A. F. Basile

University of Bologna

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P. M. Mooney

Columbia University

G. Verzellesi

University of Modena and Reggio Emilia

L. C. Feldman

Rutgers, The State University of New Jersey

Sarit Dhar

Auburn University

John R. Williams

Hemel Hempstead Hospital

A. Cavallini

University of Bologna

C. Canali

Berlin University of the Arts

John Rozen

IBM Research - Thomas J. Watson Research Center

Zenan Jiang

University of British Columbia

Andrea Mazzanti

University of Pavia

Cooperative Institutions

European Organization for Nuclear Research

A. Alikhanyan National Laboratory

University of Adelaide

Institute of High Energy Physics

University of Glasgow

University of Florence

Istituto Nazionale di Fisica Nucleare

Istituto Nazionale di Fisica Nucleare, Sezione di Padova

Centre National de la Recherche Scientifique

University of Padua

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Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 114115 (2011)]

Journal of Applied Physics (2012)

A. F. Basile P. M. Mooney

Low-temperature capacitance-voltage (C-V) characteristics of n-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors, presented by Paterson et al. [J. Appl. Phys. 110, 114115 (2011)], are modeled by analytical and numerical calculations of the capacitance taking into account the slow response of neutral donors and interface traps to the measurement test signal. This model provides an explanation for the absence of the dip near flat band in the high frequency C-V characteristics, contrary to the prediction based on the ideal MOS capacitance. These calculations also show that a broad energy distribution of interface-traps can explain the broadening of the C-V curve.

Admittance

10.1063/1.4756042

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Citations (2)

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Applied Surface Science (2014)

Gang Liu Yi Xu Can Xu A. F. Basile Feng Wang

10.1016/j.apsusc.2014.10.113

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Citations (13)

Near-Interface Defects in SiO$_{2}$/SiC MOS Devices

Bulletin of the American Physical Society (2012)

A. F. Basile P. M. Mooney

Interface (matter)

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Study on Degradation of Gate-Length Dependence of Transconductance in AlGaN/GaN HFETs with Nanometer-Size Gates

IEICE technical report. Electron devices (2006)

Seiya Kasai A. F. Basile Tamotsu Hashizume

Transconductance

Degradation

Nanometre

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Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs

A. F. Basile G. Verzellesi Claudio Canali A. Cavallini A. Castaldini

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Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

Journal of Applied Physics (2014)

A. F. Basile Tobias Cramer Adrica Kyndiah Fabio Biscarini Beatrice Fraboni

Metal-oxide-semiconductor (MOS) transistors fabricated with pentacene thin films were characterized by temperature-dependent current-voltage (I-V) characteristics, time-dependent current measurements, and admittance spectroscopy. The channel mobility shows almost linear variation with temperature, suggesting that only shallow traps are present in the semiconductor and at the oxide/semiconductor interface. The admittance spectra feature a broad peak, which can be modeled as the sum of a continuous distribution of relaxation times. The activation energy of this peak is comparable to the polaron binding energy in pentacene. The absence of trap signals in the admittance spectra confirmed that both the semiconductor and the oxide/semiconductor interface have negligible density of deep traps, likely owing to the passivation of SiO2 before pentacene growth. Nevertheless, current instabilities were observed in time-dependent current measurements following the application of gate-voltage pulses. The corresponding activation energy matches the energy of a hole trap in SiO2. We show that hole trapping in the oxide can explain both the temperature and the time dependences of the current instabilities observed in pentacene MOS transistors. The combination of these experimental techniques allows us to derive a comprehensive model for charge transport in hybrid architectures where trapping processes occur at various time and length scales.

Pentacene

Organic semiconductor

Passivation

10.1063/1.4884855

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Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs

R. Pierobon Fabiana Rampazzo Gaudenzio Meneghesso E. Zanoni J. Bernát

Wide-bandgap semiconductor

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces

Journal of Applied Physics (2012)

A. F. Basile P. M. Mooney

A procedure to calculate capacitance-voltage (C-V) characteristics from numerical solutions of the Poisson equation for metal-oxide-semiconductor (MOS) capacitors with traps located both at the oxide/semiconductor interface and in the semiconductor is presented. This method is tested for the simple case of a uniform distribution of a single acceptor or donor level in the semiconductor, for which an approximate analytical solution was derived by analogy with the results obtained for a Schottky diode within the depletion approximation. This method is then applied to model the high-frequency C-V curves of n-type 4H- and 6H-SiC MOS capacitors, which show a kink at depletion bias voltages that broadens with decreasing temperature below 150 K. This feature of the high-frequency capacitance occurs at the same temperature and voltage range as a signal detected by constant capacitance deep-level-transient spectroscopy (CCDLTS) measurements and attributed to SiC traps. When only interface traps are considered, the trap energy distribution that is required to reproduce the kink in the C-V curves is not consistent with the trap energy distribution determined from CCDLTS measurements. Numerical simulations show that traps in the SiC epi-layer near the SiO2/SiC interface as well as interface traps with energies close to the SiC conduction band are necessary to explain both the CCDLTS measurement results and the temperature dependence of C–V curves.

Depletion region

Deep-level transient spectroscopy

10.1063/1.4712431

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Citations (12)

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Journal of Applied Physics (2011)

A. F. Basile John Rozen John R. Williams L. C. Feldman P. M. Mooney

Metal-oxide-semiconductor (MOS) interfaces on n-type 4H and 6H-SiC annealed in nitric oxide (NO) for various times were electrically characterized by high-frequency capacitance-voltage and deep-level-transient spectroscopy (DLTS) measurements. Different types of traps were distinguished by DLTS based on the energy-resolved DLTS spectra and comparing DLTS spectra from the two polytypes. Oxide traps, found at much higher densities in the larger bandgap 4H-SiC, are reduced by NO annealing, and their capture behavior is analytically modeled with a tunneling-dependent capture rate. An interface trap distribution is found in 6H-SiC MOS centered at 0.5 eV below the conduction band. Near interface traps in the SiC within 0.1 eV below the conduction band edge, detected at equal concentrations in both polytypes, are not passivated by NO annealing.

Deep-level transient spectroscopy

Wide-bandgap semiconductor

10.1063/1.3552303

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Citations (56)

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Materials science forum (2010)

A. F. Basile John Rozen X.D. Chen Sarit Dhar John R. Williams

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Deep-level transient spectroscopy

10.4028/www.scientific.net/msf.645-648.499

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Citations (8)