Nicolò Piluso

STMicroelectronics (Switzerland)

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Francesco La Via

Institute for Microelectronics and Microsystems

Ruggero Anzalone

STMicroelectronics (Italy)

Massimo Camarda

Institute for Microelectronics and Microsystems

Andrea Severino

STMicroelectronics (Italy)

Antonino La Magna

Institute for Microelectronics and Microsystems

Giuseppe D’Arrigo

Institute for Microelectronics and Microsystems

Andrea Canino

Enel (Italy)

Simona Lorenti

STMicroelectronics (Czechia)

Marco Mauceri

Società per l’Assistenza al Malato Oncologico Terminale

Patrick Fiorenza

Institute for Microelectronics and Microsystems

Cooperative Institutions

University of Catania

Institute for Microelectronics and Microsystems

STMicroelectronics (Italy)

Istituto Nazionale di Fisica Nucleare, Sezione di Catania

National Research Council

STMicroelectronics (Switzerland)

STMicroelectronics (Czechia)

Centre National de la Recherche Scientifique

Istituto Nazionale di Fisica Nucleare

Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud

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Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

Materials science forum (2012)

Massimo Camarda Ruggero Anzalone Nicolò Piluso Andrea Severino Andrea Canino

Using several characterization techniques (μ-Raman, mechanical profilometer and microstructure deflections) together with a recent stress model[ ] we study the heteroepitaxial growth of cubic silicon carbide on silicon (100). We show that the observed inconsistency between experimental results might be the result of defects generated on the silicon substrate during the carbonization process. In such a situation wafer curvature techniques do not allow the determination of the stress field in the grown films neither quantitatively nor qualitatively.

Characterization

Stress field

10.4028/www.scientific.net/msf.717-720.517

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Citations (3)

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Materials science forum (2018)

Ruggero Anzalone Nicolò Piluso Grazia Litrico Simona Lorenti Giuseppe Arena

In this work a comparison between different 6 inches 4H-SiC commercial substrates after post processing has been shown. The main comparison was done between two different suppliers after a thinning process that leaves the sample with a final thickness of 150 microns. After the processing the two substrates show different behavior with different curvature and residual stress. X-Ray diffraction show different crystal quality and curvature values of the substrates. Micro-Raman show different residual stress of the substrates before and after the thinning process. Moreover, molten KOH etching for dislocation detection also show different value of dislocation density for both substrates.

Thinning

Stress relaxation

Radius of curvature

10.4028/www.scientific.net/msf.924.535

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Citations (8)

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)

Materials science forum (2010)

Giuseppe D’Arrigo Andrea Severino G Milazzo Corrado Bongiorno Nicolò Piluso

3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better compliance between Si and 3C-SiC. We present here an approach to favorite defect geometrical reduction in both [ ] and [ ] directions by creating Inverted Silicon Pyramids (ISP). A study of 3C-SiC growth on ISP is reported showing benefits in the film quality and a reduction in the linear density of stacking faults. Growth on ISP leads also to a decrease in the 3C-SiC residual stress as well as in the bow of the Si/SiC system.

10.4028/www.scientific.net/msf.645-648.135

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Citations (11)

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of Applied Physics (2014)

Nicolò Piluso Massimo Camarda Francesco La Via

A novel Micro-Raman technique was designed and used to detect extended defects in 4H-SiC homoepitaxy. The technique uses above band-gap high-power laser densities to induce a local increase of free carriers in undoped epitaxies (n < 1016 at/cm−3), creating an electronic plasma that couples with the longitudinal optical (LO) Raman mode. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) increases as the free carrier density increases. Crystallographic defects lead to scattering or recombination of the free carriers which results in a loss of coupling with the LOPC, and in a reduction of the Raman shift. Given that the LO phonon-plasmon coupling is obtained thanks to the free carriers generated by the high injection level induced by the laser, we named this technique induced-LOPC (i-LOPC). This technique allows the simultaneous determination of both the carrier lifetime and carrier mobility. Taking advantage of the modifications on the carrier lifetime induced by extended defects, we were able to determine the spatial morphology of stacking faults; the obtained morphologies were found to be in excellent agreement with those provided by standard photoluminescence techniques. The results show that the detection of defects via i-LOPC spectroscopy is totally independent from the stacking fault photoluminescence signals that cover a large energy range up to 0.7 eV, thus allowing for a single-scan simultaneous determination of any kind of stacking fault. Combining the i-LOPC method with the analysis of the transverse optical mode, the micro-Raman characterization can determine the most important properties of unintentionally doped film, including the stress status of the wafer, lattice impurities (point defects, polytype inclusions) and a detailed analysis of crystallographic defects, with a high spectral and spatial resolution.

