M.G. Takwale

Savitribai Phule Pune University

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V. G. Bhide

Savitribai Phule Pune University

B. R. Marathe

Savitribai Phule Pune University

Sandesh Jadkar

Savitribai Phule Pune University

K. C. Mohite

The Bhandarkar Oriental Research Institute

Jaydeep V. Sali

North Maharashtra University

Chitra Agashe

Savitribai Phule Pune University

Seyed Mohammad Rozati

University of Guilan

S. Mirzapour

Savitribai Phule Pune University

Y.B. Khollam

Dr. D. Y. Patil Medical College, Hospital and Research Centre

Chandrashekhar M. Mahajan

Savitribai Phule Pune University

Cooperative Institutions

Savitribai Phule Pune University

National Chemical Laboratory

Indian Institute of Technology Bombay

G.S. Science, Arts And Commerce College

Hanyang University

UGC DAE Consortium for Scientific Research

Bhabha Atomic Research Centre

Centre for Materials for Electronics Technology

Centre National de la Recherche Scientifique

University Grants Commission

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Interelectrode separation effects on a-SiGe:H films prepared by plasma chemical vapor deposition

Thin Solid Films (1998)

Jaydeep V. Sali Abduljabbar Rashad B. R. Marathe M.G. Takwale K.D Gangurde

Photosensitivity

Deposition

10.1016/s0040-6090(97)00945-0

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Citations (1)

Fukushima to Jaitapur: Battling fear of unknown

Radiation Protection and Environment (2011)

TusharP Ghate M.G. Takwale S.D. Dhole

After-Fukushima incident, various concerns were raised by public and media about the safety of nuclear installations operating all around the world. All nuclear related eventualities of the past were meshed with the present, adding disproportionate factors, unrealistic conclusions were framed based mostly on notions. Fear of unknown radiation syndrome has played up on the minds of common man. India, on a verge of entering path-breaking nuclear energy arena, obviously could not be isolated from such concerns. Such issues were discussed with ongoing protests at Jaitapur and Kudankulam. This paper discusses various concerns expressed after Fukushima incident, overview on proposed Jaitapur nuclear power plant and justifications to the raised concerns.

10.4103/0972-0464.101687

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Citations (1)

CW CO₂laser annealing of boron-doped polycrystalline silicon

Journal of Physics D Applied Physics (1988)

V.M. Arole M.G. Takwale Satishchandra Ogale V. G. Bhide

CW CO2 laser annealing of boron-doped polycrystalline silicon at various substrate temperature, from room temperature to 600 degrees C, is reported. The overall improvement in charge carrier conduction of polycrystalline silicon is shown to occur at a substrate temperature of 200 degrees C, where the maximum improvement is observed in the charge carrier mobility. These changes in the electrical properties of polycrystalline silicon are correlated with the structural modifications occurring due to laser annealing, as observed by scanning electron microscopy and X-ray diffraction. The simultaneous changes in the electrical and structural properties of polycrystalline silicon are thus carefully studied and reported.

Polycrystalline silicon

10.1088/0022-3727/21/12/016

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The effect of substrate temperature on HW-CVD deposited a-SiGe:H films

Journal of Non-Crystalline Solids (2002)

Sandesh Jadkar Jaydeep V. Sali S. T. Kshirsagar M.G. Takwale

10.1016/s0022-3093(01)01158-9

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Citations (7)

Effect of intermittent spray on optoelectronic properties of ZnO nanocrystallites synthesized by chemical spray pyrolysis

International Workshop on Physics of Semiconductor Devices (2007)

Chandrashekhar M. Mahajan M.G. Takwale

Nanocrystalline ZnO films were synthesized by a chemical spray pyrolysis of zinc acetate solution. The deposition temperature (450degC) was kept constant by obstructing the spray after regular intervals. The XRD patterns of ZnO films were preferably oriented along c-axis (0 0 2) plane with the hexagonal wurtzite structure. The dependence of texture coefficient (TC) and standard deviation (sigmag) on spray obstruction time was also studied. The films synthesized were highly transparent (>94%) and conductive (dark conductivity 24.67 Omega-cm). The energy gap of the film was found to vary between 3.18 eV to 3.22 eV. The variation in sheet resistance (Omega/ ) and figure of merit (Phi _TC ) was also studied in view of their possible applications in optoelectronic devices.

Wurtzite crystal structure

Nanocrystalline material

Figure of Merit

Texture (cosmology)

Spray pyrolysis

10.1109/iwpsd.2007.4472671

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Citations (3)

Preparation and Characterizatio nof Indium Tin Oxide (In2O3: Sn) Thin Films Deposited by Electron Beam Technique

Elsevier eBooks (2000)

Seyed Mohammad Rozati M.G. Takwale

Indium tin oxide

Deposition

10.1016/b978-008043865-8/50411-6

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Effect of laser annealing on spray-deposited CdS films

Journal of Materials Science Letters (1987)

Shailaja Kolhe V. J. Hasabnis S. K. Kulkarni M.G. Takwale B. R. Marathe

Materials processing

10.1007/bf01729425

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Citations (4)

Intermittent spray pyrolytic growth of nanocrystalline and highly oriented transparent conducting ZnO thin films: Effect of solution spray rate

Journal of Alloys and Compounds (2013)

Chandrashekhar M. Mahajan M.G. Takwale

Nanocrystalline material

Pyrolytic carbon

10.1016/j.jallcom.2013.08.136

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Citations (21)

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

MRS Proceedings (1992)

Seyed Mohammad Rozati S. Mirzapour M.G. Takwale B. R. Marathe V. G. Bhide

Deposition

Tin oxide

10.1557/proc-242-755

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Citations (1)

Hydrogen-Induced Structural Changes in Polycrystalline Silicon as Revealed by Positron Lifetime Spectroscopy

physica status solidi (a) (1989)

V.M. Arole M.G. Takwale V. G. Bhide A. D. Shaligram S.K. David

Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon water, brought about by hydrogen passivation. Um die schädlichen Einflüsse von Korngrenzen zu verringern, wird eine Wasserstoffpassivierung an polykristallinen Siliziumwafern durchgeführt. Die Prozeßparameter werden während der Wasserstoffpassivierung systematisch geändert und die Ergebnisse der Raumtemperaturwiderstandsmessungen mitgeteilt. Als effizientes Mittel zur Untersuchung von Strukturünderungen werden spektroskopische Messungen der Positronenlebensdauer an ursprünglichen und hydrogenierten polykristallinen Siliziumwafern durchgeführt und es wird eine systematische Korrelation zwischen den Ánderungen, die in den elektrischen und strukturellen Eigenschaften von polykristallinen Siliziumwafern infolge der Wasserstoffpassivierung stattfinden, gesucht.

Polycrystalline silicon

Passivation

10.1002/pssa.2211110208

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Citations (1)