increasing with film thickness. Using electroreflectance (ER) spectroscopy measurement [3], the bandgap of nanocrystal-TiO ₂ was revealed to be 3.16 eV. PN-heterojunction photodiodes were fabricated with Nanocrystal-TiO ₂ /SiO ₂ /p-Si structures. Interdigitated aluminum structures were used as electrodes. By varying the thickness of nanocrystal-TiO ₂ film, i.e. 30, 60, and 90 nm, the devices could response further into the UV range. The absorption edge wavelength investigated by photoresponse measurement was at 275 nm and shifting to the shorter wavelength as a function of the nanocrystal-TiO ₂ grain size due to quantum confinement phenomenon [4]. The nanocrystal-TiO ₂ /SiO ₂ /p-Si photodetector had dark current = 5.31nA (2V), photocurrent = 0.9 uA, rise time = 58 us, fall time = 47 us at 30 nm thickness of TiO ₂ .

Nanocrystalline material

Crystal (programming language)

10.1109/nmdc.2011.6155377

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Citations (6)

Trimming lithography part II: An effect of trimming distance to the sub-resolution pattern quality

Arreerat Sriklat Nithi Atthi Wutthinan Jeamsaksiri Charndet Hruanun Amporn Poyai

Trimming lithography acts as one of the candidates for next generation lithography. The pattern size can be scaled by adjusting the trim distance that is much bigger than an original design linewidth. The photoresist feature size can be scaled down to 0.18 µm with the 0.9 µm mask and the 0.5 µm resolution exposure tool. However, a pattern density of the line/space pattern is lower than that of other patterning techniques. Different pattern qualities between dense and isolated patterns are explained by a diffraction of the waveform transmitted through the mask slit.

Trimming

Laser linewidth

Photoresist

Trim

Next-generation lithography

Extreme Ultraviolet Lithography

Computational lithography

10.1109/ecticon.2011.5947767

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A disposable polydimethylsiloxane (PDMS) microdevices for DNA amplification with low power consumption

A. Lekwichai Supanit Porntheeraphat Win Bunjongpru Jakrapong Supadech W. Sripumkhai

Polymerase Chain Reaction (PCR) microchip has become an important tool in a molecular biological research. Many researchers have attempt to improve the efficiency of the device in terms of type of materials, fabrication process, temperature control system, design of the device, detection methods, etc. In this study, we demonstrate the disposable polydimethylsiloxane (PDMS) microchip provided for DNA amplification. The devices consists of two mainly parts, first part is PDMS static chamber that casting on Silicon (Si) mold that bonded with thin glass sheet by RF plasma cleaner. The other parts are Pt-microheater and Pt-temperature sensor on SiO ₂ /Si substrate. The thin film Pt-microheater and Pt-temperature sensor (RTD) were fabricated with CMOS compatible process. In the results, with 10 ¿l of PCR mixture volume, the approximately 700 bp DNA were successfully amplified within 50 minutes by 32 PCR cycles. The amplified products were comparable with conventional method by agarose gel electrophoresis method. With this PCR chip we can save cost by reducing the reagents volume, time consuming and repeatable fabrication. Further information about microchip fabrication and application will be presented.

Microheater

Polydimethylsiloxane

Lab-on-a-Chip

10.1109/inec.2010.5424800

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A Disposable Polydimethylsiloxane Microdevice for DNA Amplification

Advanced materials research (2010)

A. Lekwichai Supanit Porntheeraphat Win Bunjongpru W. Sripumkhai Jakrapong Supadech

In this study, we demonstrate the disposable polydimethylsiloxane (PDMS) microchip provided for DNA amplification. The device consists of two main parts. The first part is PDMS/glass stationary chamber, the other part is a temperature-control microdevice on SiO2/Si substrate. This device consists of a thin film Pt-microheater and a Pt-temperature sensor, which were fabricated with CMOS compatible process. The performance of the device in the DNA amplification shows that, with 10 μl of PCR mixture volume, the approximately 700 bp DNA were successfully amplified within 50 minutes by 30 PCR cycles. The amplified products were comparable with those of a conventional method using electrophoresis. The PCR chip is also suitable for mass production.

Microheater

Polydimethylsiloxane

Lab-on-a-Chip

10.4028/www.scientific.net/amr.93-94.105

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Citations (1)

The low power 3D-magnetotransistor based on CMOS technology

Chana Leepattarapongpan Toempong Phetchakul Naritchaphan Penpondee Puttapon Pengpad Arckom Srihapat

This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B _X , B _Y , and B _Z ) by relying on the difference between base and collector currents (ΔI _CB ). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively.

Biasing

10.1109/icsens.2011.6127079

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Citations (5)

A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect

Microelectronics Journal (2014)

Chana Leepattarapongpan Toempong Phetchakul Naritchaphan Penpondee Puttapon Pengpad Arckom Srihapat

This article presents a novel magnetotransistor based on carrier recombination–deflection effect for detecting magnetic field in three dimensions (BX, BY, and BZ) by relying on the difference between base and collector currents (∆ICB). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and B−Z direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.

Biasing

Carrier lifetime

10.1016/j.mejo.2014.03.016

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Citations (5)

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

Advanced materials research (2010)

Apirak Pankiew Win Bunjongpru N. Somwang Supanit Porntheeraphat Sirapat Pratontep

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

Diffusion barrier

Barrier layer

Cavity magnetron

10.4028/www.scientific.net/amr.93-94.578

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