R. Menna

Princeton University

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Co-Authors

J.C. Connolly

Photonic Systems (United States)

Ramon U. Martinelli

Princeton University

D.Z. Garbuzov

Princeton University

S.Y. Narayan

Government Medical College

G.H. Olsen

Sensors (United States)

M. Maiorov

Laser Operations (United States)

P. K. York

Princeton University

V. Khalfin

Princeton Optronics (United States)

Louis A. DiMarco

Princeton Lightwave (United States)

A. R. Sugg

Vega Wave Systems (United States)

Cooperative Institutions

Princeton University

RCA (United States)

Sarnoff Cardiovascular Research Foundation

United States Naval Research Laboratory

SRI International

Princeton Lightwave (United States)

Sensors (United States)

Stanford University

V.F. Corporation (United States)

Optical Sciences (United States)

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Room-temperature diode lasers operating at 2.78 μm for enhanced CO 2 detection

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1995)

P. K. York D.Z. Garbuzov Hao Lee Ramon U. Martinelli R. Menna

We describe room-temperature 2.78-micrometers AlGaAsSb/InGaAsSb multi-quantum well lasers. Pulsed laser operation was observed with threshold currents of 1.1 A, a maximum power output of 95 mW, and a maximum differential quantum efficiency of 9%. Lasers operated pulsed up to 60 degree(s)C with a characteristic temperature of 58 K over the range of 0 - 40 degree(s)C. Continuous wave operation was observed up to 200 K, with a peak emission wavelength of 2.665 micrometers . To date, 2.78 micrometers is the longest emission wavelength for a room-temperature III-V laser.

Continuous wave

Operating temperature

Atmospheric temperature range

10.1117/12.205549

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Citations (0)

Sensitive detection of ammonia absorption by using a 1.65 μm distributed feedback InGaAsP diode laser

Infrared Physics & Technology (1995)

P. Cancio C. Corsi Francesco S. Pavone Ramon U. Martinelli R. Menna

Torr

10.1016/1350-4495(95)00036-x

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Citations (16)

High-power, single-frequency operation of an InGaAsP/InGaAs active-grating surface emitting amplifier at λ=1.7 μm

Applied Physics Letters (1993)

N. W. Carlson R. Menna P. Gardner S.K. Liew J. T. Andrews

We have demonstrated high-power, single-wavelength cw operation of an InGaAsP/InGaAs strained-layer multi-quantum-well active-grating surface-emitting amplifier operating at a wavelength of 1.7 μm. Single-wavelength operation was obtained with 38 dB suppression of amplified spontaneous emission at 107 mW cw power output.

Active layer

10.1063/1.109515

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Citations (3)

Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1993)

N. W. Carlson So K. Liew R. Menna P. Gardner James T. Andrews

The design and operating characteristics of strained-layer InGaAsP/InGaAs active-grating surface-emitting amplified diode lasers are presented. For the first time, we report cw operation of an active-grating amplifier at a single wavelength of 1.7 micrometers with a cw power output in excess of 100 mW. In addition, we discuss, theoretically, the possibility of laterally scaling these devices using antiguided laser-array structures.

Active layer

Indium gallium arsenide

10.1117/12.146932

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Citations (1)

GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates

Electronics Letters (1989)

J.C. Connolly N. Dinkel R. Menna J. T. Andrews

A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.

Laser diode

10.1049/el:19890604

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Citations (1)

Effect of heterobarrier leakage on the performance of high power 1.5-μm InGaAsP multiple quantum well lasers

Gregory Belenky L. Shterengas W. Trussell R. Menna D. Donetsky

Eye-safe semiconductor lasers are in demand for development of laser range finder and countermeasure systems. These applications require high level of pulsed optical power. We carried out a comprehensive study of the nature of power saturation in 1.5-/spl mu/m high power InGaAsP/InP multiple quantum well two step graded SCH lasers. We calculated the internal efficiency normalized to its threshold value for narrow waveguide devices from both the experimental L-I curves and the simulation results. The modeling explains qualitatively all experimental observations. The quantitative discrepancy can be understood taking into account two factors: device overheating even for short pulse operation at high current densities and the increase of the internal loss with current above threshold.