10.1063/1.4899985

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Citations (13)

4H-SiC Defects Evolution by Thermal Processes

Materials science forum (2017)

Nicolò Piluso Maria Ausilia di Stefano Simona Lorenti Francesco La Via

4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.

Power density

10.4028/www.scientific.net/msf.897.181

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Citations (5)

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application

Materials science forum (2012)

Ruggero Anzalone Giuseppe D’Arrigo Massimo Camarda Nicolò Piluso Andrea Severino

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication, but the high residual stress created during the film grow limits the development of the material for these applications. In this work, in order to evaluate the amount of residual stress released from the epi-film, different micro-machined structures were developed. Through the measurement of natural resonant frequencies and Raman shift analysis, a strong relationship between the mechanical proprieties of the material (Young’s modulus) and the film crystal quality (defect density) was observed.

Nanoelectromechanical systems

10.4028/www.scientific.net/msf.711.51

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Citations (5)

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

Materials science forum (2020)

Nicolò Piluso Stefania Rinaldi Simona Lorenti Anna Bassi Andrea Severino

It is commonly thought that, in the development of SiC power devices with low on-state resistance (R on ), several critical processes in the device fabrication line can strongly impact the final warpage of wafers. High warpage would lead to bad definition of masks, preventing uniform deposition of resist materials and disturbing the normal handling procedures. All these factors would then result in a potential decrease of the electrical yield of the devices, especially for MOSFETs. This study reveals the lack of correlation between critical line processes such as epitaxial growth, oxidations, ion implantations, annealing processes with the final bending of wafers. Conversely, a strong dependence with the resistivity of the substrates is observed. A new parameter defined as RMR (Resistivity Modulation Rate) is taken proposed and, together with the starting value of ingot resistivity, this parameter shows a strong relationship with the final warpage after wafer thinning. A safe region having warpage low enough to allow the workability of the wafers is found.

10.4028/www.scientific.net/msf.1004.57

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Citations (2)

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum (2024)

Domenica Raciti Ruggero Anzalone Mathias Isacson Nicolò Piluso Andrea Severino

The effect of increasing Buffer Layer (BL) thickness on crystal defectivity has been investigated in 4° off-axis 4H-SiC homoepitaxy on 200mm substrates coming from different suppliers. The results, based on optical microscopy and scatter light methods, show a slight increase in morphological defects in the case of a thicker BL with respect to the standard thickness for both suppliers.

Buffer (optical fiber)

10.4028/p-knj9ce

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Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)

Materials science forum (2013)

Filippo Giannazzo Ioannis Deretzis Antonino La Magna Salvatore Di Franco Nicolò Piluso

Two dimensional maps of the electronic conductance in epitaxial graphene (EG) grown on SiC were obtained by conductive atomic force microscopy (CAFM). The correlation between morphological and electrical maps revealed the local conductance degradation in EG over the SiC substrate steps or at the junction between monolayer (1L) and bilayer (2L) graphene regions. The effect of steps strongly depends on the charge transfer phenomena between the step sidewall and graphene, whereas the resistance increase at 1L/2L junction is a purely quantum mechanical effect, due to the weak coupling between 1L and 2L electron wavefunctions.

Bilayer graphene

10.4028/www.scientific.net/msf.740-742.113

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Citations (2)

Thermal Annealing of High Dose P Implantation in 4H-SiC

Materials science forum (2019)

Cristiano Calabretta Massimo Zimbone E. G. Barbagiovanni Simona Boninelli Nicolò Piluso

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

10.4028/www.scientific.net/msf.963.399

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Citations (6)