D. Knoll

Film Independent

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B. Heinemann

Leibniz Institute for Neurobiology

Bernd Tillack

Technische Universität Berlin

P. Schley

Institut für Solartechnologien (Germany)

R. Barth

Innovations for High Performance Microelectronics

H. Rücker

Innovations for High Performance Microelectronics

Stefan Lischke

Innovations for High Performance Microelectronics

Lars Zimmermann

Technische Universität Berlin

K.‐E. Ehwald

Institut für Solartechnologien (Germany)

Wolfgang Winkler

Silicon Radar (Germany)

J. Drews

Innovations for High Performance Microelectronics

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Innovations for High Performance Microelectronics

134

Institut für Solartechnologien (Germany)

Leibniz Institute for Neurobiology

Technische Universität Berlin

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

University of Southampton

Foundation for Human Potential

CEA LETI

Ruhr University Bochum

Institute of Semiconductor Physics

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Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process

H. J. Osten D. Knoll B. Heinemann H. Rücker K.‐E. Ehwald

The incorporation of low concentrations of carbon (<10/sup 20/ cm/sup -3/) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 /spl mu/m, epi-free, dual-gate CMOS platform.

Heterojunction bipolar transistor

Silicon-germanium

10.1109/apmc.2000.925943

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Bias Conditions in Gamma Radiation Assurance Tests of Bipolar Technologies for HEP Applications

IEEE Nuclear Science Symposium conference record (2006)

M. Ullán Sergio Cañas Díez F. Campabadal M. Lozano G. Pellegrini

In common irradiation tests performed with electronics to be used in space applications, devices are kept with their terminals shorted together during the irradiation time. However, in HEP experiments, devices are generally biased during the irradiation periods. Therefore, unbiased irradiation tests are not realistic anymore. We have performed systematic experiments irradiating different bipolar transistors in the same conditions but with different bias configurations. We have found that bipolar transistors suffer much more damage when irradiated under unbiased conditions (floating terminals) than when biased during the irradiation. For this reason, unbiased irradiations would largely overestimate the irradiation damage in these devices. Grounding or shorting the devices during irradiation lead to slight more damages, and can be considered worst-case configurations. No irradiation bias effects have been observed for neutron irradiations.

radiation damage

10.1109/nssmic.2006.356127

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Citations (5)

Redistribution of implanted and thermally predeposited dopants during high pressure oxidation

physica status solidi (a) (1986)

Axel Fischer D. Knoll T. Grabolla Frank Fischer

10.1002/pssa.2210970248

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BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

International Electron Devices Meeting (2010)

Mehmet Kaynak Matthias Wietstruck R. Scholz J. Drews R. Barth

We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB up to 140GHz, and isolation is better than 15dB in the frequency range of 90 to 140GHz. The switch-on time is measured as 10μs. No performance degradation was observed after 5 billion cold switching cycles demonstrating the high reliability of the switch. An on-chip charge-pump (CP) circuit is realized using enhanced PMOS transistor to excite the switch with an output voltage of up to 50V and a rise time of 2μs.

BiCMOS

Crossover switch

Analogue switch

10.1109/iedm.2010.5703488

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Citations (29)

High-Efficiency Grating Couplers for Integration into a High-Performance Photonic BiCMOS Process

Asia Communications and Photonics Conference 2021 (2013)

Stefan Lischke Benjamin Wohlfeil D. Knoll Lars Zimmermann Christian Mai

We present high-efficiency fiber-to-chip grating couplers with a coupling loss of about - 1.5dB only, whose structure and fabrication flow facilitate an easy integration in a high-performance, photonic BiCMOS process.

BiCMOS

Coupling loss

10.1364/acpc.2013.aw4a.1

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Citations (1)

Low dark current Ge PIN photodiode for a high-performance, photonic BiCMOS process for radio-over-fiber applications

IEEE Photonics Conference (2012)

Stefan Lischke D. Knoll Lars Zimmermann Y. Yamamoto Mirko Fraschke

A waveguide coupled Ge PIN photodiode showing 0.7A/W responsivity and 13GHz optical bandwidth at a low dark current of 12mA/cm ² is presented. Its unique features facilitate integration in a high-performance, photonic BiCMOS process.

Photodiode

BiCMOS

10.1109/ipcon.2012.6358778

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Citations (11)

Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects

IEEE Transactions on Nuclear Science (2009)

Sergio Cañas Díez M. Lozano G. Pellegrini F. Campabadal Iago Díez

Proton irradiation results are shown here for three different SiGe:C HBT technologies from IHP Microelectronics. High damages are observed although the transistors remain usable for their application on the Super-LHC. Considerations on the ionization and displacement effects additivity are also presented in order to validate parameterized experiments. This study shows a reasonable agreement between proton irradiations and previous gamma and neutron irradiations.

Microelectronics

Heterojunction bipolar transistor

radiation damage

Radiation hardening

10.1109/tns.2009.2018552

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Citations (39)

A two mask complementary LDMOS module integrated in a 0.25 μm SiGe:C BiCMOS platform

K.‐E. Ehwald A. Fischer F. Fuernhammer Wolfgang Winkler B. Senapati

The integration of RF n-and p-LDMOS transistors into a CMOS or BiCMOS platform allows the use of complementary circuit techniques and enables efficient solutions for linear RF power amplifiers, power switches, DC/DC converters and high voltage IO circuits. We demonstrate the modular integration of high performance n-LDMOS devices and a record p-LDMOS transistor into a low-cost 0.25 /spl mu/m SiGe:C RF-BiCMOS technology. In addition to n-LDMOS transistors on a p-substrate with breakdown voltages near 30 V, isolated n-LDMOS- and p-LDMOS transistors can be manufactured on the same wafer and achieve breakdown voltages of 11.5 V and 13.5 V and f/sub T//f/sub max/ values of 23/48 GHz or 13/30 GHz, respectively.

LDMOS

BiCMOS

10.1109/essder.2004.1356503

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Citations (16)

Design effects on the performance of high-speed Ge photo detectors

Stefan Lischke Woo‐Young Choi Lars Zimmermann D. Knoll Christian Mai

We investigate design effects on the opto-electrical frequency response of waveguide-coupled, lateral Ge p-i-n photodiodes to estimate the sensitivity of this response to diode fabrication tolerances and, in particular, to improve our understanding how diffusion of photo carriers acts on the response behavior.

Photodiode

Response time

Waveguide

Lateral diffusion

10.1109/group4.2016.7739076

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Citations (1)

Modulator integration in high-performance BiCMOS

Lars Zimmermann D. Knoll Stefan Lischke H. Richter Georg Winzer

We present results for FEOL integration of Silicon electro-optic waveguides with high-performance BiCMOS technology. The new technology allows for dense co-integration of high-speed analogue RF circuits and Silicon modulators.

BiCMOS

10.1109/group4.2013.6644438

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Citations (1)