Overheating (electricity)

Leakage (economics)

Saturation (graph theory)

10.1109/leos.2000.894132

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Citations (2)

Design of an open path near-infrared diode laser sensor: application to oxygen, water, and carbon dioxide vapor detection

Applied Optics (1994)

Haris Riris C. B. Carlisle Lewis W. Carr David E. Cooper Ramon U. Martinelli

An open path diode laser sensor was constructed with near-infrared diode lasers and two-tone frequency-modulation spectroscopy. The sensor incorporates several novel features (such as digital signal-processing algorithms, a computerized line-locking routine, and discontinuous wavelength scanning) that are important in a field instrument. The sensor was used to monitor oxygen, water, and carbon dioxide in the near-infrared spectral range. For oxygen, an absorbance detection sensitivity of 2 × 10(-6) in a 10-Hz bandwidth was demonstrated with a GaALAs laser at 760.56 nm. The stability of the sensor was 0.1% over a period of 10 h when an absorbance of 6 × 10(-3) was monitored.

Absorbance

Optical path

10.1364/ao.33.007059

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Citations (38)

Type-II mid-infrared lasers

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2000)

J. R. Meyer W. W. Bewley I. Vurgaftman C.L. Felix L. J. Olafsen

Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the first III-V interband lasers to achieve room-temperature pulsed operation at a wavelength longer than 3 micrometers . For cw operation, T_max was 195 K and P_out equals 140 mW was measured at 77 K. Optically- pumped W lasers recently attained the highest cw operating temperatures (290 K) of any semiconductor laser emitting in the 3 - 6 micrometers range. For a (lambda) equals 3.2 micrometers device at 77 K, the maximum cw output power was 0.54 W per uncoated facet. In order to maximize the absorption of the pump in the active region, an optical pumping injection cavity structure was used to create an etalon cavity for the 2.1 micrometers pump beam. The pulsed incident pump intensity at threshold was only 8 kW/cm² at 300 K for this edge- emitting mid-IR laser. The differential power conversion efficiency was 9% at 77 K and 4% at 275 K, which indicates promising prospects for achieving high cw output powers at TE-cooler temperatures following further optimization.

Optical Pumping

10.1117/12.382087

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Citations (1)

High power, tunable, narrow linewidth 1.55-µm distributed feedback diode lasers

Conference on Lasers and Electro-Optics (1998)

J.H. Abeles R. Menna D.Z. Garbuzov Ramon U. Martinelli D. Capewell

Applications such as RF photonic systems, including RF frequency-conversion links, and other communications, metrological, and nonlinear systems stand to benefit from high-power, narrow-linewidth, tunable optical sources.

Laser linewidth

Source

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Citations (1)

Comparison of facet temperature and degradation of unpumped and passivated facets of Al-free 940-nm lasers using photoluminescence

IEEE Journal of Quantum Electronics (2005)

Ashonita Chavan Radosveta Radionova G.W. Charache R. Menna Holger Schlüter

Influences of facet degradation of Al-free InGaAsP-GaAs 940-nm laser diodes were studied at power densities well below catastrophic optical mirror damage level using photoluminescence (PL) during normal operation and after a rigorous burn-in procedure. The shift in the PL peak of the cladding layer of the device is used to calculate the temperature of the facet. Devices with different facet treatments: untreated electron beam evaporation, untreated ion beam deposition, unpumped and passivated facets were compared. The results indicate that the degradation of facet is more severe for untreated and unpumped facets as compared to passivated facets. The results were also compared with power measurements, which show that the drop in the power during the first 50 h of operation is nonexistent for passivated facet devices leading to the conclusion that photo-induced oxidation is the major cause of the degradation of the facet and thus oxide removal and surface passivation are crucial to make stable laser diodes.

Passivation

Facet (psychology)

Cladding (metalworking)

Degradation

10.1109/jqe.2005.844468

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Citations (10)