Jean-Pierre Chante

Laboratoire Ampère

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Co-Authors

Dominique Planson

Laboratoire Ampère

Christophe Raynaud

Institut National des Sciences Appliquées de Lyon

Mihai Lazar

Centre de Nanosciences et de Nanotechnologies

Marie‐Laure Locatelli

Laboratoire Plasma et Conversion d'Energie

Philippe Godignon

Institut de Microelectrònica de Barcelona

Pierre Brosselard

Université Claude Bernard Lyon 1

Dominique Tournier

Laboratoire Ampère

Sigo Scharnholz

Institut Franco-Allemand de Recherches de Saint-Louis

Laurent Ottaviani

Aix-Marseille Université

José del R. Millán

The University of Texas at Austin

Cooperative Institutions

Centre National de la Recherche Scientifique

Institut National des Sciences Appliquées de Lyon

Université Claude Bernard Lyon 1

Laboratoire Ampère

Laboratoire de Génie Électrique de Grenoble

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

École Centrale de Lyon

CEA LETI

CEA Grenoble

Institut polytechnique de Grenoble

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Experimental characterization of a 4H-SiC high voltage current limiting device

HAL (Le Centre pour la Communication Scientifique Directe) (2001)

F. Nallet Dominique Planson Philippe Godignon Marie‐Laure Locatelli Mihai Lazar

Limiting

Characterization

Current limiting

Wide-bandgap semiconductor

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Citations (0)

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Materials science forum (2005)

Pierre Brosselard Thierry Bouchet Dominique Planson Sigo Scharnholz Gontran Pâques

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Passivation

Blocking (statistics)

MOS-controlled thyristor

10.4028/www.scientific.net/msf.483-485.1005

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Damage annealing and dopant activation in Al ion implanted alpha-SiC

HAL (Le Centre pour la Communication Scientifique Directe) (1997)

B. Canut S.M.M. Ramos J.A. Roger Jean-Pierre Chante Marie‐Laure Locatelli

Dopant Activation

Alpha (finance)

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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

HAL (Le Centre pour la Communication Scientifique Directe) (2001)

M. Lazar Christophe Raynaud Dominique Planson Marie‐Laure Locatelli Karine Isoird

Source

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Citations (0)

Conception d'un transistor JFET 5 kV en SiC-4H

Pierre Brosselard Dominique Planson L. Di Cioccio T. Billon Sigo Scharnholz

JFET

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Citations (0)

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Materials science forum (2005)

Pierre Brosselard Thierry Bouchet Dominique Planson Sigo Scharnholz Gontran Pâques

de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

MOS-controlled thyristor

10.4028/0-87849-963-6.1005

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Citations (1)

SiC power semiconductor devices for new applications in power electronics

2006 12th International Power Electronics and Motion Control Conference (2008)

D. Planson Dominique Tournier Pascal Bevilacqua Nicolas Dheilly Hervé Morel

This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

Scope (computer science)

Power Electronics

Wide-bandgap semiconductor

High Voltage

Power module

10.1109/epepemc.2008.4635632

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Citations (11)

STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH

HAL (Le Centre pour la Communication Scientifique Directe) (1994)

Hervé Morel Salah H. Gamal Jean-Pierre Chante

State variable