Soo Jin Chua

National University of Singapore

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Lin Ke

Guangdong University of Technology

Eugene A. Fitzgerald

Singapore-MIT Alliance for Research and Technology

Jinghua Teng

Agency for Science, Technology and Research

Ting Mei

Northwestern Polytechnical University

Wending Zhang

Ministry of Industry and Information Technology

Kang Du

Northwestern Polytechnical University

Chew Beng Soh

Singapore Institute of Technology

Wei Liu

Northwestern Polytechnical University

Kwang Hong Lee

Nanyang Technological University

Shuang Fang Lim

North Carolina State University

Cooperative Institutions

National University of Singapore

161

Institute of Materials Research and Engineering

114

Agency for Science, Technology and Research

105

Nanyang Technological University

Chinese Academy of Sciences

Singapore-MIT Alliance for Research and Technology

Massachusetts Institute of Technology

University of Chinese Academy of Sciences

Northwestern Polytechnical University

Institute of Microelectronics

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Small-area p-type PERC Silicon Solar Cells for Tandem Applications

Maung Thway Tianyuan Liu Mei Huang Cangming Ke Xin Ren Ng

Due to the small area of thin-film top cell candidates, the fabrication of small-area p-type silicon passivated emitter and rear cells (PERC) is investigated by scaling down from 6-inch-wide solar cells fabricated using industrial tools.

Tandem

10.1364/ose.2018.ot3c.4

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Citations (1)

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2015)

Kwadwo Konadu Ansah-Antwi Chew Beng Soh Hongfei Liu Soo Jin Chua

The four nearest Si{111} multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si{111} facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

Coalescence (physics)

Torr

10.1116/1.4933201

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Citations (8)

A mechanical assessment of flexible optoelectronic devices

Thin Solid Films (2001)

Zhong Chen Brian Cotterell Wei Wang Ewald Guenther Soo Jin Chua

Brittleness

Delamination

Brittle fracture

10.1016/s0040-6090(01)01138-5

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Citations (322)

Erratum: Extended Drude Model for Intraband-Transition-Induced Optical Nonlinearity [Phys. Rev. Applied 11, 064062 (2019)]

Physical Review Applied (2020)

Heng Wang Kang Du Chuhao Jiang Zhiqiang Yang Lixia Ren

Received 28 July 2020DOI:https://doi.org/10.1103/PhysRevApplied.14.039901© 2020 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectronic transitionsNonlinear optical susceptibilityOptoelectronicsPlasmonicsUltrafast opticsPhysical SystemsThin filmsTechniquesFree-electron modelUltrafast pump-probe spectroscopyCondensed Matter & Materials PhysicsAtomic, Molecular & Optical

Drude model

10.1103/physrevapplied.14.039901

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Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

Journal of Applied Physics (2015)

Chengguo Li Hongfei Liu Soo Jin Chua

We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

Polarity (international relations)

Wide-bandgap semiconductor

10.1063/1.4916243

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Citations (11)

Suppression of Thermal Convection and Its Effect on Growth of GaN in Metal Organic Vapor Phase Epitaxy

Chemical Vapor Deposition (1998)

Gang Li Soo Jin Chua Wen Wang

Improvement of the performance of devices with group III nitrides needs advances in growth techniques. At the high temperatures required for epitaxial growth, thermal convection has to be suppressed for controlled growth of GaN. The effect of flow rate on growth rate and layer uniformity is investigated and the minimum gas velocity for suppression of thermal convection in a multiwafer, vertical reactor is determined. It is shown that, using the optimized gas velocity, high-quality GaN can be grown.

10.1002/(sici)1521-3862(199810)04:05<186::aid-cvde186>3.0.co;2-a

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Impact of self-assembled monolayer on low frequency noise of organic thin film transistors

Applied Physics Letters (2008)

Lin Ke Surani Bin Dolmanan Lu Shen Vijila Chellappan Soo Jin Chua

Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance.

Octadecyltrichlorosilane

Organic semiconductor

Electron Mobility

10.1063/1.2995856

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Citations (10)

Low frequency noise analysis on organic thin film transistors

Journal of Applied Physics (2008)

Lin Ke Surani Bin Dolmanan Lu Shen Vijila Chellappan Soo Jin Chua

Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene) with different channel lengths were fabricated under different substrate pretreatment process conditions. These OFET devices were characterized using low frequency noise (LFN) spectroscopy, and the device performance parameters were correlated with the level of LFN. It is observed that the devices with higher noise levels showed poorer device properties when compared with the devices operated at same Ids of the same channel length. It is also observed that the noise level increased with the increase in channel length for devices with the same pretreatment conditions, which is due to increased trapping and detrapping in the channel material interface domain. The OFET device operating around the threshold voltage Vth will have a 1/f noise slope that is flatter, having a gradient that is smaller in magnitude. The threshold voltage of a device can thus be observed to be at the gate voltage in which 1/f noise intensity is the highest at low frequencies.

Organic field-effect transistor

10.1063/1.3044440

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Citations (29)

Selective epitaxial growth of nanomesh InGaN MQWs on nanopore arrays of GaN substrate

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2011)

Keyan Zang Soo Jin Chua

Abstract Nanomesh InGaN/GaN multi‐quantum‐well (MQWs) were grown on nanopore arrays of GaN by metal organic vapour phase epitaxy (MOCVD). The hexagonal nanopore arrays in GaN with average diameter ∼200 nm and wall thickness ∼100 nm was fabricated by inductively couple plasma (ICP) etching using anodic alumina (AAO) template as a mask. Nanoepitaxial GaN is found to deposit on the top surface of nanoporous GaN to form a nanomesh structure, with inverted pyramid at the initial stage and followed by the nano‐pyramid structure. The existence of the inverted pyramid demonstrates the 3D strain relaxation in the GaN layer, which is confirmed by the peak shift in photoluminescence, and diffraction patterns. Better light emission is demonstrated on nanomesh InGaN MQWs, attributed to the improvement of the internal quantum efficiency by the reduction of threading dislocations and the improvement of light extraction efficiency by random scattering at the nanopores in GaN. In addition, more indium incorporation has been demonstrated compared to the control InGaN MQWs, benefiting from the strain relaxation in nanoepitaxial GaN. The nanomesh InGaN/GaN MQWs are beneficial for high efficiency LEDs and future design of emission spectrum of nitride semiconductors for solar cells applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Nanomesh

Indium gallium nitride

Nanoporous

Nanopore

Cathodoluminescence

10.1002/pssc.201001093

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Citations (1)

Strong Coupling between Dark Plasmon and Anapole Modes

The Journal of Physical Chemistry Letters (2019)

Kang Du Pei Li Kun Gao Heng Wang Zhiqiang Yang

Plasmonic nanocavities enable extreme light–matter interaction by pushing light down to the nanoscale. The dipolar feature of bright modes allows coupling with the external excitation from free space but results in a radiating background, whereas nonradiating dark plasmon modes can hardly be excited. Here, we report for the first time on strong coupling between dark plasmon and anapole modes in a hybrid metal–dielectric nanostructure. With the aid of vanishing dipole characteristics of the anapole and dark plasmons, the hybrid modes exhibit minimum far-field scattering and maximum near-field enhancement. The dark mode coupling in the metal–dielectric nanostructure offers a nonradiating air cavity with greatly improved field enhancement in a broadened band, thus providing a background-free experimental platform for spectroscopic applications. The proposed approach to dark plasmon excitation, i.e., via anapole, may boost practical exploitation of dark plasmons by allowing linearly polarized light illumination and scalable arrays of individual nanostructure units.

10.1021/acs.jpclett.9b01844

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Citations (45)