A. J. Gonzales

Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier

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P. A. Seese

Motorola (United States)

M. W. Powell

IBM (United States)

Casey Walker

Brigham Young University

John N. Helbert

Motorola (United States)

Elliott Philofsky

Advanced Ceramics Manufacturing (United States)

Vítor Sencadas

University of Wollongong

T. Rada

Universidad del Norte

D. L. Tolliver

Laser Operations (United States)

K. Mosig

Infineon Technologies (Germany)

N. Sylla

Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier

Cooperative Institutions

Motorola (United States)

University of Minho

Vanderbilt University

Helmholtz-Zentrum Berlin für Materialien und Energie

Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier

Université de Montpellier

Centre National de la Recherche Scientifique

IBM (United States)

Universidade do Porto

Peabody

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Screen-printed textile substrates’ suitability as a platform for electrochemical sensors’ construction

Journal of Electroanalytical Chemistry (2024)

Nuna G. Costa Cláudia S. Buga Natália C. Homem Antonio J. Paleo Vítor Sencadas

Textile

10.1016/j.jelechem.2024.118805

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Citations (0)

Improved integrated circuit failure analysis using SEM video processing

Journal of Vacuum Science and Technology (1978)

A. J. Gonzales M. W. Powell

Video processing of voltage contrast information from the scanning electron microscope is used to reduce unnecessary information in order to enhance voltage contrast effects and pattern recognition. A video comparator is employed to sample the video information of any two portions of the device operating cycle. The comparator output is the algebraic difference of the two samplings thereby producing an image of areas that have changed between samplings. Unchanged areas appear gray, whereas bright and dark areas indicate shifts towards a more negative or positive potential. By suppressing static areas, small detail and logical patterns are easily distinguished even at low magnification. Synchronization of the comparator samplings to the device operation cycle isolates specific IC logic functions. The comparator which operates at video frequencies is extended to give a time resolution of one nanosecond by the addition of SEM stroboscopic techniques.

10.1116/1.569608

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Citations (8)

A scanning electron microscope study of electromigration in an Al-2% Cu thin film

Journal of Electronic Materials (1972)

E. L. Hall Elliott Philofsky A. J. Gonzales

Electromigration

Electron beam-induced current

10.1007/bf02660140

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Citations (9)

Toward an affordable and user-friendly visual motion capture system

Vincent Bonnet N. Sylla Andrea Cherubini A. J. Gonzales Ch. Azevedo Coste

The present study aims at designing and evaluating a low-cost, simple and portable system for arm joint angle estimation during grasping-like motions. The system is based on a single RGB-D camera and three customized markers. The automatically detected and tracked marker positions were used as inputs to an offline inverse kinematic process based on bio-mechanical constraints to reduce noise effect and handle marker occlusion. The method was validated on 4 subjects with different motions. The joint angles were estimated both with the proposed low-cost system and, a stereophotogrammetric system. Comparative analysis shows good accuracy with high correlation coefficient (r= 0.92) and low average RMS error (3.8 deg).

Motion Capture

RGB color model

10.1109/embc.2014.6944410

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Citations (9)

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Thin Solid Films (2013)

Th. Dittrich A. J. Gonzales T. Rada T. Rissom Elisabeth Zillner

Surface Photovoltage

Passivation

Deposition

10.1016/j.tsf.2012.12.078

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Citations (29)

<title>Intralevel Hybrid Resist Process With Submicron Capability</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1982)

John N. Helbert P. A. Seese A. J. Gonzales Casey Walker

A hybrid lithographic process, utilizing both e-beam and conventional optical exposure techniques within the same device level, has been developed using a commercially available positive photoresist. Following E-beam exposure of the < 3.0 micron geometries and optical exposure of the larger sized patterns, both sets of images are developed in a single development. Using this process, working CMOS devices have been fabricated with polysilicon gate lengths of 0.75 and 0.50 micron. The effect of E-beam dosage upon the submicron gate critical dimensions has been determined as well as other processing characteristics.

Photoresist

10.1117/12.933408

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Citations (2)

Applications of scanning electron microscopy to thin film studies on semiconductor devices

Proceedings of the IEEE (1971)

A. J. Gonzales Elliott Philofsky

Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl 2 ) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique.

Nichrome

Fuse (electrical)

Electron beam-induced current

10.1109/proc.1971.8450

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Citations (13)

Resolution of MOS one-transistor, dynamic RAM bit failures using SEM stroboscopic techniques

Journal of Vacuum Science and Technology (1978)

A. J. Gonzales M. W. Powell

Stroboscopic techniques are used to allow the scanning electron microscope (SEM) to function as an electronic probe with a spatial resolution of 0.2 μm2 and a time resolution of 0.3 ns. The causes of ’’row’’ and ’’single-bit’’ failures in the one-transistor, dynamic random-access-memory (RAM) are resolved using the SEM electronic probe technique.

Stroboscope

Dynamic random-access memory

Bit (key)

10.1116/1.569732

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Citations (5)

Internal waveform measurements of the MOS three-transistor, dynamic RAM using S.E.M. stroboscopic techniques

International Electron Devices Meeting (1975)

A. J. Gonzales M. W. Powell

Stroboscopic electron beam blanking of a conventional SEM was employed to analyze high speed dynamic RAM operations. In the system described a time resolution of 20 nanoseconds was used to produce voltage contrast (V.C.) images of single events. Also the SEM was operated as a sampling oscilloscope to display timing waveforms from individual circuit nodes. Several types of 4K RAM (MCM6605) operations were analyzed to evaluate this technique in debugging MOS LSI circuits. The operations analyzed were memory cell timing waveforms, data-node storage, and node bootstrapping. The interaction of the SEM with the MCM6605 operation was also analyzed.

Blanking

Dynamic random-access memory

Stroboscope

10.1109/iedm.1975.188839

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Citations (11)

Reliability studies utilizing rapid-scan microscopy

International Electron Devices Meeting (1970)

A. J. Gonzales C. J. Varker

The conventional slow-scanning electron-microscope system has permitted limited monitoring of dynamic events. The information is recorded on sheet photographic film requiring 30-60 sec exposure time. A newly developed rapid-scan electron-microscope system that operates at conventional TV scan rates permits real-time observation of physical mechanisms and electrical effects.

10.1109/iedm.1970.188246

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